Yakimov Andrei Innokent'evich

Publications in Math-Net.Ru

1. Improving the efficiency of photodetector structures based on Ge/Si quantum dots by photonic crystal modes in the mid-infrared range
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  235–241
2. Photocurrent enhancement in silicon photodiodes with Ge quantum dots by hybrid plasmonic and dielectric modes of a planar waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  386–392
3. Manifestation of “slow” light in the photocurrent spectra of Ge/Si quantum dot layers combined with a photonic crystal
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 118:4 (2023),  240–244
4. Increase in the photocurrent in layers of Ge/Si quantum dots by modes of a two-dimensional photonic crystal
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 113:8 (2021),  501–506
5. Effect of adhesive layers on photocurrent enhancement in near-infrared quantum-dot photodetectors coupled with metal-nanodisk arrays
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  596–601
6. Plasmonic field enhancement by metallic subwave lattices on silicon in the near-infrared range
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 110:6 (2019),  393–399
7. Plasmon enhancement of the electric field in mid-infrared Ge/Si quantum-dot photodetectors with different thicknesses of the active region
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  206–210
8. Localization of surface plasmon waves in hybrid photodetectors with subwavelength metallic arrays
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 108:6 (2018),  399–403
9. Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 105:7 (2017),  419–423
10. Valence-band offsets in strained SiGeSn/Si layers with different tin contents
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  342–347
11. Enhancement of the hole photocurrent in layers of Ge/Si quantum dots with abrupt heterointerfaces
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:7 (2016),  507–511
12. Suppression of hole relaxation in small-sized Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 102:9 (2015),  678–682
13. Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 101:11 (2015),  846–850
14. Bidirectional photocurrent of holes in layers of Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:2 (2014),  99–103
15. On the process of hole trapping in Ge/Si heterostructures with Ge quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1065–1069
16. Intraband optical transitions of holes in strained SiGe quantum wells
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:3 (2013),  180–184
17. Electronic structure of double Ge quantum dots in Si
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 96:1 (2012),  77–86
18. Photoinduced and equilibrium optical absorption in Ge/Si quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1566–1570
19. Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:10 (2011),  806–810
20. Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 92:1 (2010),  43–46
21. Excitons in Ge/Si double quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:8 (2009),  621–625
22. Bonding state of a hole in Ge/Si double quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 86:7 (2007),  549–552
23. Hole states in artificial molecules formed by vertically coupled Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 85:9 (2007),  527–532
24. Binding of electron states in multilayer strained Ge/Si heterostructures with type-II quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 83:4 (2006),  189–194
25. The Meyer – Neldel rule in the processes of thermal emission and hole capture in Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 80:5 (2004),  367–371
26. Hopping photoconduction and its long-time kinetics in a heterosystem with Ge quantum dots in Si
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 78:9 (2003),  1077–1081
27. Many-electron Coulomb correlations in hopping transport along layers of quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 78:4 (2003),  276–280
28. Phononless hopping conduction in two-dimensional layers of quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003),  445–449
29. Barrier height and tunneling current in Schottky diodes with embedded layers of quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 75:2 (2002),  113–117
30. Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 73:10 (2001),  598–600
31. Quantum dot Ge/Si heterostructures
    
    UFN, 171:12 (2001),  1371–1373
32. Hopping conduction in intermediately doped semiconductors
    
    Fizika Tverdogo Tela, 30:2 (1988),  401–406