Kyuregyan Alexander Surenovich

Publications in Math-Net.Ru

1. Excitation of copper vapor lasers by storage capacitor direct discharge via high-speed photothyristors
   
   Optics and Spectroscopy, 126:4 (2019),  471–476
2. High voltage diffused step recovery diodes. II. Theory
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  985–990
3. High voltage diffused step recovery diodes. I. Numerical simulation
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  978–984
4. High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$–$n$ junctions. III. Self-heating effects
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  528–532
5. Large-amplitude shock electromagnetic wave in a nonlinear transmission line based on a distributed semiconductor diode
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  520–527
6. Optimal doping of diode current interrupters
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  359–365
7. High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$–$n$ junctions: II. Energy efficiency
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1263–1266
8. High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$–$n$ junctions: I. Physics of the switching process
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1257–1262
9. Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors
   
   Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  973–978
10. On measurements of the electrons and holes impact-ionization coefficients in 4$H$–SiC
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  293–297
11. Avalanche mode of high-voltage overloaded $p^+$–$i$–$n^+$ diode switching to the conductive state by pulsed illumination
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  989–993
12. Picosecond switching of high-voltage reverse-biased $p^+$–$n$–$n^+$ structures to the conductive state by pulsed light
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1686–1692
13. Theory of steady-state plane tunneling-assisted impact ionization waves
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  970–978
14. Edge inversion channels and surface leakage currents in high-voltage semiconductor devices
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  372–378
15. On the maximum thickness of the space-charge region of reverse biased $p^+$–$n$ junctions with a positive bevel
    
    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  67–69
16. Numerical simulation of evolution of electron-hole avalanches and streamers in silicon in a uniform electric field
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1310–1317
17. Effect of diffusion on the velocity of stationary impact ionization waves in semiconductors
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 86:5 (2007),  360–364
18. Влияние крупномасштабных флуктуаций распределения примесей на туннелирование и электропоглощение в обратно смещенных $p{-}n$-переходах
    
    Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1162–1168
19. Ударная ионизация в кремнии, выращенном различными методами
    
    Fizika i Tekhnika Poluprovodnikov, 24:3 (1990),  560–563
20. Напряжение лавинного пробоя $p{-}n$-переходов на основе Si, Ge, SiC, GaAs, GaP и InP при комнатной температуре
    
    Fizika i Tekhnika Poluprovodnikov, 23:10 (1989),  1819–1827
21. Температурная зависимость напряжения лавинного пробоя $p{-}n$-переходов с глубокими уровнями
    
    Fizika i Tekhnika Poluprovodnikov, 23:7 (1989),  1164–1172
22. Прыжковая генерация носителей заряда в истощенных слоях полупроводников с непрерывным спектром локализованных состояний
    
    Fizika i Tekhnika Poluprovodnikov, 23:1 (1989),  110–116
23. Electron distribution function in one-dimensional metals in strong electric fields
    
    Fizika Tverdogo Tela, 30:1 (1988),  236–238
24. CROSS TRANSFER OF ELECTRONS AND HOLES UNDER AVALANCHE MULTIPLICATION IN SEMICONDUCTING DEVICES
    
    Zhurnal Tekhnicheskoi Fiziki, 58:1 (1988),  172–174
25. SHOCK IONIZATION AND AVALANCHE MULTIPLICATION IN CLASSICAL SUPERCONDUCTING SUPERLATTICES
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:24 (1988),  2278–2282
26. Differential Resistance of $p{-}n$ Junctions with Deep Levels under Avalanche Breakdown
    
    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  941–944
27. Static Electric Conductivity of Silicon in a High Electric Field due to Linear Dislocations
    
    Fizika i Tekhnika Poluprovodnikov, 21:2 (1987),  362–364
28. MECHANISMS OF THE BREAKDOWN TENSION REDUCTION IN SILICON HIGH-VOLTAGE MULTI-LAYERED STRUCTURES
    
    Zhurnal Tekhnicheskoi Fiziki, 55:7 (1985),  1419–1425


29. Correction
    
    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  957