Kudryavtsev Konstantin Evgen'evich

Publications in Math-Net.Ru

1. Ultrafast luminescence kinetics and localization effects of nonequilibrium carriers in degenerate $n$-InGaN layers
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:8 (2025),  688–695
2. Photoinduced band-gap renormalization in degenerate narrow-gap $n$-InGaN epitaxial films
   
   Fizika i Tekhnika Poluprovodnikov, 59:9 (2025),  563–570
3. Formation of planar structures with InGaN layers for red wavelength light sources
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  406–413
4. Resonant auger recombination in HgTe/CdHgTe quantum wells for mid infrared lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:16 (2025),  35–38
5. Influence of the ratio of group III and V fluxes on the structural, emissive properties properties and stimulated emission of planar structures with InGaN layers in the IR range
   
   Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  220–225
6. Features of formation of In$_x$Ga$_{1-x}$N bulk layers in the immiscibility gap of solid solutions ($x$ $\sim$ 0.6) by molecular beam epitaxy with plasma nitrogen activation
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  444–450
7. Photoluminescence of strained germanium microbridges at various temperatures: experiment and modeling
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  954–960
8. Formation of heterostructures with multiple quantum wells InN/InGaN by the PA-MBE method on sapphire
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  848–854
9. PA MBE growth of intermediate-composition InGaN layers for red and near-IR laser sources
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  700–704
10. Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  766–772
11. Investigation of stimulated emission from HgTe/CdHgTe quantum-well heterostructures in the 3–5 $\mu$m atmospheric transparency window
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1163–1168
12. Investigation into microwave absorption in semiconductors for frequency-multiplication devices and radiation-output control of continuous and pulsed gyrotrons
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  878–883
13. Stimulated emission at a wavelength of $2.86 \mu$m from In(Sb, As)/In(Ga, Al)As/GaAs metamorphic quantum wells under optical pumping
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 110:5 (2019),  297–302
14. Submonolayer InGaAs/GaAs quantum dots grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1159–1163
15. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
16. Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1384–1389
17. Formation and properties of locally tensile strained Ge microstructures for silicon photonics
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1331–1336
18. Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  509
19. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
20. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
21. Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1530–1533
22. Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1679–1684
23. Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  596–599
24. Hodographs in diode-structure diagnostics
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1492–1496
25. Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in $p$-Si:B
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  192–195
26. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  175–178
27. The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  72–78
28. Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  913–918
29. Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  900–903
30. Specific features of the nonradiative relaxation of Er$^{3+}$ ions in epitaxial Si structures
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1626–1631
31. Features of impurity photoconductivity in Si:Er/Si epitaxial diodes
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1513–1516
32. Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1486–1488
33. Relaxation kinetics of impurity photoconductivity in $p$-Si:B with various levels of doping and degrees of compensation in high electric fields
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1472–1475
34. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  621–625
35. Guiding effect of quantum wells in semiconductor lasers
    
    Kvantovaya Elektronika, 43:5 (2013),  401–406
36. Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1448–1452
37. Features of impurity-photoconductivity relaxation in boron-doped silicon
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1414–1418
38. Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  230–234
39. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  132–135
40. Electroluminescence at a wavelength of 1.5 $\mu$m in Si:Er/Si diode structures doped with Al, Ga, and B acceptors
    
    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1645–1648
41. Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes $p^+/n^+/n$-Si:Er
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1533–1538
42. Tunable source of terahertz radiation based on the difference-frequency generation in a GaP crystal
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008),  905–907