Aleksandrov Ivan Anatol'evich

Publications in Math-Net.Ru

1. Determination of the types of optical transitions and concentrations of donors and acceptors in GaN by the dependence of photoluminescence intensity on the excitation power
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  802–807
2. Forming the GaN nanocrystals on the graphene-like $g$-AlN and $g$-Si$_{3}$N$_{3}$ surface
   
   Fizika Tverdogo Tela, 61:12 (2019),  2327–2332
3. Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  21–24
4. Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects
   
   Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1059–1063
5. Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures
   
   Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  191–194
6. Linearly polarized photoluminescence from an ensemble of wurtzite GaN/AlN quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 91:9 (2010),  498–500