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Drozdov Yu N

Publications in Math-Net.Ru

  1. Features of the vapor-phase epitaxy of GaAs on nonplanar substrates

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  958–961
  2. Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  855–858
  3. The use of pulsed laser annealing to form ohmic Mo/Ti contacts to diamond

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  34–38
  4. SIMS analysis of carbon-containing materials: content of carbon atoms in $sp^{2}$ and $sp^{3}$ hybridization states

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  38–42
  5. Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers

    Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1923–1932
  6. A new approach to tof-sims analysis of the phase composition of carbon-containing materials

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:2 (2019),  50–54
  7. Verification of the hypothesis on the thermoelastic nature of deformation of $a$(0001)GaN layer grown on the sapphire $a$-cut

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1380–1383
  8. Study of the structural and morphological properties of HPHT diamond substrates

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1321–1325
  9. Investigation of the anisotropy of the structural properties of GaN(0001) layers grown by MOVPE on $a$-plane (11$\bar2$0) sapphire

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1300–1303
  10. A new limitation of the depth resolution in tof-sims elemental profiling: the influence of a probing ion beam

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:8 (2018),  11–19
  11. New cluster secondary ions for quantitative analysis of the concentration of boron atoms in diamond by time-of-flight secondary-ion mass spectrometry

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:7 (2018),  52–60
  12. Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:10 (2017),  50–59
  13. Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1647–1651
  14. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1459–1462
  15. Extremely deep profiling analysis of the atomic composition of thick ($>$ 100 $\mu$m) GaAs layers within power PIN diodes by secondary ion mass spectrometry

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:15 (2016),  27–35
  16. Nonlinear calibration curves in secondary ion mass spectrometry for quantitative analysis of gesi heterostructures with nanoclusters

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:5 (2016),  40–48
  17. Peculiarities in magnetron sputtering of YBCO epitaxial films for applications in superconductor electronics devices

    Zhurnal Tekhnicheskoi Fiziki, 85:11 (2015),  109–116
  18. Si$_3$N$_4$ layers for the in-situ passivation of GaN-based HEMT structures

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1469–1472
  19. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  21–24
  20. Single-crystal GaN/AlN layers on CVD diamond

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  73–80
  21. High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  17–25
  22. Growth and formation of the microstructure of YBCO films deposited by magnetron sputtering on fianite substrates

    Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014),  68–72
  23. Use of related parameters in X-ray diffraction analysis of multilayer structures with allowance for the layer growth time

    Zhurnal Tekhnicheskoi Fiziki, 84:3 (2014),  94–98
  24. Quantitative calibration and germanium SIMS depth profiling in Ge$_x$Si$_{1-x}$/Si heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1138–1146
  25. Si$_{1-x}$Ge$_x$/Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  417–420
  26. A new approach to the diagnostics of nanoislands in Ge$_x$Si$_{1-x}$/Si heterostructures by secondary ion mass spectrometry

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:14 (2014),  36–46
  27. Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry

    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1580–1585
  28. Depth profiling of fullerene-containing structures by time-of-flight secondary ion mass spectrometry

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:24 (2013),  45–54
  29. Changes in the elemental composition and microstructure of an YBa$_2$Cu$_3$O$_{7-\delta}$ target during magnetron sputtering

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:19 (2013),  41–50
  30. Heterostructures with GaAs/AlGaAs superlattices grown by MOCVD: growth features, optical and transport characteristics

    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1593–1596
  31. Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity

    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1527–1531
  32. Method for taking into account the shift parameter in the deconvolution of the depth composition distribution of semiconductor structures from SIMS depth profiles

    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1515–1520
  33. Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots

    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1444–1447
  34. Analysis of the composition of (Al,Ga)As alloys by secondary ion mass spectroscopy and X-ray diffractometry

    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1419–1423
  35. Prototypes of photovoltaic cells based on subphthalocyanine with a lower buffer layer

    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1408–1413
  36. Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al$_2$O$_3$ and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:24 (2012),  86–94
  37. A new alternative to secondary CsM$^+$ ions for depth profiling of multilayer metal structures by secondary ion mass spectrometry

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:24 (2012),  75–85
  38. Electrical and structural parameters of YBCO films obtained by repeated growth cycles

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:14 (2011),  54–59
  39. Special features of the excitation spectra and kinetics of photoluminescence of the Si$_{1-x}$Ge$_x$:Er/Si structures with relaxed heterolayers

