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Volodin Vladimir Alekseevich

Publications in Math-Net.Ru

  1. Electronic structure and shallow traps nature in silicon-enriched SiO$_x$N$_y$: ab initio simulation

    Fizika Tverdogo Tela, 67:1 (2025),  126–131
  2. Optical properties of non-stoichiometric titanium oxides

    Optics and Spectroscopy, 133:1 (2025),  57–64
  3. Mechanism of charge transport in ITO/[GeO$_x$]$_{(z)}$[SiO$_2$]$_{(1-z)}$ (0.25 $\le z\le1$)/$n^+$-Si MIS structures

    Fizika i Tekhnika Poluprovodnikov, 59:6 (2025),  363–369
  4. Complexes of intrinsic point defects in silicon formed as a result of high-energy xenon ion implantation and post-implantation annealing

    Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  298–301
  5. Structure and kinetics of disproportionation of GeO thin films

    Fizika Tverdogo Tela, 66:9 (2024),  1585–1590
  6. Raman scattering behavior of hybrid polymeric complexes of polyvinyl alcohol with CuCl$_2$ and Cu(OH)$_2$/CuO

    Fizika Tverdogo Tela, 66:6 (2024),  1000–1004
  7. Growth of silicene by molecular beam epitaxy on CaF$_2$/Si(111) substrates modified by electron irradiation

    Pis'ma v Zh. Èksper. Teoret. Fiz., 119:9 (2024),  692–696
  8. Resistance change of thin films Bi$_2$Se$_3$ and heterostructures Bi$_2$Se$_3$ on graphene under tensile deformation

    Zhurnal Tekhnicheskoi Fiziki, 94:2 (2024),  261–266
  9. Determination of the activation energy of the disproportionation reaction of amorphous GeO$_x$ film on quartz substrate using Raman spectroscopy

    Zhurnal Tekhnicheskoi Fiziki, 93:8 (2023),  1209–1215
  10. Composition and optical properties of amorphous plasma-chemical silicon oxynitride of variable composition a-SiO$_x$N$_y$:H

    Zhurnal Tekhnicheskoi Fiziki, 93:4 (2023),  575–582
  11. The reason for the revision of conjugated polymers Raman bands attribution

    Optics and Spectroscopy, 131:2 (2023),  260–263
  12. Influence of current density on the structure of thin films of amorphous silicon suboxide during electron beam annealing

    Prikl. Mekh. Tekh. Fiz., 64:5 (2023),  52–58
  13. Synthesis of epitaxial structures with two-dimensional si layers embedded in a CaF$_2$ dielectric matrix

    Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022),  608–613
  14. Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO$_2$] films using electron beam annealing

    Zhurnal Tekhnicheskoi Fiziki, 92:9 (2022),  1402–1409
  15. Structural and optical properties of two-dimensional Si and Ge layers formed by molecular beam epitaxy on CaF$_2$/Si(111) substrates

    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  748–752
  16. Germanium diffusion from buried SiO$_2$ layer and SiGe phase formation

    Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  192–198
  17. High-temperature annealing of thin silicon suboxide films produced by the method of gas-jet chemical deposition with activation by electron-beam plasma

    Prikl. Mekh. Tekh. Fiz., 63:5 (2022),  33–41
  18. Atomic structure and optical properties of plasma enhanced chemical vapor deposited SiCOH Low-k dielectric film

    Optics and Spectroscopy, 129:5 (2021),  618
  19. Atomic structure and optical properties of CaSi$_2$ layers grown on CaF$_2$/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  725–728
  20. Formation of germanium nanocrystals in GeO[SiO$_{2}$] and GeO[SiO] films

    Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  507–512
  21. Gold-induced crystallization of thin films of amorphous silicon suboxide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  35–38
  22. Vertical ordering of amorphous Ge nanoclusters in multilayer $a$-Ge/$a$-Si:H heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021),  13–16
  23. Electron-beam crystallization of thin films of amorphous silicon suboxide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  26–28
  24. Quantum size effects in germanium nanocrystals and amorphous nanoclusters in GeSi$_x$O$_y$ films

    Fizika Tverdogo Tela, 62:3 (2020),  434–441
  25. Structure of germanium monoxide thin films

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1296–1301
  26. Effect of interfaces and thickness on the crystallization kinetics of amorphous germanium films

    Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  643–647
  27. On the formation of amorphous Ge nanoclusters and Ge nanocrystals in GeSi$_{x}$O$_{y}$ films on quartz substrates by furnace and pulsed laser annealing

    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  251–258
  28. Indium-induced crystallization of thin films of amorphous silicon suboxide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:12 (2020),  14–17
  29. Femtosecond laser annealing of multilayer thin-film structures based on amorphous germanium and silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  43–46
  30. Nanoscale potential fluctuations in SiO$_{x}$ synthesized by the plasma enhanced chemical vapor deposition

    Fizika Tverdogo Tela, 61:12 (2019),  2528–2535
  31. Vibrational and light-emitting properties of Si/Si$_{1-x}$Sn$_x$ heterostructures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019),  371–374
  32. The use of spectral ellipsometry and Raman spectroscopy in the screening diagnosis of colorectal cancer

    Optics and Spectroscopy, 127:1 (2019),  170–176
  33. Luminescent properties of float zone silicon irradiated with swift heavy ions

