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Latyshev Aleksandr Vasil'evich

Publications in Math-Net.Ru

  1. In situ Reflection High-Energy Electron Diffraction observation of graphene layer formation on 6H-SiC Substrate

    Fizika i Tekhnika Poluprovodnikov, 59:2 (2025),  102–108
  2. Indium interaction with the Bi$_2$Se$_3$(0001) surface under the low-temperature deposition

    Fizika i Tekhnika Poluprovodnikov, 58:11 (2024),  606–611
  3. $\beta\Longleftrightarrow\beta'$ phase transition with temperature hysteresis in In$_2$Se$_3$ films

    Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  370–375
  4. Low-frequency microwave response of a quantum point contact

    Pis'ma v Zh. Èksper. Teoret. Fiz., 114:2 (2021),  108–113
  5. Photon-stimulated transport in a quantum point contact (brief review)

    Pis'ma v Zh. Èksper. Teoret. Fiz., 113:5 (2021),  328–340
  6. Modulation of magneto-intersubband oscillations in a one-dimensional lateral superlattice

    Pis'ma v Zh. Èksper. Teoret. Fiz., 110:5 (2019),  337–342
  7. Electromigration effect on vacancy islands nucleation on Si(100) surface during sublimation

    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  805–809
  8. Micro-pits evolution on large terraces of Si(111) surface during high-temperature annealing

    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  456–461
  9. Local anodic oxidation of thin GeO films and formation of nanostructures based on them

    Fizika Tverdogo Tela, 60:4 (2018),  696–700
  10. New method of porous Ge layer fabrication: structure and optical properties

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  517
  11. Thermal smoothing and roughening of GaAs surfaces: experiment and Monte Carlo simulation

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  514
  12. AlInAs quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 105:2 (2017),  93–99
  13. Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe

    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  443–445
  14. Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  212–215
  15. Indium nanowires at the silicon surface

    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  918–920
  16. Atomic steps on an ultraflat Si(111) surface upon sublimation

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  607–611
  17. Optical and electrical properties of silicon nanopillars

    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  961–965
  18. Electroluminescent 1.5-$\mu$m light-emitting diodes based on $p^+$-Si/NC $\beta$-FeSi$_2$/$n$-Si structures

    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  519–523
  19. Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  35–40
  20. Raman scattering in PbTe and PbSnTe films: In situ phase transformations

    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  185–189
  21. Microwave response of a ballistic quantum dot

    Pis'ma v Zh. Èksper. Teoret. Fiz., 98:11 (2013),  806–810
  22. Fine structure of the exciton states in InAs quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:5 (2013),  313–318
  23. Folding of acoustic-phonon modes in GaAs/AlAs (311)A superlattices in the direction perpendicular to nanofacets

    Pis'ma v Zh. Èksper. Teoret. Fiz., 95:2 (2012),  76–79
  24. Features of the structure and properties of $\beta$-FeSi$_2$ nanofilms and a $\beta$-FeSi$_2$/Si interface

    Pis'ma v Zh. Èksper. Teoret. Fiz., 95:1 (2012),  23–28
  25. Forming interface in Pd/Fe/GaAs/InGaAs structure for optical detector of free-electron spin

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:1 (2012),  27–36
  26. Effect of dislocations on the shape of islands during silicon growth on the oxidized Si(111) surface

    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:6 (2011),  477–480
  27. Spontaneous composition modulation during Cd$_{x}$Hg$_{1-x}$Te(301) molecular beam epitaxy

    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:4 (2011),  348–352
  28. Drift of adatoms on the (111) silicon surface under electromigration conditions

    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:2 (2011),  151–156
  29. Formation of Ge clusters at a Si(111)-Bi-$\sqrt{3}\times\sqrt{3}$ surface

    Pis'ma v Zh. Èksper. Teoret. Fiz., 93:11 (2011),  740–745
  30. Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation

    Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011),  665–668
  31. Two-dimensional electron gas in a lattice of antidots with a period of 80 nm

    Pis'ma v Zh. Èksper. Teoret. Fiz., 91:3 (2010),  145–149
  32. 1.5–1.6 $\mu$m photoluminescence of silicon layers with a high density of lattice defects

    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  452–457
  33. Modification of germanium nanoclusters in GeO$_x$ films during isochronous furnace and pulse laser annealing

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  102–110
  34. Conductance of short quantum wires with sharp boundaries

    Pis'ma v Zh. Èksper. Teoret. Fiz., 86:10 (2007),  752–756
  35. New resonant backscattering mode in a small-size quantum interferometer

    Pis'ma v Zh. Èksper. Teoret. Fiz., 83:10 (2006),  530–533
  36. Observation of antiphase domains in CdxHg1−xTe films on silicon by the phase contrast method in atomic force microscopy

    Pis'ma v Zh. Èksper. Teoret. Fiz., 82:5 (2005),  326–330
  37. Temperature dependence of Aharonov-Bohm oscillations in small quasi-ballistic interferometers

    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:12 (2005),  762–765
  38. Instability of the distribution of atomic steps on Si(111) upon submonolayer gold adsorption at high temperatures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:3 (2005),  149–153
  39. Aharonov–Bohm oscillation amplitude in small ballistic interferometers

    Pis'ma v Zh. Èksper. Teoret. Fiz., 79:3 (2004),  168–172
  40. Commensurate oscillations of the magnetoresistance of a two-dimensional electron gas in GaAs quantum wells with corrugated heteroboundaries

    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:12 (2003),  794–797
  41. Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates

    Pis'ma v Zh. Èksper. Teoret. Fiz., 74:3 (2001),  182–185
  42. Monatomic steps on silicon surfaces

    UFN, 168:10 (1998),  1117–1127
  43. Behavior of monoatomic steps on silicon $(\mathrm{III})$ surface during the sublimation under conditions of the electric current heating

    Dokl. Akad. Nauk SSSR, 300:1 (1988),  84–88

  44. Aleksandr Sergeevich Sigov (on his 80th birthday)

    UFN, 195:6 (2025),  673–674
  45. Yurii Nikolaevich Kul'chin (on his 70th birthday)

    UFN, 193:3 (2023),  341–342
  46. Sergei Nikolaevich Bagayev (on his 80th birthday)

    UFN, 191:10 (2021),  1123–1124
  47. In memory of Vladislav Ivanovich Pustovoit

    UFN, 191:8 (2021),  899–900
  48. Zakharii Fishelevich Krasilnik (on his 70th birthday)

    UFN, 188:1 (2018),  119–120
  49. Игорь Георгиевич Неизвестный (к 80-летию со дня рождения)

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  286–287
  50. Errata

    Pis'ma v Zh. Èksper. Teoret. Fiz., 83:12 (2006),  692

© Steklov Math. Inst. of RAS, 2026