Marenkin Sergey Fedorovich

Publications in Math-Net.Ru

1. High-pressures relaxation effects in $n$-CdAs$_2$
   
   Fizika Tverdogo Tela, 67:11 (2025),  2060–2064
2. Kinetic characteristics of the heterogeneous alloy Cd$_3$As$_2$(MnAs)$_{0.03}$ at high pressure
   
   Fizika Tverdogo Tela, 66:5 (2024),  699–702
3. Magnetotransport properties of a"'- (Cd$_{0.5}$Zn$_{0.5}$)$_3$As$_2$ single crystals subjected to hydrostatic pressure
   
   Fizika Tverdogo Tela, 66:1 (2024),  40–44
4. Electrical resistance and magnetoresistance of Cd$_{3}$As$_{2}$–30 mol.% MnAs under high pressure
   
   Fizika Tverdogo Tela, 63:8 (2021),  1146–1150
5. Spin-polarized electric current in Cd$_{48.6}$Mn$_{11.4}$As$_{40}$ nanocomposite
   
   Fizika Tverdogo Tela, 63:4 (2021),  427–432
6. Magnetic properties of Dirac 3D semimetal Cd$_{3}$As$_{2}$ with MnAs nanogranules at high pressure
   
   Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021),  1674–1677
7. Magnetic anisotropy of needlelike single-crystal MnSb inclusions in an InSb matrix
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:10 (2021),  46–49
8. Electric and galvanomagnetic properties of Cd$_{3}$As$_{2}$–20 mol % MnAs composite under high pressure
   
   Fizika Tverdogo Tela, 62:6 (2020),  834–838
9. Superconductivity in thin films of the Dirac semimetal Cd$_{3}$As$_{2}$
   
   Fizika Tverdogo Tela, 62:3 (2020),  369–372
10. The synthesis and investigation of the electrical properties of tricadmium diarsenide with MnAs nanogranules
    
    Zhurnal Tekhnicheskoi Fiziki, 90:7 (2020),  1128–1131
11. Quantum corrections and magnetotransport in 3D Dirac semimetal Cd$_{3-x}$Mn$_{x}$As$_{2}$ films
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1479–1484
12. Phase diagram of ZnAs₂–MnAs system
    
    Mendeleev Commun., 28:2 (2018),  219–221
13. Pressure-induced metamagnetic transition in the Cd_0.7Mn_0.3GeAs₂ ferromagnetic semiconductor
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 91:9 (2010),  524–526
14. Metamagnetism near $T_C$ in Mn-substituted chalcopyrite Cd$_{0.90}$Mn$_{0.10}$GeAs$_2$
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:7 (2009),  391–395