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Publications in Math-Net.Ru
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Effect of design and growth conditions of metamorphic In(Ga,Al)As/GaAs heterostructures on electrical properties of In$_{0.75}$Ga$_{0.25}$As/InAlAs two-dimensional channel
Fizika i Tekhnika Poluprovodnikov, 58:3 (2024), 142–148
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Low Temperature Electrical Properties of CVD Graphene on LiNbO$_3$: Acoustic Studies
Fizika i Tekhnika Poluprovodnikov, 56:1 (2022), 120–127
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Nonlinear AC and DC conductivities in a two-subband $n$-GaAs/AlAs heterostructure
Pis'ma v Zh. Èksper. Teoret. Fiz., 112:1 (2020), 54–61
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AC and DC conductivities in an $n$-GaAs/AlAs heterostructure with a wide quantum well in the integer quantum Hall effect regime
Pis'ma v Zh. Èksper. Teoret. Fiz., 110:1 (2019), 62–67
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Static and high-frequency hole transport in $p$-Si/SiGe heterostructures in the extreme quantum limit
Pis'ma v Zh. Èksper. Teoret. Fiz., 86:4 (2007), 274–278
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Metal$-$dielectric transition in a magnetic field in heavily doped indium antimonide
Fizika i Tekhnika Poluprovodnikov, 26:8 (1992), 1446–1461
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Ultrasound absorption in lightly doped, compensated $n$-$\mathrm{InSb}$ at ultralow temperatures
Fizika Tverdogo Tela, 32:9 (1990), 2579–2585
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Кинетические явления в компенсированном $n$-InSb при низких
температурах (Обзор)
Fizika i Tekhnika Poluprovodnikov, 24:1 (1990), 3–24
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Magnetic field-induced I-M transition in doped, strongly compensated $n$-$\mathrm{InSb}$
Fizika Tverdogo Tela, 30:10 (1988), 3118–3125
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Ultrasound absorption inc ompensated $n$-$\mathrm{InSb}$
Fizika Tverdogo Tela, 29:8 (1987), 2374–2379
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Determination of Free-Electron Concentration in Compensated $n$-Type InSb Using Ultrasoun Absorption
Fizika i Tekhnika Poluprovodnikov, 21:1 (1987), 124–128
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Effect of impurity-induced breakdown on ultrasound absorption in compensated $n$-$\mathrm{InSb}$
Fizika Tverdogo Tela, 28:11 (1986), 3374–3379
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Hopping mechanism of electron absorption of sound in heavily compensated $n$-$\mathrm{InSb}$
Fizika Tverdogo Tela, 28:3 (1986), 701–707
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Nonlinear ultrasound absorption in heavily-doped $n$-$\mathrm{InSb}$
Fizika Tverdogo Tela, 27:2 (1985), 499–503
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Ultrasound absorption in compensated $n$-$\mathrm{InSb}$ at low temperatures
Fizika Tverdogo Tela, 26:7 (1984), 2048–2052
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Possibility of Obtaining and Using the Effect of Amplification of Ultrasound by a Semiconductor in a Magnetic Field
UFN, 98:4 (1969), 738–739
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