Zhmerik Valentin Nikolaevich

Publications in Math-Net.Ru

1. Local doping of monolayer WSe$_2$ on piezoelectric GaInP$_2$ and GaN substrates
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  401–408
2. Solar-blind Schottky photodiodes based on AlGaN:Si/AlN, grown by plasma-activated molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:20 (2024),  16–19
3. Two-dimensional excitons in multiple GaN/AlN monolayer quantum wells
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 113:8 (2021),  507–513
4. Structural and dynamical properties of short-period GaN/AlN superlattices: Experiment and theory
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1397
5. An increase of threading dislocations filtering efficiency in AlN/$c$-Al$_{2}$O$_{3}$ templates with faceted surface morphology during a growth by molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  26–30
6. Decreasing density of grown-in dislocations in AlN/$c$-sapphire templates grown by plasma-activated molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020),  36–39
7. Boson peak related to Ga-nanoclusters in AlGaN layers grown by plasma-assisted molecular beam epitaxy at Ga-rich conditions
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1519
8. Stimulated emission, photoluminescence, and localisation of nonequilibrium charge carriers in ultrathin (monolayer) GaN/AlN quantum wells
   
   Kvantovaya Elektronika, 49:6 (2019),  535–539
9. Features of the selective growth of GaN nanorods on patterned $c$-sapphire substrates of various configurations
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1663–1667
10. Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on $\mu$-cone patterned sapphire substrates by plasma-assisted MBE
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  526
11. Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  515
12. Spontaneous formation of indium clusters in InN epilayers grown by molecular-beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  42–49
13. Stress generation and relaxation in (Al, Ga)N/6$H$-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017),  67–74
14. Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III–N heterostructures by molecular-beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:5 (2017),  60–67
15. AlGaN nanostructures with extremely high quantum yield at 300 K
    
    Fizika Tverdogo Tela, 58:11 (2016),  2180–2185
16. Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  921–926
17. Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  57–63
18. X-ray diffractometry of AlN/$c$-sapphire templates obtained by plasma-activated molecular beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  61–69
19. Temperature switching of cavity modes in InN microcrystals
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1484–1488
20. Temperature dependences of the contact resistivity in ohmic contacts to $n^+$-InN
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  472–482
21. Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  254–260
22. Quantum-confined stark effect and localization of charge carriers in Al$_{0.3}$Ga$_{0.7}$N/Al$_{0.4}$Ga$_{0.6}$N quantum wells with different morphologies
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1022–1026
23. RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  96–102
24. Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  88–95
25. Electronic structure of a Ba/n-AlGaN(0001) interface and the formation of a degenerate 2D electron gas
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 91:12 (2010),  739–743


26. Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on $c$-sapphire substrates
    
    Fizika Tverdogo Tela, 55:10 (2013),  2058–2066