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Dorokhin Mikhail Vladimirovich

Publications in Math-Net.Ru

  1. Термоэлектрические свойства квантовых точек InGaAs/GaAs

    Zhurnal Tekhnicheskoi Fiziki, 96:1 (2026),  149–160
  2. Control of magnetic characteristics of spin LEDs with a magnetic system “Mn delta layer – InGaAs/GaAs quantum well” due to delta doping with an acceptor impurity

    Fizika Tverdogo Tela, 67:7 (2025),  1348–1353
  3. Study of the Nernst–Ettingshausen effect in thin Co/Pt layers at room temperatures

    Fizika Tverdogo Tela, 67:6 (2025),  1133–1138
  4. Magnetically controlled spin light-emitting diode

    UFN, 195:5 (2025),  543–556
  5. Ferromagnetism in GaAs structures delta-doped with Fe

    Fizika Tverdogo Tela, 66:9 (2024),  1535–1540
  6. Magnetic anisotropy in Co/Pt films prepared by successive layers deposition of subatomic thicknesses

    Fizika Tverdogo Tela, 66:8 (2024),  1272–1277
  7. Methods of modulation of micromagnetic characteristics of multilayer thin-film systems [Co/Pt]

    Fizika Tverdogo Tela, 66:6 (2024),  901–905
  8. Modification of the functional characteristics of InGaAs/GaAs/Al$_2$O$_3$/CoPt spin light-emitting diodes

    Fizika Tverdogo Tela, 66:2 (2024),  184–189
  9. Synthesis and thermoelectric properties of higher manganese silicide

    Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  376–380
  10. Manipulating the micromagnetic structure of multiphase CoPt thin films by varying layer thicknesses

    Fizika Tverdogo Tela, 65:6 (2023),  989–995
  11. Formation of vertical graphene on surface of the gallium-arsenide structures

    Fizika Tverdogo Tela, 65:4 (2023),  669–675
  12. Effect of high temperature annealing on the physicochemical properties of systems based on FeSi$_x$

    Fizika Tverdogo Tela, 65:3 (2023),  509–512
  13. Galvanomagnetic and thermomagnetic phenomena in thin metal CoPt films

    UFN, 193:3 (2023),  331–339
  14. Formation of skyrmion states in ion-irradiated CoPt thin films

    Fizika Tverdogo Tela, 64:9 (2022),  1304–1310
  15. Circularly polarized electroluminescence of InGaAs/GaAs/CoPt spin light emitting diodes placed in a strong and weak magnetic field

    Zhurnal Tekhnicheskoi Fiziki, 92:5 (2022),  724–730
  16. Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer

    Fizika Tverdogo Tela, 63:9 (2021),  1245–1252
  17. Effect of ion irradiation on the magnetic properties of CoPt films

    Fizika Tverdogo Tela, 63:3 (2021),  324–332
  18. Steel 110G13L. Thermomagnetic and galvanomagnetic effects in its films

    J. Sib. Fed. Univ. Math. Phys., 14:2 (2021),  242–248
  19. Formation of a fine Si$_{1-x}$Ge$_{x}$ thermoelectric by electro-pulse plasma sintering

    Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  1975–1983
  20. Methods for switching radiation polarization in GaAs laser diodes

    Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1409–1414
  21. Method for forming films of the $\beta$-FeSi$_2$ phase by pulsed laser deposition in vacuum

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  773–778
  22. Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  38–41
  23. Experimental study of the thermal conductivity of single-walled carbon nanotube-based thin films

    Fizika Tverdogo Tela, 62:6 (2020),  960–964
  24. Diode heterostructures with a ferromagnetic (Ga, Mn)As layer

    Fizika Tverdogo Tela, 62:3 (2020),  373–380
  25. Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

    Nanosystems: Physics, Chemistry, Mathematics, 11:6 (2020),  680–684
  26. Time-resolved photoluminescence in heterostructures with InGaAs:Cr/GaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1139–1144
  27. Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  801–806
  28. Circularly polarized electroluminescence of spin LEDs with a ferromagnetic (In,Fe)Sb injector

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:14 (2020),  17–20
  29. Long-range magnetic interaction in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  40–43
  30. Studies of thermoelectric properties of superlattices based on manganese silicide and germanium

    Fizika Tverdogo Tela, 61:12 (2019),  2344–2348
  31. Modifying the magnetic properties of the CoPt alloy by ion irradiation