    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1467–1470
  34. Raman scattering in InSb spherical nanocrystals ion-synthesized in silicon-oxide films

    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  502–507
  35. Crystallization of amorphous germanium films and multilayer $a$-Ge/$a$-Si structures upon exposure to nanosecond laser radiation

    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  423–429
  36. Atomic and electronic structures of metal-rich noncentrosymmetric ZrO$_x$

    Pis'ma v Zh. Èksper. Teoret. Fiz., 108:4 (2018),  230–235
  37. Optical properties of nonstoichiometric tantalum oxide TaO$_{x}$ ($x<$ 5/2) according to spectral-ellipsometry and Raman-scattering data

    Optics and Spectroscopy, 124:6 (2018),  777–782
  38. On the formation of IR-light-emitting Ge nanocrystals in Ge:SiO$_{2}$ films

    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1056–1065
  39. Forbidden resonant Raman scattering in GaAs/AlAs superlattices: experiment and calculations

    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  569–574
  40. New method of porous Ge layer fabrication: structure and optical properties

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  517
  41. Ion-beam synthesis of the crystalline Ge phase in SiO$_{x}$N$_{y}$ films upon annealing under high pressure

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  280–284
  42. Local oscillations of silicon–silicon bonds in silicon nitride

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018),  37–45
  43. Splitting of frequencies of optical phonons in tensile-strained germanium layers

    Pis'ma v Zh. Èksper. Teoret. Fiz., 105:5 (2017),  305–310
  44. Formation and study of $p$–$i$–$n$ structures based on two-phase hydrogenated silicon with a germanium layer in the $i$-type region

    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1420–1425
  45. Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1289–1294
  46. Optical properties of $p$–$i$–$n$ structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  952–957
  47. Redshift of the absorption edge in tensile-strained germanium layers

    Pis'ma v Zh. Èksper. Teoret. Fiz., 101:6 (2015),  455–458
  48. Anisotropy of long-wavelength optical phonons in GaAs/AlAs superlattice

    Pis'ma v Zh. Èksper. Teoret. Fiz., 99:7 (2014),  463–466
  49. Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose

    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1339–1343
  50. Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO$_2$/Si substrate

    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  827–823
  51. Raman scattering in PbTe and PbSnTe films: In situ phase transformations

    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  185–189
  52. Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions

    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  591–597
  53. Influence of irradiation with swift heavy ions on multilayer Si/SiO$_2$ heterostructures

    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  334–339
  54. Anomalous temperature dependence of photoluminescence in GeO$_{x}$

    Pis'ma v Zh. Èksper. Teoret. Fiz., 95:8 (2012),  472–476
  55. Folding of acoustic-phonon modes in GaAs/AlAs (311)A superlattices in the direction perpendicular to nanofacets

    Pis'ma v Zh. Èksper. Teoret. Fiz., 95:2 (2012),  76–79
  56. Quantum-confinement effect in silicon-on-insulator films implanted with high doses of hydrogen ions

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1309–1313
  57. Anisotropy of phonon-plasmon modes in GaAs/AlAs(311) superlattices

    Fizika Tverdogo Tela, 53:2 (2011),  377–379
  58. Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation

    Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011),  665–668
  59. Formation of light-emitting nanostructures in layers of stoichiometric SiO$_2$ irradiated with swift heavy ions

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1363–1368
  60. Crystallization of hydrogenated amorphous silicon films by exposure to femtosecond pulsed laser radiation

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  268–273
  61. Formation of silicon nanocrystals in SiN$_x$ film on PET substrates using femtosecond laser pulses

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:13 (2011),  62–69
  62. Formation and crystallization of silicon nanoclusters in SiN$_x$ :H films using femtosecond pulsed laser annealings

    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1660–1665
  63. X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO$_2$ and Si sources

    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  550–555
  64. Modification of germanium nanoclusters in GeO$_x$ films during isochronous furnace and pulse laser annealing

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  102–110
  65. Experimental discovery of the anisotropy of phonon-plasmon modes in GaAs/AlAs(100) superlattices

    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:8 (2009),  483–485
  66. Quasi-direct optical transitions in Ge nanocrystals embedded in GeO$_2$ matrix

    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009),  84–88
  67. Phase transitions in $a$-Si:H films on a glass irradiated by high-power femtosecond pulses: Manifestation of nonlinear and nonthermal effects

    Pis'ma v Zh. Èksper. Teoret. Fiz., 86:2 (2007),  128–131
  68. Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum

    Pis'ma v Zh. Èksper. Teoret. Fiz., 82:2 (2005),  91–94
  69. Phonon localization in Ge nanoislands and its manifestation in Raman spectra

    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:7 (2005),  415–418
  70. Visible photoluminescence from silicon nanopowders produced by silicon evaporation in a high-power electron beam

    Pis'ma v Zh. Èksper. Teoret. Fiz., 80:8 (2004),  619–622
  71. Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy

    Pis'ma v Zh. Èksper. Teoret. Fiz., 79:7 (2004),  411–415
  72. Photoluminescence of GeO$_2$ films containing germanium nanocrystals

    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:8 (2003),  485–488
  73. An exact solution of the relativistic Klein–Gordon wave equation

    Zh. Vychisl. Mat. Mat. Fiz., 31:6 (1991),  877–886

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