    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1527–1532
  40. Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers

    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  538–543
  41. Secondary cluster ions Ge$_2^-$ and Ge$_3^-$ for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures

    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  418–421
  42. Deposition of YBCO films on both sides of substrate by magnetron sputtering

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:18 (2010),  60–66
  43. Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride

    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009),  80–83
  44. Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands

    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002),  425–429
  45. Energy diagrams and electrical characteristics of stressed-layer $\mathrm{Ge}$–$\mathrm{Ge}_{1-x}\mathrm{Si}_{x}$ superlattices

    Fizika Tverdogo Tela, 32:7 (1990),  1933–1940
  46. Spectra of Light Electroreflection from the Surface of Ge$-$Ge$_{1-x}$Si$_{x}$ Superlattices

    Fizika i Tekhnika Poluprovodnikov, 21:11 (1987),  1962–1967
  47. Spectra of Light Electroreflection from Ge$_{1-x_{1}}$Si$_{x_{1}}{-}$Ge$_{1-x_{2}}$Si$_{x_{2}}$ Periodic Structures with Hyperfine Layers

    Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  118–122
  48. An algebraic method of superposition function construction

    Dokl. Akad. Nauk SSSR, 251:2 (1980),  350–352
  49. On the determination of coefficients of the characteristic equation in the problem of decomposition of a noise-distorted function into a sum of exponents

    Dokl. Akad. Nauk SSSR, 248:6 (1979),  1341–1343
  50. Crystal structure of triphenyl (triphenylgermylperoxy) silane, $(\mathrm{C}_6\mathrm{H}_5)_3\mathrm{GeOOSi}(\mathrm{C}_6\mathrm{H}_5)_3$

    Dokl. Akad. Nauk SSSR, 246:3 (1979),  601–605
  51. A new method of the construction of crystal vector systems without the Fourier series calculation

    Dokl. Akad. Nauk SSSR, 242:2 (1978),  344–346
  52. On crystal structure of ammonium monoaquapentafluorogallate, $(\mathrm{NH}_4)_2\mathrm{GaF}_5\cdot\mathrm{H}_2\mathrm{O}$

    Dokl. Akad. Nauk SSSR, 241:2 (1978),  357–359
  53. On the solution to Patterson integral equation (for an ideal case of nonperiodic electron density)

    Dokl. Akad. Nauk SSSR, 225:1 (1975),  91–93
  54. Analytic representation of the algorithm of search for the linear chain of peaks and interaction parallelograms in Patterson function

    Dokl. Akad. Nauk SSSR, 220:6 (1975),  1312–1315
  55. A new (analytic) representation of the process of Patterson function deciphering according to separation functions

    Dokl. Akad. Nauk SSSR, 220:3 (1975),  588–591
  56. Deciphering of crystalline structure of $\mathrm{Na}_{11}\mathrm{Nb}_2\mathrm{Ti}[\mathrm{Si}_2\mathrm{O}_7]_2 [\mathrm{PO}_4]_2\mathrm{O}_3\mathrm{F}$ by the method of vector subsystems

    Dokl. Akad. Nauk SSSR, 217:3 (1974),  569–572
  57. Crystalline structure of $\mathrm{Na}_{11}\mathrm{Nb}_2\mathrm{TiSi}_4\mathrm{P}_2\mathrm{O}_{25}\mathrm{F}$

    Dokl. Akad. Nauk SSSR, 216:1 (1974),  78–81
  58. Crystalline structure of silver vanadate, $\mathrm{Ag}_{2-x}\mathrm{V}_4\mathrm{O}_{10}$ ($x=0,57$)

    Dokl. Akad. Nauk SSSR, 210:2 (1973),  339–341
  59. Analysis of Patterson's function. Vector subsystems responding to several multiple peaks (sets of isolated segments)

    Dokl. Akad. Nauk SSSR, 209:2 (1973),  344–347
  60. Crystalline structure of fenaksite $\mathrm{FeNaK}[\mathrm{Si}_4\mathrm{O}_{10}]$ ($\mathrm{KNaFe}[\mathrm{Si}_4\mathrm{O}_{10}]$)

    Dokl. Akad. Nauk SSSR, 194:4 (1970),  818–820

© Steklov Math. Inst. of RAS, 2026