RUS  ENG
Full version
PEOPLE

Krasil'nik Zakharii Fishelevich

Publications in Math-Net.Ru

  1. Ultrafast luminescence kinetics and localization effects of nonequilibrium carriers in degenerate $n$-InGaN layers

    Pis'ma v Zh. Èksper. Teoret. Fiz., 121:8 (2025),  688–695
  2. Photoinduced band-gap renormalization in degenerate narrow-gap $n$-InGaN epitaxial films

    Fizika i Tekhnika Poluprovodnikov, 59:9 (2025),  563–570
  3. Formation of planar structures with InGaN layers for red wavelength light sources

    Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  406–413
  4. Influence of the ratio of group III and V fluxes on the structural, emissive properties properties and stimulated emission of planar structures with InGaN layers in the IR range

    Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  220–225
  5. Isotopically purified Si/SiGe epitaxial structures for quantum computing

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:10 (2024),  22–25
  6. Features of formation of In$_x$Ga$_{1-x}$N bulk layers in the immiscibility gap of solid solutions ($x$ $\sim$ 0.6) by molecular beam epitaxy with plasma nitrogen activation

    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  444–450
  7. Formation of heterostructures with multiple quantum wells InN/InGaN by the PA-MBE method on sapphire

    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  848–854
  8. PA MBE growth of intermediate-composition InGaN layers for red and near-IR laser sources

    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  700–704
  9. Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  766–772
  10. Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1150–1157
  11. Enhancement of the luminescence signal from self-assembled Ge(Si) nanoislands due to interaction with the modes of two-dimensional photonic crystals

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  822–829
  12. Emission properties of heavily doped epitaxial indium-nitride layers

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1395–1400
  13. Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1354–1359
  14. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
  15. Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1384–1389
  16. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
  17. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
  18. Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1530–1533
  19. On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  695–698
  20. The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1720–1724
  21. Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1685–1689
  22. Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1497–1500
  23. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1455–1458
  24. Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1270–1275
  25. On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1133–1137
  26. Multifunction setup for the measurement of resonant optical responses of semiconductor structures in the visible and IR spectral ranges with subpicosecond time resolution

    Zhurnal Tekhnicheskoi Fiziki, 85:3 (2015),  124–128
  27. Hodographs in diode-structure diagnostics

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1492–1496
  28. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1129–1135
  29. Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  105–110
  30. Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers

    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  913–918
  31. Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate

    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  900–903
  32. Specific features of the nonradiative relaxation of Er$^{3+}$ ions in epitaxial Si structures

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1626–1631
  33. Si$_{1-x}$Ge$_x$/Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  417–420
  34. Features of impurity photoconductivity in Si:Er/Si epitaxial diodes

    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1513–1516
  35. Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms

    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  410–413
  36. Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers

    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  404–409
  37. Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands

    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1448–1452
  38. Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping

    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1435–1439
  39. Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation

    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1398–1401
  40. Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure

    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  940–943
  41. Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si$_{1-x}$Ge$_x$ buffer layers

    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  665–672
  42. Natural fluctuations in tunneling-current distribution over the area of a reverse-biased silicon $p$–$n$ junction

    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  134–139
  43. Near-field mechanism of photoluminescence excitation in quantum well heterostructures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:11 (2011),  890–894
  44. Optical detection of an electric field in a GaAs/AlGaAs $n{-}i{-}n$ heterostructure with double quantum wells

    Pis'ma v Zh. Èksper. Teoret. Fiz., 93:7 (2011),  437–441
  45. Electroluminescence at a wavelength of 1.54 $\mu$m in Si:Er/Si structures consisting of a number of $p$–$n$ junctions

    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1486–1488
  46. Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  230–234
  47. Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  202–206
  48. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  132–135
  49. Electroluminescence at a wavelength of 1.5 $\mu$m in Si:Er/Si diode structures doped with Al, Ga, and B acceptors

    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1645–1648
  50. Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes $p^+/n^+/n$-Si:Er

    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1533–1538
  51. Special features of the excitation spectra and kinetics of photoluminescence of the Si$_{1-x}$Ge$_x$:Er/Si structures with relaxed heterolayers

    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1527–1532
  52. Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures

    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1519–1522
  53. Sublimation molecular beam epitaxy of silicon-based structures

    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  413–417
  54. Si:Er/Si diode structures for observing room-temperature electroluminescence at a wavelength of 1.54 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  402–408
  55. Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures

    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  346–351
  56. Tunable source of terahertz radiation based on the difference-frequency generation in a GaP crystal

    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008),  905–907
  57. Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005),  614–617
  58. Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands

    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002),  425–429
  59. Optical properties of strained Si1–xGex and Si1–x–yGexCy heterostructures

    UFN, 170:3 (2000),  338–341
  60. Теоретическое и экспериментальное исследование ВАХ и ГАХ горячих дырок кремния

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1315–1323
  61. Индуцированное циклотронное излучение тяжелых дырок в одноосно деформированном германии

    Fizika i Tekhnika Poluprovodnikov, 25:4 (1991),  718–722
  62. Циклотронный резонанс дырок германия с отрицательными массами при ${H}\not\parallel[001]$

    Fizika i Tekhnika Poluprovodnikov, 24:5 (1990),  825–828
  63. Моделирование явлений переноса горячих дырок кремния

    Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  585–591
  64. Циклотронный резонанс горячих дырок германия

    Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1233–1238
  65. Межподзонные оптические переходы горячих дырок в одноосно деформированном германии

    Fizika i Tekhnika Poluprovodnikov, 22:3 (1988),  479–484
  66. Отрицательные массы и отрицательная проводимость на циклотронном резонансе в полупроводниках $p$-типа группы A$^{\text{III}}$B$^{\text{V}}$

    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  101–104
  67. Magnetic Traps of Hot Holes in Silicon

    Fizika i Tekhnika Poluprovodnikov, 21:3 (1987),  484–488
  68. Spectral composition of maser emission on the cyclotron-resonance of heavy holes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:10 (1987),  634–637
  69. Luminescence of Germanium Hot Holes in Submillimeter Wavelength Range

    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  369–377
  70. Nonlinear Cyclotron Resonance of Heavy Holes in Germanium in Streaming in $\mathbf{ E}\parallel\mathbf{H}$ Fields

    Fizika i Tekhnika Poluprovodnikov, 18:5 (1984),  944–946

  71. Vladimir Vladilenovich Kocharovsky (on his 70th birthday)

    UFN, 195:11 (2025),  1247–1248
  72. In memory of Robert Arnol'dovich Suris

    UFN, 194:6 (2024),  677–678
  73. Андрей Георгиевич Забродский, к 75-летию со дня рождения

    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  893–894
  74. К 80-летию со дня рождения Владимира Алексеевича Сабликова

    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  481
  75. In memory of Nikolai Nikolaevich Sibeldin

    UFN, 191:3 (2021),  333–334

© Steklov Math. Inst. of RAS, 2026