Novikov Yurii Nikolaevich

Publications in Math-Net.Ru

1. Nature of defects responsible for the red shift of the fundamental absorption edge and the increase in the refractive index of irradiated Si$_3$N$_4$
   
   Fizika Tverdogo Tela, 67:11 (2025),  2117–2122
2. Abnormally narrow spectrum of localized states in amorphous silicon nitride
   
   Fizika Tverdogo Tela, 66:10 (2024),  1721–1724
3. Multiphonon ionization of deep centers in amorphous boron nitride
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 114:7 (2021),  498–501
4. Nanoscale potential fluctuations in SiO$_{x}$ synthesized by the plasma enhanced chemical vapor deposition
   
   Fizika Tverdogo Tela, 61:12 (2019),  2528–2535
5. Short-range order and charge transport in SiO$_{x}$: experiment and numerical simulation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018),  81–88
6. Relaxation of the electric current in Si$_{3}$N$_{4}$: Experiment and numerical simulation
   
   Fizika Tverdogo Tela, 59:1 (2017),  49–53
7. Hole-stimulated transfer of traps in dielectrics
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 105:10 (2017),  605–609
8. Two-band conduction of Si$_3$N$_4$
   
   Fizika Tverdogo Tela, 56:6 (2014),  1046–1051
9. Multiphoton mechanism of ionization of deep centers in HfO$_2$
   
   Fizika Tverdogo Tela, 55:5 (2013),  888–891
10. Large-scale potential fluctuations caused by SiO$_x$ compositional inhomogeneity
    
    Fizika Tverdogo Tela, 54:3 (2012),  465–470
11. Multiphonon mechanism of the ionization of traps in Al$_2$O$_3$Experiment and numerical simulation
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:10 (2009),  599–602
12. Multiphonon ionization of deep centers in amorphous silicon nitride: Experiment and numerical simulations
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003),  455–458