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Dvurechenskii Anatolii Vasil'evich

Publications in Math-Net.Ru

  1. Photoluminescence of Ge/Si heterostructures with quantum dots created by epitaxy from ion-molecular beams

    Fizika i Tekhnika Poluprovodnikov, 59:2 (2025),  55–59
  2. Growth of silicene by molecular beam epitaxy on CaF$_2$/Si(111) substrates modified by electron irradiation

    Pis'ma v Zh. Èksper. Teoret. Fiz., 119:9 (2024),  692–696
  3. Photocurrent enhancement in silicon photodiodes with Ge quantum dots by hybrid plasmonic and dielectric modes of a planar waveguide

    Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  386–392
  4. Manifestation of “slow” light in the photocurrent spectra of Ge/Si quantum dot layers combined with a photonic crystal

    Pis'ma v Zh. Èksper. Teoret. Fiz., 118:4 (2023),  240–244
  5. Synthesis of epitaxial structures with two-dimensional si layers embedded in a CaF$_2$ dielectric matrix

    Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022),  608–613
  6. Structural and optical properties of two-dimensional Si and Ge layers formed by molecular beam epitaxy on CaF$_2$/Si(111) substrates

    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  748–752
  7. Increase in the photocurrent in layers of Ge/Si quantum dots by modes of a two-dimensional photonic crystal

    Pis'ma v Zh. Èksper. Teoret. Fiz., 113:8 (2021),  501–506
  8. Electron spin resonance in heterostructures with ring molecules of GeSi quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 113:1 (2021),  58–62
  9. Dependence of luminescence properties of the ordered groups of epitaxially grown Ge(Si) nanoislands on the parameters of pit-patterned SOI substrate

    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1210–1215
  10. Atomic structure and optical properties of CaSi$_2$ layers grown on CaF$_2$/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  725–728
  11. Effect of adhesive layers on photocurrent enhancement in near-infrared quantum-dot photodetectors coupled with metal-nanodisk arrays

    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  596–601
  12. Luminescence of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups incorporated into photonic crystals

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  708–715
  13. Plasmonic field enhancement by metallic subwave lattices on silicon in the near-infrared range

    Pis'ma v Zh. Èksper. Teoret. Fiz., 110:6 (2019),  393–399
  14. Electron paramagnetic resonance in Ge/Si heterostructures with Mn-doped quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:4 (2019),  258–264
  15. Ordered arrays of Ge(Si) quantum dots embedded in two-dimensional photonic crystals

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1366–1371
  16. Plasmon enhancement of the electric field in mid-infrared Ge/Si quantum-dot photodetectors with different thicknesses of the active region

    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  206–210
  17. Analytical expression for the distribution of elastic strain created by a polyhedral inclusion with arbitrary eigenstrain

    Fizika Tverdogo Tela, 60:9 (2018),  1761–1766
  18. Localization of surface plasmon waves in hybrid photodetectors with subwavelength metallic arrays

    Pis'ma v Zh. Èksper. Teoret. Fiz., 108:6 (2018),  399–403
  19. Nucleation of three-dimensional Ge islands on a patterned Si(100) surface

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1346–1350
  20. Study of the structural and emission properties of Ge(Si) quantum dots ordered on the Si(001) surface

    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1028–1033
  21. Hall effect in hopping conduction in an ensemble of quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 106:5 (2017),  288–292
  22. Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 105:7 (2017),  419–423
  23. Photoluminescence enhancement in double Ge/Si quantum dot structures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:12 (2016),  845–848
  24. Enhancement of the hole photocurrent in layers of Ge/Si quantum dots with abrupt heterointerfaces

    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:7 (2016),  507–511
  25. Suppression of hole relaxation in small-sized Ge/Si quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 102:9 (2015),  678–682
  26. Temperature-stimulated transition from a macroscopic to a mesoscopic behavior of the hopping conductivity in a quantum-dot ensemble

    Pis'ma v Zh. Èksper. Teoret. Fiz., 102:5 (2015),  344–347
  27. Unusual narrowing of the ESR line width in ordered structures with linear chains of Ge/Si quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 102:2 (2015),  120–124
  28. Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 101:11 (2015),  846–850
  29. Conductance through chains of Ge/Si quantum dots: crossover from one-dimensional to quasi-one-dimensional hopping

    Pis'ma v Zh. Èksper. Teoret. Fiz., 101:1 (2015),  24–28
  30. Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation

    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  767–771
  31. Nucleation and growth of ordered groups of SiGe quantum dots

    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  155–159
  32. Bidirectional photocurrent of holes in layers of Ge/Si quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:2 (2014),  99–103
  33. On the process of hole trapping in Ge/Si heterostructures with Ge quantum dots

    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1065–1069
  34. Influence of optical phonon confinement on two-phonon capture processes in quantum dots

    Proceedings of the YSU, Physical and Mathematical Sciences, 2014, no. 2,  50–53
  35. Photoinduced and equilibrium optical absorption in Ge/Si quantum dots

    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1566–1570
  36. Structures with vertically stacked Ge/Si quantum dots for logical operations

    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  960–965
  37. Problem of optimal control in the system of semiconductor quantum points

    Avtomat. i Telemekh., 2011, no. 6,  108–114
  38. Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:10 (2011),  806–810
  39. The numerical technique of optimization of two-dimensional controlled voltage impulse in the quantum dots system

