Fedosenko Evgeniy Vladimirovich

Publications in Math-Net.Ru

1. Photosensitivity of a metal-insulator-semiconductor field-effect transistor based on PbSnTe:In film with a composition close to the bands inversion
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023),  22–25
2. Topology of PbSnTe:In layers versus indium concentration
   
   Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  1040–1044
3. Substitution of phosphorus at the InP(001) surface upon annealing in an arsenic flux
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  877–881
4. Preparation atomically clean and structurally ordered surfaces of epitaxial CdTe films for subsequent epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  748–753
5. Sign-alternating photoconductivity in PbSnTe : In films in the space-charge-limited current regime
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  796–800
6. Modification of the surface properties of PbSnTe$\langle$In$\rangle$ epitaxial layers with composition near band inversion
   
   Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019),  1795–1799
7. Formation of a graphene-like SiN layer on the surface Si(111)
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1407–1413
8. Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1574–1578
9. Raman scattering in PbTe and PbSnTe films: In situ phase transformations
   
   Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  185–189
10. Formation of the GaAs-Ge heterointerface in the presence of oxide
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009),  94–97