    Fizika Tverdogo Tela, 61:9 (2019),  1694–1699
  32. Micromagnetic and magneto-optical properties of ferromagnetic/heavy metal thin film structures

    Fizika Tverdogo Tela, 61:9 (2019),  1628–1633
  33. Enhanced photoluminescence of heavily doped $n$-Ge/Si(001) layers

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1293–1296
  34. In-situ doping of thermoelectric materials based on SiGe solid solutions during their synthesis by the spark plasma sintering technique

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1182–1188
  35. Studying magnetic diodes with a GaMnAs layer formed by pulsed laser deposition

    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  351–358
  36. Simulation of the parameters of a titanium-tritide-based beta-voltaic cell

    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  101–103
  37. Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019),  33–36
  38. Enhancing the circular polarization of spin light-emitting diodes by processing in selenium vapor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019),  52–55
  39. Detectors of circularly polarized radiation based on semiconductor heterostructures with a CoPt Schottky barrier

    Fizika Tverdogo Tela, 60:11 (2018),  2236–2239
  40. Formation of a domain structure in multilayer CoPt films by magnetic probe of an atomic force microscope

    Fizika Tverdogo Tela, 60:11 (2018),  2158–2165
  41. Raising the operating temperature of (Ga,Mn)As/GaAs spin light emitting diodes by applying post-growth treatment

    Fizika Tverdogo Tela, 60:11 (2018),  2141–2146
  42. Investigation of the initial stages of spark-plasma sintering of Si-Ge based thermoelectric materials

    Nanosystems: Physics, Chemistry, Mathematics, 9:5 (2018),  622–630
  43. Production of Si- and Ge-based thermoelectric materials by spark plasma sintering

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1455–1459
  44. Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions

    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  873–880
  45. Photoconductive detector of circularly polarized radiation based on a MIS structure with a CoPt layer

    Fizika Tverdogo Tela, 59:11 (2017),  2203–2205
  46. Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer

    Fizika Tverdogo Tela, 59:11 (2017),  2196–2199
  47. Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/$\delta$ $\langle$Mn$\rangle$ heterostructures

    Fizika Tverdogo Tela, 59:11 (2017),  2142–2147
  48. Methods for spin injection managing in InGaAs/GaAs/Al$_{2}$O$_{3}$/CoPt spin light-emitting diodes

    Fizika Tverdogo Tela, 59:11 (2017),  2135–2141
  49. Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence

    Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017),  1539–1544
  50. Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties

    Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017),  1389–1394
  51. Features of the selective manganese doping of GaAs structures

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1468–1472
  52. Thermoelectric effects in nanoscale layers of manganese silicide

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1456–1461
  53. Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/$n^{+}$-GaAs/(Ga,Mn)As

    Fizika Tverdogo Tela, 58:11 (2016),  2190–2194
  54. Properties of CoPt ferromagnetic layers for application in spin light-emitting diodes

    Fizika Tverdogo Tela, 58:11 (2016),  2186–2189
  55. On the crystal structure and thermoelectric properties of thin MnSi$_{x}$ films

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1473–1478
  56. Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1463–1468
  57. Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn $\delta$ layer

    Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  3–8
  58. CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1649–1653
  59. Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1497–1500
  60. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1478–1483
  61. Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  112–116
  62. Epitaxial growth of MnGa/GaAs layers for diodes with spin injection

    Fizika Tverdogo Tela, 56:10 (2014),  2062–2065
  63. Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction

    Zhurnal Tekhnicheskoi Fiziki, 84:12 (2014),  102–106
  64. Chemical and phase composition of GaMnAs/GaAs/InGaAs spin light-emitting diodes

    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  839–844
  65. The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:20 (2014),  96–103
  66. GaMnSb/InGaAs/GaAs heterostructure leds with a ferromagnetic injector layer

    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1554–1560
  67. A magnetically controlled LED with $S$-shaped current-voltage characteristic

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:22 (2012),  87–94
  68. Spin-polarized light-emitting diodes based on heterostructures with a GaAs/InGaAs/GaAs quantum well and ferromagnetic GaMnSb injection layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:16 (2012),  69–77
  69. LEDs based on InGaAs/GaAs heterostructures with magnetically controlled electroluminescence

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:24 (2011),  57–65
  70. Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors

    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1447–1450
  71. Temperature stability of photoluminescence in heterostructures with InGaAs/GaAs quantum well and Mn-delta-doped acceptor layer in GaAs barrier

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:17 (2010),  87–95
  72. Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well

    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:10 (2009),  730–735

© Steklov Math. Inst. of RAS, 2026