Mashanov Vladimir Ivanovich

Publications in Math-Net.Ru

1. Effect of Ge nanolayers and quantum dots on photoluminescence properties of GeSiSn/Si heterostructures
   
   Fizika Tverdogo Tela, 67:9 (2025),  1642–1646
2. Photoelectric properties of structures with GeSiSn|Ge multiple quantum wells and relaxed GeSiSn layers
   
   Fizika Tverdogo Tela, 66:11 (2024),  1871–1878
3. Investigation of the effect of annealing and composition on infrared photoluminescence of GeSiSn/Si multiple quantum well nanoheterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  765–769
4. Formation of a stepped Si(100) surface and its effect on the growth of Ge islands
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  409–413
5. Strained multilayer structures with pseudomorphic GeSiSn layers
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1610–1614
6. Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1630–1634
7. Relaxation of mechanical stresses in an array of Ge quantum dots obtained in Si
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 86:5 (2007),  397–400