Ezhevskii Alexandr Aleksandrovich

Publications in Math-Net.Ru

1. Generation of spin currents in $n$-silicon doped with phosphorus, antimony and bismuth and the influence of spin scattering processes with flip on them
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  654–658
2. Behavior of lithium donors in bulk single-crystal isotopically pure $^{28}$Si$_{1-x}$ $^{72}$Ge$_{x}$ alloys
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1134–1138
3. Behavior of phosphorus donors in bulk single-crystal monoisotopic $^{28}$Si$_{1-x}$ $^{72}$Ge$_{x}$ alloys
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  933–937
4. Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties
   
   Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  350–353
5. Monoisotopic silicon $^{28}$Si in spin resonance spectroscopy of electrons localized at donors
   
   Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  168–173
6. Temperature renormalization of the conduction electron $g$-factor in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1604–1608
7. Investigation of the structure of the ground state of lithium donor centers in silicon enriched in $^{28}$Si isotope and the influence of internal strain in the crystal on this structure
   
   Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1468–1474
8. On the nature of electroluminescence at 1.5 $\mu$m in the breakdown mode of reverse-biased Er-doped silicon $p$–$n$-junction structures grown by sublimation molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  87–92
9. Dependence of the energy of the resonance states of an acceptor in silicon on the host isotopic mass
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 90:6 (2009),  501–504