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Zegrya Georgii Georgievich

Publications in Math-Net.Ru

  1. Increased fibroblast stiffness as a result of pharmacological activation of mechanosensitive Piezo1 ion channels

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:2 (2026),  42–46
  2. Auger-recombination mechanisms in semiconductor nanoheterostructures. Part 2. Quantum wires and quantum dots (a review)

    Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  573–600
  3. Auger-recombination mechanisms in semiconductor nanoheterostructures. Part 1. Quantum wells

    Fizika i Tekhnika Poluprovodnikov, 59:9 (2025),  540–561
  4. Combustion rate and response time of porous silicon-based ignition compositions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:7 (2025),  43–45
  5. Pecyliarities of initiation by high-current electron beam of energy composites based on porous silicon with niobium boride and graphene additives

    Zhurnal Tekhnicheskoi Fiziki, 94:1 (2024),  119–124
  6. Competition between isotropic and strongly anisotropic terms in the impact ionization rate of narrow- and middle-gap cubic semiconductors

    Fizika i Tekhnika Poluprovodnikov, 58:11 (2024),  620–628
  7. Limiting thickness of pore walls formed in processes of anode etching of heavily doped semiconductors

    Zhurnal Tekhnicheskoi Fiziki, 93:2 (2023),  281–285
  8. Optical and electron-beam initiation of porous silicon films with different contents of oxidizer and graphene

    Zhurnal Tekhnicheskoi Fiziki, 92:11 (2022),  1699–1704
  9. Comparative analysis of the efficiency of electroluminescence in type I and II heterostructures based on narrow-gap À$^{\mathrm{III}}$B$^{\mathrm{V}}$ compounds

    Fizika i Tekhnika Poluprovodnikov, 56:5 (2022),  479–485
  10. Combustion rate of powdered porous silicon with limited space

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  7–10
  11. Piezoelectric properties of porous silicon

    Pis'ma v Zh. Èksper. Teoret. Fiz., 114:10 (2021),  680–684
  12. Laser effect in the explosion of porous silicon

    Pis'ma v Zh. Èksper. Teoret. Fiz., 114:4 (2021),  263–268
  13. Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions

    Zhurnal Tekhnicheskoi Fiziki, 91:2 (2021),  367
  14. Energy spectrum of electrons of deep impurity centers in wide-bandgap mesoscopic semiconductors

    Pis'ma v Zh. Èksper. Teoret. Fiz., 112:12 (2020),  807–812
  15. Laser initiation of energy-saturated composites based on nanoporous silicon

    Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1708–1714
  16. Mechanosensitivity of nanoporous silicon-based binary mixtures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  48–51
  17. Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers

    Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1592–1597
  18. Effect of conductivity type and doping level of silicon crystals on the size of formed pore channels during anodic etching in hydrofluoric acid solutions

    Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1575–1584
  19. The possibilities of energy-saturated nanoporous silicon-based composites (review and new results)

    Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019),  397–403
  20. The mechanism of singlet oxygen generation on the surface of excited nanoporous silicon

    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1485–1496
  21. Carrier lifetime in semiconductors with band-gap widths close to the spin-orbit splitting energies

    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  450–455
  22. On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method

    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  273–276
  23. The effect of the doping level of starting silicon single crystals on structural parameters of porous silicon produced by electrochemical etching

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  3–6
  24. The effect of shungite additives on electric discharge in ammonium perchlorate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  44–46
  25. Intraband radiation absorption by free holes in GaAs/InGaAs quantum wells with taking into account non-sphericity of $kP$ hamiltonian

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:10 (2019),  9–12
  26. Intraband radiation absorption by holes in InAsSb/AlSb and InGaAsP/InP quantum wells

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  207–220
  27. The mechanism of generation of singlet oxygen in the presence of excited nanoporous silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:11 (2018),  53–62
  28. Impact ionization rate in direct gap semiconductors

