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Kudrin Aleksey Vladimirovich

Publications in Math-Net.Ru

  1. Influence of emitter region doping level on the turn-on dynamics of low-voltage GaAs dynistors

    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  48–52
  2. Magnetically controlled spin light-emitting diode

    UFN, 195:5 (2025),  543–556
  3. Formation of ferromagnetic semiconductor GaMnAs by ion implantation: comparison of different types of annealing

    Fizika Tverdogo Tela, 66:10 (2024),  1686–1698
  4. Ferromagnetism in GaAs structures delta-doped with Fe

    Fizika Tverdogo Tela, 66:9 (2024),  1535–1540
  5. Methods of modulation of micromagnetic characteristics of multilayer thin-film systems [Co/Pt]

    Fizika Tverdogo Tela, 66:6 (2024),  901–905
  6. Modification of the functional characteristics of InGaAs/GaAs/Al$_2$O$_3$/CoPt spin light-emitting diodes

    Fizika Tverdogo Tela, 66:2 (2024),  184–189
  7. Influence of strip mesastructure topology on a low-voltage GaAs thyristor main parameters

    Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  156–160
  8. Ferromagnetic GaMnAs layers obtained by implantation of manganese ions followed by pulsed laser annealing

    Fizika Tverdogo Tela, 65:12 (2023),  2230–2238
  9. Creation of GaMnAs ferromagnetic semiconductor by combined laser method

    Fizika Tverdogo Tela, 65:5 (2023),  754–761
  10. Ge/Si(001) heteroepitaxial layers doped in the HW CVD process by impurity evaporation from a sublimating Ge source

    Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  719–724
  11. Galvanomagnetic and thermomagnetic phenomena in thin metal CoPt films

    UFN, 193:3 (2023),  331–339
  12. Circularly polarized electroluminescence of InGaAs/GaAs/CoPt spin light emitting diodes placed in a strong and weak magnetic field

    Zhurnal Tekhnicheskoi Fiziki, 92:5 (2022),  724–730
  13. Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer

    Fizika Tverdogo Tela, 63:9 (2021),  1245–1252
  14. Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type

    Fizika Tverdogo Tela, 63:7 (2021),  866–873
  15. Effect of ion irradiation on the magnetic properties of CoPt films

    Fizika Tverdogo Tela, 63:3 (2021),  324–332
  16. Methods for switching radiation polarization in GaAs laser diodes

    Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1409–1414
  17. Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  38–41
  18. Diode heterostructures with a ferromagnetic (Ga, Mn)As layer

    Fizika Tverdogo Tela, 62:3 (2020),  373–380
  19. Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  868–872
  20. Circularly polarized electroluminescence of spin LEDs with a ferromagnetic (In,Fe)Sb injector

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:14 (2020),  17–20
  21. Long-range magnetic interaction in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  40–43
  22. Modifying the magnetic properties of the CoPt alloy by ion irradiation

    Fizika Tverdogo Tela, 61:9 (2019),  1694–1699
  23. Micromagnetic and magneto-optical properties of ferromagnetic/heavy metal thin film structures

    Fizika Tverdogo Tela, 61:9 (2019),  1628–1633
  24. Studying magnetic diodes with a GaMnAs layer formed by pulsed laser deposition

    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  351–358
  25. Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019),  33–36
  26. Detectors of circularly polarized radiation based on semiconductor heterostructures with a CoPt Schottky barrier

    Fizika Tverdogo Tela, 60:11 (2018),  2236–2239
  27. Formation of a domain structure in multilayer CoPt films by magnetic probe of an atomic force microscope

    Fizika Tverdogo Tela, 60:11 (2018),  2158–2165
  28. Raising the operating temperature of (Ga,Mn)As/GaAs spin light emitting diodes by applying post-growth treatment

    Fizika Tverdogo Tela, 60:11 (2018),  2141–2146
  29. The study of features of formation and properties of À$^{3}$Â$^{5}$ semiconductors highly doped with iron

    Fizika Tverdogo Tela, 60:11 (2018),  2137–2140
  30. Phase separation in GaMnAs layers grown by laser pulsed deposition

    Fizika Tverdogo Tela, 60:5 (2018),  940–946
  31. The effect of the composition of a carrier gas during the growth of a Mn delta-layer on the electrical and magnetic properties of GaAs structures

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1286–1290
  32. Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions

    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  873–880
  33. Photoconductive detector of circularly polarized radiation based on a MIS structure with a CoPt layer

    Fizika Tverdogo Tela, 59:11 (2017),  2203–2205
  34. Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature

    Fizika Tverdogo Tela, 59:11 (2017),  2200–2202
  35. Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer

    Fizika Tverdogo Tela, 59:11 (2017),  2196–2199
  36. Methods for spin injection managing in InGaAs/GaAs/Al$_{2}$O$_{3}$/CoPt spin light-emitting diodes

    Fizika Tverdogo Tela, 59:11 (2017),  2135–2141
  37. Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing

    Fizika Tverdogo Tela, 59:11 (2017),  2130–2134
  38. Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence

    Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017),  1539–1544
  39. Contactless characterization of manganese and carbon delta-layers in gallium arsenide

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1473–1479
  40. Features of the selective manganese doping of GaAs structures

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1468–1472
  41. Optical thyristor based on GaAs/InGaP materials

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1443–1446
  42. Properties of CoPt ferromagnetic layers for application in spin light-emitting diodes

    Fizika Tverdogo Tela, 58:11 (2016),  2186–2189
  43. Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing

    Fizika Tverdogo Tela, 58:11 (2016),  2140–2144
  44. Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer $\delta$-doped with Mn

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1490–1496
  45. On the crystal structure and thermoelectric properties of thin MnSi$_{x}$ films

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1473–1478
  46. Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1463–1468
  47. GaAs structures with a gate dielectric based on aluminum-oxide layers

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  204–207
  48. Nonlinear room-temperature Hall effect in $n$-InFeAs layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016),  63–71
  49. CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1649–1653
  50. Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1497–1500
  51. Epitaxial growth of MnGa/GaAs layers for diodes with spin injection

    Fizika Tverdogo Tela, 56:10 (2014),  2062–2065
  52. Chemical and phase composition of GaMnAs/GaAs/InGaAs spin light-emitting diodes

    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  839–844
  53. Structural studies of a ferromagnetic GaMnSb layer

    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1613–1616
  54. Photoreflectance of GaAs structures with a Mn $\delta$-doped layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:22 (2013),  56–63
  55. GaMnSb/InGaAs/GaAs heterostructure leds with a ferromagnetic injector layer

    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1554–1560
  56. Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity

    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1527–1531
  57. A magnetically controlled LED with $S$-shaped current-voltage characteristic

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:22 (2012),  87–94
  58. LEDs based on InGaAs/GaAs heterostructures with magnetically controlled electroluminescence

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:24 (2011),  57–65
  59. Beatings of Shubnikov-de Haas oscillations in a two-dimensional hole system in an InGaAs quantum well

    Pis'ma v Zh. Èksper. Teoret. Fiz., 91:6 (2010),  312–317
  60. Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors

    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1447–1450
  61. Anisotropic magnetoresistance and planar hall effect in GaAs structure with Mn-delta-doped layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  46–53

© Steklov Math. Inst. of RAS, 2026