Andreev Boris Aleksandrovich

Publications in Math-Net.Ru

1. Ultrafast luminescence kinetics and localization effects of nonequilibrium carriers in degenerate $n$-InGaN layers
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:8 (2025),  688–695
2. Photoinduced band-gap renormalization in degenerate narrow-gap $n$-InGaN epitaxial films
   
   Fizika i Tekhnika Poluprovodnikov, 59:9 (2025),  563–570
3. Formation of planar structures with InGaN layers for red wavelength light sources
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  406–413
4. Influence of the ratio of group III and V fluxes on the structural, emissive properties properties and stimulated emission of planar structures with InGaN layers in the IR range
   
   Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  220–225
5. Features of formation of In$_x$Ga$_{1-x}$N bulk layers in the immiscibility gap of solid solutions ($x$ $\sim$ 0.6) by molecular beam epitaxy with plasma nitrogen activation
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  444–450
6. Formation of heterostructures with multiple quantum wells InN/InGaN by the PA-MBE method on sapphire
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  848–854
7. PA MBE growth of intermediate-composition InGaN layers for red and near-IR laser sources
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  700–704
8. Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  766–772
9. Radiative properties of up-conversion coatings formed on the basis of erbium-doped barium titanate xerogels
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  713–718
10. Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  129–137
11. Emission properties of heavily doped epitaxial indium-nitride layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1395–1400
12. Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1354–1359
13. Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1594–1598
14. Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  264–268
15. Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  913–918
16. Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1344–1346
17. Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1435–1439
18. Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1398–1401
19. Electroluminescence at a wavelength of 1.54 $\mu$m in Si:Er/Si structures consisting of a number of $p$–$n$ junctions
    
    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1486–1488
20. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  132–135
21. Electroluminescence at a wavelength of 1.5 $\mu$m in Si:Er/Si diode structures doped with Al, Ga, and B acceptors
    
    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1645–1648
22. Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1519–1522
23. GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 $\mu$m
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  422–429
24. Dependence of the energy of the resonance states of an acceptor in silicon on the host isotopic mass
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:6 (2009),  501–504
25. Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009),  80–83
26. Oscillator strengths of optical transitions in shallow impurities and impurity complexes in silicon and germanium
    
    Fizika i Tekhnika Poluprovodnikov, 26:5 (1992),  927–934