Abrosimov Nikolai Valentinovich

Publications in Math-Net.Ru

1. Thermal conductivity of single-crystals isotopically enriched $^{70}$Ge, $^{72}$Ge, $^{74}$Ge in the temperature range of 80–310 K
   
   Fizika Tverdogo Tela, 65:8 (2023),  1448–1452
2. Double magnesium donors as a potential active medium in the terahertz range
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  455–460
3. Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiation
   
   Fizika Tverdogo Tela, 64:12 (2022),  1915
4. Detection of Ramsey oscillations in germanium doped with shallow donors upon the excitation of the $1s\to2p_0$ transition
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 116:3 (2022),  139–145
5. Solubility of magnesium in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  858–861
6. Thermal activation of valley-orbit states of neutral magnesium in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  500
7. Optical cross sections and oscillation strengths of magnesium double donor in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  299–303
8. Relaxation of the excited states of arsenic in strained germanium
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1145–1149
9. Behavior of lithium donors in bulk single-crystal isotopically pure $^{28}$Si$_{1-x}$ $^{72}$Ge$_{x}$ alloys
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1134–1138
10. Behavior of phosphorus donors in bulk single-crystal monoisotopic $^{28}$Si$_{1-x}$ $^{72}$Ge$_{x}$ alloys
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  933–937
11. Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  816–821
12. Investigation of the magnesium impurity in silicon
    
    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  321–326
13. Vacancy-phosphorus complexes in electron-irradiated floating-zone $n$-type silicon: new points in annealing studies
    
    Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  45
14. Relaxation times and population inversion of excited states of arsenic donors in germanium
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 110:10 (2019),  677–682
15. Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1285–1288
16. Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1263–1266
17. DLTS investigation of the energy spectrum of Si : Mg crystals
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  799–804
18. Decomposition of a solid solution of interstitial magnesium in silicon
    
    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  314–316
19. Interaction rates of group-III and group-V impurities with intrinsic point defects in irradiated Si and Ge
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1578
20. Low-temperature intracenter relaxation times of shallow donors in germanium
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 106:9 (2017),  555–560
21. Polarization of the induced THz emission of donors in silicon
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1701–1705
22. Some challenging points in the identification of defects in floating-zone $n$-type silicon irradiated with 8 and 15 Mev protons
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1313–1319
23. Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies
    
    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1143–1145
24. Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  350–353
25. Terahertz emission at impurity electrical breakdown in Si(Li)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  18–23
26. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  15–20
27. Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon
    
    Kvantovaya Elektronika, 45:2 (2015),  113–120
28. Terahertz intracenter photoluminescence of silicon with lithium at interband excitation
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  876–880
29. Electrical properties of diluted $n$- and $p$-Si$_{1-x}$Ge$_x$ at small $x$
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1592–1596
30. Vacancy-donor pairs and their formation in irradiated $n$-Si
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1473–1478
31. Shallow-donor lasers in uniaxially stressed silicon
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  199–205
32. Monoisotopic silicon $^{28}$Si in spin resonance spectroscopy of electrons localized at donors
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  168–173
33. Investigation of the structure of the ground state of lithium donor centers in silicon enriched in $^{28}$Si isotope and the influence of internal strain in the crystal on this structure
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1468–1474
34. Oxygen in Ge : Sn
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1297–1301
35. Dependence of the energy of the resonance states of an acceptor in silicon on the host isotopic mass
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:6 (2009),  501–504