Marin Denis Victorovich

Publications in Math-Net.Ru

1. Influence of radiative heat transfer on growth temperature during epitaxy of HgCdTe layers
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  153–159
2. Temperature dependence of the spectra of optical constants of CdTe in the region of the absorption edge
   
   Optics and Spectroscopy, 131:9 (2023),  1213–1218
3. In situ ellipsometric control of growth processes of ZnTe and CdTe buffer layers in technology of molecular beam epitaxy of mercury cadmium telluride
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  469–475
4. Investigation of metal–insulator–semiconductor structure based on CdHgTe and HfO$_2$
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:19 (2022),  16–19
5. Investigation of the temperature dependence of the spectra of optical constants of Hg$_{1-x}$Cd$_{x}$Te films grown using molecular beam epitaxy
   
   Optics and Spectroscopy, 129:1 (2021),  33–40
6. In situ ellipsometric monitoring of composition and temperature of HgCdTe layers during their growth
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1240–1247
7. The effect of As$^+$ ion implantation and annealing on the electrical properties of near-surface layers in graded-gap $n$-Hg$_{0.78}$Cd$_{0.22}$Te films
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:4 (2021),  33–35
8. Parametric model of the optical constant spectra of Hg$_{1-x}$Cd$_{x}$Te and determination of the compound composition
   
   Optics and Spectroscopy, 128:12 (2020),  1815–1820
9. The effect of the growth temperature on the passivating properties of the Al$_{2}$O$_{3}$ films formed by atomic layer deposition on the CdHgTe surface
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  14–17
10. Ellipsometric method for measuring the CdTe buffer-layer temperature in the molecular-beam epitaxy of CdHgTe
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  137–142
11. Electrophysical properties of Cd$_{x}$Hg$_{1-x}$Te ($x$ = 0.3) films grown by molecular beam epitaxy on Si(013) substrates
    
    Fizika Tverdogo Tela, 58:4 (2016),  625–629
12. CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1652–1656
13. Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  208–211
14. CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  788–792
15. Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted $p^+$–$n$ photodiode structure formation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:16 (2014),  65–72
16. Influence of irradiation with swift heavy ions on multilayer Si/SiO$_2$ heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  334–339
17. Anomalous temperature dependence of photoluminescence in GeO$_{x}$
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 95:8 (2012),  472–476
18. Formation of light-emitting nanostructures in layers of stoichiometric SiO$_2$ irradiated with swift heavy ions
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1363–1368
19. The effect of composition on the formation of light-emitting Si nanostructures in SiO$_x$ layers on irradiation with swift heavy ions
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  419–424
20. Light-emitting Si nanostructures formed in SiO$_2$ on irradiation with swift heavy ions
    
    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  544–549
21. Modification of germanium nanoclusters in GeO$_x$ films during isochronous furnace and pulse laser annealing
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  102–110
22. Quasi-direct optical transitions in Ge nanocrystals embedded in GeO$_2$ matrix
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009),  84–88
23. Visible photoluminescence from silicon nanopowders produced by silicon evaporation in a high-power electron beam
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 80:8 (2004),  619–622
24. Photoluminescence of GeO$_2$ films containing germanium nanocrystals
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:8 (2003),  485–488