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Zhuravlev Konstantin Sergeevich

Publications in Math-Net.Ru

  1. Anomalous effect of the InGaAs top layer on the optical properties of a quantum-dimensional waveguide structure for electro-optical modulators based on indium phosphide

    Kvantovaya Elektronika, 55:1 (2025),  30–35
  2. Parameters of stimulated emission in Al$_{0.65}$Ga$_{0.35}$N : Si/AlN/Al$_2$O$_3$ structure with planar geometry

    Optics and Spectroscopy, 132:9 (2024),  911–917
  3. Chemical kinetics of the Si(111) surface nitridation process at temperatures below the structural phase transition (7$\times$7)$\to$(1$\times$1)

    Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  349–357
  4. The electrochemical profiling of $n^+/n$ GaAs structures for field-effect transistors

    Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  53–61
  5. Optical gain in heavily doped Al$_{0.65}$Ga$_{0.35}$N:Si structures under continuous pumping

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:21 (2024),  39–42
  6. InAs/GaSb superlattices for infrared photodetectors

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:20 (2024),  33–36
  7. Mechanisms of optical gain in heavily doped Al$_x$Ga$_{1-x}$N : Si structures ($x$ = 0.56–1)

    Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  731–737
  8. Oxide desorption process from InSb surface under Sb flux

    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  138–144
  9. Electrons drift velocity overshot in heterostructures with double-sided donor-acceptor doping and digital barriers

    Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  21–28
  10. InSb/GaAs heterostructures for magnetic field sensors

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  27–30
  11. InP-based electro-optic and electro-absorption modulators for the 1.5-μm spectral range

    Kvantovaya Elektronika, 53:11 (2023),  821–832
  12. Stimulated emission in the heavily doped Al$_{0.68}$Ga$_{0.32}$N : Si structures with transverse optical pumping at room temperature

    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1125–1131
  13. Determination of the types of optical transitions and concentrations of donors and acceptors in GaN by the dependence of photoluminescence intensity on the excitation power

    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  802–807
  14. Determination of the AlN nucleation layer thickness formed on the Al$_2$O$_3$ (0001) surface during nitridation process by XPS and IR spectroscopy

    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  734–741
  15. Transformation of N-polar inversion domains from AlN buffer layers during the growth of AlGaN layers

    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  677–684
  16. GaN quantum dots formation by temperature increase in ammonia flow

    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  667–671
  17. Determination of the flow and activation energy of phosphorus desorption during annealing of an InP(001) substrate in an arsenic flux under molecular beam epitaxy conditions

    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  646–650
  18. AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:17 (2022),  20–23
  19. InGaAlAs/InAlAs heterostructures for electro-absorption modulator

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:13 (2022),  37–41
  20. The electrons drift velocity overshot in inverted transistor heterostructures with donor-acceptor doping and additional digital potential barriers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:12 (2022),  11–14
  21. GaAs/AlGaAs- and InGaAs/AlGaAs heterostructures for high-power semiconductor infrared emitters

    Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021),  1727–1731
  22. High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures

    Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021),  1158–1163
  23. Substitution of phosphorus at the InP(001) surface upon annealing in an arsenic flux

    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  877–881
  24. Features of optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N:Si-structures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  39–42
  25. A millimeter-wave field-effect transistor based on a pseudomorphic heterostructure with an additional potential barrier

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  52–54
  26. AlSb/InAs heterostructures for microwave transistors

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021),  37–39
  27. AlInSb/InSb heterostructures for IR photodetectors grown by molecular-beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020),  3–6
  28. Forming the GaN nanocrystals on the graphene-like $g$-AlN and $g$-Si$_{3}$N$_{3}$ surface

    Fizika Tverdogo Tela, 61:12 (2019),  2327–2332
  29. Surface polaritons in silicon-doped aluminum and gallium nitride films

    Optics and Spectroscopy, 127:1 (2019),  42–45
  30. On the processes of the self-assembly of cds nanocrystal arrays formed by the Langmuir–Blodgett technique

