Mansurov Vladimir Gennad'evich

Publications in Math-Net.Ru

1. Chemical kinetics of the Si(111) surface nitridation process at temperatures below the structural phase transition (7$\times$7)$\to$(1$\times$1)
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  349–357
2. Determination of the AlN nucleation layer thickness formed on the Al$_2$O$_3$ (0001) surface during nitridation process by XPS and IR spectroscopy
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  734–741
3. Forming the GaN nanocrystals on the graphene-like $g$-AlN and $g$-Si$_{3}$N$_{3}$ surface
   
   Fizika Tverdogo Tela, 61:12 (2019),  2327–2332
4. Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  21–24
5. Formation of a graphene-like SiN layer on the surface Si(111)
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1407–1413
6. Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  643–650
7. AlN/GaN heterostructures for normally-off transistors
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  395–402
8. Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects
   
   Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1059–1063
9. Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures
   
   Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  191–194
10. Normally off transistors based on in situ passivated AlN/GaN heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016),  72–79
11. MBE-grown AlGaN/GaN heterostructures for UV photodetectors
    
    Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015),  67–73
12. Increase in the diffusion length of minority carriers in Al$_x$Ga$_{1-x}$N ($x$ = 0–0.1) fabricated by ammonia molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1329–1334
13. Nitridation of an unreconstructed and reconstructed $(\sqrt{31}\times\sqrt{31})R\pm9^\circ$ (0001) sapphire surface in an ammonia flow
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  925–931
14. Linearly polarized photoluminescence from an ensemble of wurtzite GaN/AlN quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 91:9 (2010),  498–500
15. Role of lateral interaction in the homoepitaxy of GaAs on the (001)-$\beta(2\times 4)$ surface
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 86:7 (2007),  553–557
16. Asymmetric c(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 84:9 (2006),  596–600
17. Critical phenomena in the β-(2×4) → α-(2×4) reconstruction transition on the (001) GaAs surface
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:12 (2005),  766–770
18. Photoluminescence kinetics of wurtzite GaN quantum dots in an AlN matrix
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:2 (2005),  70–73
19. Quasiballistic quantum interferometer
    
    UFN, 165:2 (1995),  227–229