Yablonskii Artem Nikolaevich

Publications in Math-Net.Ru

1. Modeling of transport and emission characteristics of light-emitting lateral silicon $p^+$–$i$–$n^+$ transistor with self-assembled Ge(Si) nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  242–249
2. Retranslation of luminescence excitation during cascade transitions in hybrid nanostructures based on INP/INASP/INP NWs and CDSE/ZNS-TOPO QDs
   
   Optics and Spectroscopy, 131:10 (2023),  1403–1411
3. Effect of optical excitation conditions on the spectral and temporal characteristics of the radiation from two-dimensional photonic crystals with Ge(Si) nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  251–258
4. Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  12–15
5. Luminescent response of photonic crystals with embedded Ge nanoislands with different hole etching depths
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:10 (2023),  29–32
6. Photoluminescence of strained germanium microbridges at various temperatures: experiment and modeling
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  954–960
7. Radiative properties of up-conversion coatings formed on the basis of erbium-doped barium titanate xerogels
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  713–718
8. Formation and optical properties of locally strained Ge microstructures embedded into cavities
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  420–426
9. Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1150–1157
10. Enhancement of the luminescence signal from self-assembled Ge(Si) nanoislands due to interaction with the modes of two-dimensional photonic crystals
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  822–829
11. Influence of the growth conditions and doping level on the luminescence kinetics of Ge:Sb layers grown on silicon
    
    Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  685–690
12. Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  129–137
13. Emission properties of heavily doped epitaxial indium-nitride layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1395–1400
14. Ordered arrays of Ge(Si) quantum dots embedded in two-dimensional photonic crystals
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1366–1371
15. Locally strained Ge/SOI structures with improved heat sink as an active media for silicon optoelectronics
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1360–1365
16. Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1354–1359
17. Formation and properties of locally tensile strained Ge microstructures for silicon photonics
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1331–1336
18. Study of the structural and emission properties of Ge(Si) quantum dots ordered on the Si(001) surface
    
    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1028–1033
19. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
20. On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  695–698
21. On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1629–1633
22. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1455–1458
23. Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1458–1462
24. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  15–20
25. Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1509–1512
26. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  621–625
27. Guiding effect of quantum wells in semiconductor lasers
    
    Kvantovaya Elektronika, 43:5 (2013),  401–406
28. Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1435–1439
29. Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1402–1407
30. Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1398–1401
31. Photoluminescence excitation spectroscopy technique modified for studying structures with self-assembled Ge(Si)/Si(001) nanoislands
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:18 (2012),  7–15
32. Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  202–206
33. Special features of the excitation spectra and kinetics of photoluminescence of the Si$_{1-x}$Ge$_x$:Er/Si structures with relaxed heterolayers
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1527–1532
34. Kinetics of terahertz photoconductivity in $p$-Ge under impurity breakdown conditions
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1523–1526
35. Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1519–1522
36. Photoconductivity of InAs/GaAs structures with InAs nanoclusters in the near-infrared region
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1511–1513
37. GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 $\mu$m
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  422–429
38. Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  346–351
39. Stimulated-emission wavelength switching in optically pumped InGaAs/AlGaInAs laser heterostructures
    
    Kvantovaya Elektronika, 39:3 (2009),  247–250
40. Tunable source of terahertz radiation based on the difference-frequency generation in a GaP crystal
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008),  905–907
41. Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002),  425–429