    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1573–1578
  31. Optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N : Si structures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:18 (2019),  48–51
  32. Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  21–24
  33. High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  52–54
  34. The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  59–62
  35. Formation of a graphene-like SiN layer on the surface Si(111)

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1407–1413
  36. Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers

    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  643–650
  37. Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  233–237
  38. Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  48–56
  39. Increasing saturated electron-drift velocity in donor–acceptor doped phemt heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018),  77–84
  40. Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping

    Kvantovaya Elektronika, 48:3 (2018),  215–221
  41. Nature of luminescence of PbS quantum dots synthesized in a Langmuir–Blodgett matrix

    Pis'ma v Zh. Èksper. Teoret. Fiz., 106:1 (2017),  21–25
  42. MBE-grown InSb photodetector arrays

    Zhurnal Tekhnicheskoi Fiziki, 87:6 (2017),  900–904
  43. Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1696
  44. Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method

    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  605–610
  45. AlN/GaN heterostructures for normally-off transistors

    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  395–402
  46. Features of current flow in structures based on Au/Ti/$n$-InAlAs Schottky barriers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017),  83–89
  47. Radiation enhancement in doped AlGaN-structures upon optical pumping

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  5–13
  48. Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects

    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1059–1063
  49. Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  191–194
  50. Studying average electron drift velocity in pHEMT structures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:16 (2016),  41–47
  51. Normally off transistors based on in situ passivated AlN/GaN heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016),  72–79
  52. Origin of the blue luminescence band in zirconium oxide

    Fizika Tverdogo Tela, 57:7 (2015),  1320–1324
  53. MBE-grown AlGaN/GaN heterostructures for UV photodetectors

    Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015),  67–73
  54. Increase in the diffusion length of minority carriers in Al$_x$Ga$_{1-x}$N ($x$ = 0–0.1) fabricated by ammonia molecular beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1329–1334
  55. Nitridation of an unreconstructed and reconstructed $(\sqrt{31}\times\sqrt{31})R\pm9^\circ$ (0001) sapphire surface in an ammonia flow

    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  925–931
  56. Photoluminescence kinetics in CdS nanoclusters formed by the Langmuir–Blodgett technique

    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  392–398
  57. Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  230–235
  58. Adjusting the position of the optimum operating point of a power heterostructure field-effect transistor by forming a gate potential barrier based on a donor-acceptor structure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:3 (2015),  81–87
  59. Chromium mask for plasma-chemical etching of Al$_x$Ga$_{1-x}$N layers

    Zhurnal Tekhnicheskoi Fiziki, 84:9 (2014),  96–99
  60. Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir–Blodgett method

    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1237–1242
  61. Decrease in the binding energy of donors in heavily doped GaN:Si layers

    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1164–1168
  62. Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  684–692
  63. Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  36–47
  64. Electronic excitation energy transfer between CdS quantum dots and carbon nanotubes

    Pis'ma v Zh. Èksper. Teoret. Fiz., 95:7 (2012),  403–407
  65. Decreasing the role of transverse spatial electron transport and increasing the output power of heterostructure field-effect transistors

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012),  84–89
  66. Quantization of the electronic spectrum and localization of electrons and holes in silicon quantum dots

    Fizika Tverdogo Tela, 53:4 (2011),  803–806
  67. The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier

    Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1652–1661
  68. Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  183–191
  69. Linearly polarized photoluminescence from an ensemble of wurtzite GaN/AlN quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 91:9 (2010),  498–500
  70. Recombination of charge carriers in the GaAs-based $p$–$i$–$n$ diode

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1407–1410
  71. The form of the profile of heterointerfaces in (311)Ga GaAs/AlAs structures

    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  358–366
  72. Photoluminescence kinetics of wurtzite GaN quantum dots in an AlN matrix

    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:2 (2005),  70–73
  73. Observation of exchange interaction effects under optical orientation of excitons in AlGaAs

    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:10 (2003),  664–667
  74. Millisecond photoluminescence kinetics in a system of direct-bandgap InAs quantum dots in an AlAs matrix

    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003),  459–463

© Steklov Math. Inst. of RAS, 2026