    Program Systems: Theory and Applications, 2:1 (2011),  27–38
  40. Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 92:1 (2010),  43–46
  41. Excitons in Ge/Si double quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:8 (2009),  621–625
  42. Bonding state of a hole in Ge/Si double quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 86:7 (2007),  549–552
  43. Hole states in artificial molecules formed by vertically coupled Ge/Si quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 85:9 (2007),  527–532
  44. Binding of electron states in multilayer strained Ge/Si heterostructures with type-II quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 83:4 (2006),  189–194
  45. Hole spin relaxation in Ge quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 82:5 (2005),  336–340
  46. The Meyer – Neldel rule in the processes of thermal emission and hole capture in Ge/Si quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 80:5 (2004),  367–371
  47. Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy

    Pis'ma v Zh. Èksper. Teoret. Fiz., 79:7 (2004),  411–415
  48. Hopping photoconduction and its long-time kinetics in a heterosystem with Ge quantum dots in Si

    Pis'ma v Zh. Èksper. Teoret. Fiz., 78:9 (2003),  1077–1081
  49. Many-electron Coulomb correlations in hopping transport along layers of quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 78:4 (2003),  276–280
  50. Phononless hopping conduction in two-dimensional layers of quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003),  445–449
  51. Barrier height and tunneling current in Schottky diodes with embedded layers of quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 75:2 (2002),  113–117
  52. Self-organization of an ensemble of Ge nanoclusters upon pulsed irradiation with low-energy ions during heteroepitaxy on Si

    Pis'ma v Zh. Èksper. Teoret. Fiz., 74:5 (2001),  296–299
  53. Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 73:10 (2001),  598–600
  54. Quantum dot Ge/Si heterostructures

    UFN, 171:12 (2001),  1371–1373
  55. ЭПР мелких доноров в квантовых ямах: водородоподобная модель

    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  923–927
  56. DYNAMICS OF RECRYSTALLIZATION OF SILICON FILM ON DIELECTRIC LAYER UNDER NANOSECOND LASER EFFECT

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:10 (1991),  58–63
  57. Центры спин-зависимой рекомбинации в структурах, формируемых имплантацией ионов азота в Si

    Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1101–1103
  58. CHARACTERISTICS OF MONOCRYSTAL SUBSTRATE FUSION IN INOCULATION WINDOWS DURING SILICON LAYER FORMATIONS ON THE INSULATOR BY PULSE HEATING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:22 (1990),  11–17
  59. Hopping conduction in intermediately doped semiconductors

    Fizika Tverdogo Tela, 30:2 (1988),  401–406
  60. Междоузельный дефект низкой симметрии в кремнии, облученном нейтронами

    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1057–1061
  61. Накопление и отжиг радиационных дефектов в кремнии в зависимости от температуры при облучении нейтронами

    Fizika i Tekhnika Poluprovodnikov, 22:5 (1988),  887–892
  62. DETERMINATION OF FUSION TEMPERATURE OF AMORPHOUS-SEMICONDUCTORS ON KINETICS OF SELF-SUPPORTING CRYSTALLIZATION

    Zhurnal Tekhnicheskoi Fiziki, 57:12 (1987),  2397–2400
  63. Distribution of Ion-Implanted Impurity in Silicon after Multiple Pulsed Electronic Annealling

    Fizika i Tekhnika Poluprovodnikov, 21:2 (1987),  357–360
  64. Vacancy–Impurity Defect with Spatially Selected Components in Silicon Irradiated by Electrons

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  50–56
  65. Crystalline-amorphous phase transition in heavily doped silicon

    Fizika Tverdogo Tela, 28:10 (1986),  3134–3136
  66. LIQUID-PHASE CRYSTALLIZATION OF AMORPHOUS-SILICON LAYERS DURING PULSED HEATING OF THE DIFFERENT WIDTH

    Zhurnal Tekhnicheskoi Fiziki, 56:4 (1986),  807–810
  67. Nonreoriented Divacancies in Silicon Irradiated by Neutrons

    Fizika i Tekhnika Poluprovodnikov, 19:11 (1985),  1944–1948
  68. Low-Temperature Conduction of Heavily Doped Amorphous Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1240–1244
  69. ЭПР дефектов в Si$\langle$Al$\rangle$, облученном большими дозами электронов

    Fizika i Tekhnika Poluprovodnikov, 18:10 (1984),  1763–1766
  70. Перестройка дефектов при больших дозах облучения Si электронами

    Fizika i Tekhnika Poluprovodnikov, 17:3 (1983),  546–548
  71. Спектральная излучательная способность пирографита в инфракрасной области при высоких температурах

    TVT, 17:5 (1979),  988–991
  72. Спектральный коэффициент поглощения кварцевых стекол в области их полупрозрачности при высоких температурах

    TVT, 17:1 (1979),  58–62
  73. Экспериментальное исследование спектральной излучательной способности кварцевого стекла при высоких температурах

    TVT, 16:4 (1978),  749–754
  74. Температурная зависимость спектральной излучательной способности кварцевых стекол марки КИ и КСГ в ИК-области (№ 706–78 Деп. от 6 III 1978)

    TVT, 16:3 (1978),  665

  75. Андрей Георгиевич Забродский, к 75-летию со дня рождения

    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  893–894
  76. Леонид Степанович Смирнов к 80-летию со дня рождения (1932–2011)

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  861–863
  77. Игорь Георгиевич Неизвестный (к 80-летию со дня рождения)

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  286–287

© Steklov Math. Inst. of RAS, 2026