Bloshkin Aleksey Aleksandrovich

Publications in Math-Net.Ru

1. Improving the efficiency of photodetector structures based on Ge/Si quantum dots by photonic crystal modes in the mid-infrared range
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  235–241
2. Photoelectric properties of structures with GeSiSn|Ge multiple quantum wells and relaxed GeSiSn layers
   
   Fizika Tverdogo Tela, 66:11 (2024),  1871–1878
3. Photocurrent enhancement in silicon photodiodes with Ge quantum dots by hybrid plasmonic and dielectric modes of a planar waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  386–392
4. Increase in the photocurrent in layers of Ge/Si quantum dots by modes of a two-dimensional photonic crystal
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 113:8 (2021),  501–506
5. Effect of adhesive layers on photocurrent enhancement in near-infrared quantum-dot photodetectors coupled with metal-nanodisk arrays
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  596–601
6. Plasmonic field enhancement by metallic subwave lattices on silicon in the near-infrared range
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 110:6 (2019),  393–399
7. Plasmon enhancement of the electric field in mid-infrared Ge/Si quantum-dot photodetectors with different thicknesses of the active region
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  206–210
8. Valence-band offsets in strained SiGeSn/Si layers with different tin contents
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  342–347
9. Suppression of hole relaxation in small-sized Ge/Si quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 102:9 (2015),  678–682
10. Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 101:11 (2015),  846–850
11. On the process of hole trapping in Ge/Si heterostructures with Ge quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1065–1069
12. Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 92:1 (2010),  43–46
13. Excitons in Ge/Si double quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:8 (2009),  621–625
14. Binding of electron states in multilayer strained Ge/Si heterostructures with type-II quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 83:4 (2006),  189–194
15. Phononless hopping conduction in two-dimensional layers of quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003),  445–449