    Pis'ma v Zh. Èksper. Teoret. Fiz., 105:9 (2017),  554–558
  29. Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1196–1201
  30. Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments

    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  501–506
  31. Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  57–63
  32. Features of high-temperature electroluminescence in an LED $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb heterostructure with high potential barriers

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  794–800
  33. Role of acoustoelectric interaction in the formation of nanoscale periodic structures of adsorbed atoms

    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  318–323
  34. Temperature dependence of the carrier lifetime in narrow-gap Cd$_x$Hg$_{1-x}$Te solid solutions: Radiative recombination

    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1206–1211
  35. Effect of nonparabolicity of the electron and light-hole energy spectrum on the optical properties of heterostructures with deep AlSb/InAs$_{0.86}$Sb$_{0.14}$/AlSb quantum wells

    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  617–627
  36. Temperature dependence of the carrier lifetime in Cd$_x$Hg$_{1-x}$Te narrow-gap solid solutions with consideration for Auger processes

    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  444–448
  37. Optical properties of heterostructures with deep AlSb/InAs$_{0.84}$Sb$_{0.16}$/AlSb quantum wells

    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1217–1227
  38. The influence of the nonparabolic energy spectrum of charge carriers on the optical characteristics of AlSb/InAs$_{0.84}$Sb$_{0.16}$/AlSb heterostructures with deep quantum wells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:20 (2014),  1–8
  39. The role of exchange interaction in nonradiative energy transfer between semiconductor quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:8 (2014),  64–69
  40. The role of electron-electron interaction in the process of charge-carrier capture in deep quantum wells

    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1347–1355
  41. On the lifetime of charge carriers in quantum dots at low temperatures

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  24–29
  42. A quantum cascade laser in a transverse magnetic field. A model of the open triple-barrier active region

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:11 (2013),  52–62
  43. Resonance coulomb trapping of electrons in a deep quantum well

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:5 (2013),  54–60
  44. Nonradiative resonance energy transfer between two semiconductor quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:1 (2013),  39–46
  45. Heisenberg–Dirac–van Vleck vector model for a 1D antiferromagnetic chain of localized spins $S$ = 1

    Zhurnal Tekhnicheskoi Fiziki, 82:2 (2012),  10–16
  46. Optical transitions in Cd$_x$Hg$_{1-x}$Te-based quantum wells and their analysis with account for the actual band structure of the material

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  792–797
  47. Radiative recombination of hot carriers in narrow-gap semiconductors

    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  32–37
  48. Pure spin currents generation under quantum wells photoionization

    Pis'ma v Zh. Èksper. Teoret. Fiz., 92:1 (2010),  40–42
  49. Calculating potential and electron density for strained semiconductor quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:24 (2010),  1–8
  50. Cyclotron resonance in the InAs/GaSb heterostructure in an inclined magnetic field

    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:4 (2002),  258–262
  51. New mechanism of current-induced cooling of quantum systems

    Pis'ma v Zh. Èksper. Teoret. Fiz., 74:6 (2001),  346–351
  52. Long wavelength shift of the gain edge in semiconductor heterolasers

    Fizika Tverdogo Tela, 34:4 (1992),  1224–1230
  53. Nature of threshold current-density temperature dependence for long-wavelenght lasers based on InAsSbP/InAs and InAsSbP/InAsSb double heterostructures

    Fizika i Tekhnika Poluprovodnikov, 26:2 (1992),  246–256
  54. Thermomagnetic generation of alternative current at convective instability with feedback

    Fizika Tverdogo Tela, 26:10 (1984),  2980–2984

  55. Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  476
  56. Quasi-stationary electron states in a multilayered structure in longitudinal electric and transverse magnetic fields

    Fizika Tverdogo Tela, 55:10 (2013),  2067–2073
  57. Lev Emmanuilovich Gurevich (Obituary)

    UFN, 161:6 (1991),  207–209

© Steklov Math. Inst. of RAS, 2026