Dmitriev Dmitry Vladimirovich

Publications in Math-Net.Ru

1. The electrochemical profiling of $n^+/n$ GaAs structures for field-effect transistors
   
   Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  53–61
2. Determination of the flow and activation energy of phosphorus desorption during annealing of an InP(001) substrate in an arsenic flux under molecular beam epitaxy conditions
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  646–650
3. Determination of the donor impurity concentration in thin $i$-InGaAs layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:21 (2022),  40–42
4. AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:17 (2022),  20–23
5. InGaAlAs/InAlAs heterostructures for electro-absorption modulator
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:13 (2022),  37–41
6. GaAs/AlGaAs- and InGaAs/AlGaAs heterostructures for high-power semiconductor infrared emitters
   
   Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021),  1727–1731
7. High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures
   
   Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021),  1158–1163
8. Substitution of phosphorus at the InP(001) surface upon annealing in an arsenic flux
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  877–881
9. Study of the density of interface states at the insulator/In$_{0.52}$Al$_{0.48}$As interface
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  10–13
10. Non-classical light sources based on selectively positioned deterministic microlenses structures and (111) In(Ga)As quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1338–1342
11. High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  52–54
12. The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  59–62
13. Spectroscopy of single AlInAs and (111)-oriented InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1326–1330
14. AlInAs quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 105:2 (2017),  93–99
15. Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1451–1455
16. Features of current flow in structures based on Au/Ti/$n$-InAlAs Schottky barriers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017),  83–89
17. Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  35–40
18. Exciton-plasmon interaction in hybrid quantum dot/metal cluster structures fabricated by molecular-beam epitaxy
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 99:4 (2014),  245–249
19. Terahertz radiation-induced magnetoresistance oscillations of a high-density and high-mobility two-dimensional electron gas
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:1 (2013),  45–48
20. Transport relaxation time and quantum lifetime in selectively doped GaAs/AlAs heterostructures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 95:8 (2012),  467–471
21. Forming interface in Pd/Fe/GaAs/InGaAs structure for optical detector of free-electron spin
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:1 (2012),  27–36
22. Nonradiative exciton transfer by the Förster mechanism from InAs/AlAs quantum dots to dye molecules in hybrid structures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:10 (2011),  828–831
23. Surfactant properties of cesium in molecular beam epitaxy of GaAs(100)
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011),  647–652
24. Recombination of charge carriers in the GaAs-based $p$–$i$–$n$ diode
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1407–1410
25. Role of lateral interaction in the homoepitaxy of GaAs on the (001)-$\beta(2\times 4)$ surface
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 86:7 (2007),  553–557
26. Asymmetric c(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 84:9 (2006),  596–600
27. Critical phenomena in the β-(2×4) → α-(2×4) reconstruction transition on the (001) GaAs surface
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:12 (2005),  766–770