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Dubinov Aleksandr Alekseevich

Publications in Math-Net.Ru

  1. Коллимирующая оптическая система из полиметилпентена для квантово-каскадного лазера терагерцевого диапазона

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  44–47
  2. Terahertz quantum cascade laser in a quantizing magnetic field

    Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  433–438
  3. THz quantum cascade lasers in magnetic fields

    Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  196–201
  4. Generation of long-wavelength stimulated emission in HgCdTe quantum wells with an increased Auger recombination threshold

    Pis'ma v Zh. Èksper. Teoret. Fiz., 118:5 (2023),  311–316
  5. Optical losses of a waveguide with superconducting plates in terahertz quantum cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  706–709
  6. Two-frequency stimulated emission in Hg(Cd)Te/CdHgTe heterostructure

    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  421–425
  7. Optimization of the single quantum well CdHgTe/HgTe heterostructure parameters for the plasmon-phonons generation

    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  237–242
  8. Recombination in gapless HgTe/CdHgTe quantum well heterostructure

    Fizika Tverdogo Tela, 64:2 (2022),  173–178
  9. Optimization of a stripe laser waveguide based on an HgCdTe heterostructure for single-mode generation of far-IR radiation

    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  855–857
  10. Influence of quantum well parameters on the spectrum of two-dimensional plasmons in HgTe/CdHgTe heterostructures

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  973–977
  11. Effect of internal optical losses on the generation of mid-IR stimulated emission in waveguide heterostructures with HgCdTe/CdHgTe quantum wells

    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  922–926
  12. Model of a terahertz quantum-cascade laser based on a two-dimensional plasmon

    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  869–871
  13. Calculation of the efficiency of doubling the radiation of a sub-THz gyrotron dueto lattice nonlinearity in a single crystal InP plate

    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  855–860
  14. Generation of terahertz radiation in InP : Fe crystals due to second-order lattice nonlinearity

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  813–817
  15. Dielectric waveguide optimization for the laser structures with HgTe/CdHgTe QWs emitting in far-infrared range

    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  455–459
  16. THz laser generation on a hybrid surface plasmon in a HgCdTe-based structure

    Kvantovaya Elektronika, 51:2 (2021),  158–163
  17. Continuous-wave stimulated emission in the 10–14-$\mu$m range under optical excitation in HgCdTe/CdHgTe structures with quasirelativistic dispersion

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1169–1173
  18. Investigation of stimulated emission from HgTe/CdHgTe quantum-well heterostructures in the 3–5 $\mu$m atmospheric transparency window

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1163–1168
  19. Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  929–932
  20. Investigation into microwave absorption in semiconductors for frequency-multiplication devices and radiation-output control of continuous and pulsed gyrotrons

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  878–883
  21. Analysis of phonon modes and electron–phonon interaction in quantum-cascade laser heterostructures

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  780–784
  22. GaAs-based laser diode with InGaAs waveguide quantum wells

    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1718–1720
  23. Second-harmonic generation of subterahertz gyrotron radiation by frequency doubling in InP : Fe and its application for magnetospectroscopy of semiconductor structures

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1244–1249
  24. Study of the auger recombination energy threshold in a series of waveguide heterostructures with HgTe/Cd$_{0.7}$Hg$_{0.3}$Te QWs near 14 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1178–1181
  25. Submonolayer InGaAs/GaAs quantum dots grown by MOCVD

    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1159–1163
  26. Balance-equation method for simulating terahertz quantum-cascade lasers using a wave-function basis with reduced dipole moments of tunnel-coupled states

    Kvantovaya Elektronika, 49:10 (2019),  913–918
  27. Generation of THz radiation at a difference frequency in a HgCdTe-based laser

    Kvantovaya Elektronika, 49:7 (2019),  689–692
  28. Effect of Cd content in barriers on the threshold energy of Auger recombination in waveguide structures with HgTe/CdxHg1-xTe quantum wells, emitting at a wavelength of 18 μm

    Kvantovaya Elektronika, 49:6 (2019),  556–558
  29. Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1460–1463
  30. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
  31. Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1384–1389
  32. Lowering the lasing threshold by doping in mid-infrared lasers based on HgCdTe with HgTe quantum wells

    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1100–1103
  33. Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  464
  34. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
  35. Mode loss spectra in THz quantum-cascade lasers with gold- and silver-based double metal waveguides

    Kvantovaya Elektronika, 48:11 (2018),  1005–1008
  36. Power characteristics of lasers with quantum-well waveguides and blocking layers

    Kvantovaya Elektronika, 48:4 (2018),  390–394
  37. Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1616–1620
  38. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
  39. Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1530–1533
  40. Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1410–1413
  41. On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  695–698
  42. Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1679–1684
  43. Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1509–1512
  44. Germanium laser with a hybrid surface plasmon mode

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1469–1472
  45. Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  596–599
  46. Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1619–1622
  47. On a semiconductor laser with a $p$–$n$ tunnel junction with radiation emission through the substrate

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1489–1491
  48. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  175–178
  49. The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  72–78
  50. Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  105–110
  51. Nonlinear harmonic mixing in an InGaAs/InGaP/GaAs laser on a germanium substrate

    Kvantovaya Elektronika, 45:3 (2015),  204–206
  52. Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate

    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  900–903
  53. Efficiency of vertical emission from a semiconductor laser waveguide with a diffraction grating

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  94–99
  54. Substrate-emitting semiconductor laser with a trapezoidal active region

    Kvantovaya Elektronika, 44:4 (2014),  286–288
  55. Role of auger recombination in the determination of the threshold current density of a green-wavelength laser

    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:5 (2013),  283–286
  56. Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1486–1488
  57. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  621–625
  58. Guiding effect of quantum wells in semiconductor lasers

    Kvantovaya Elektronika, 43:5 (2013),  401–406
  59. Study of lifetimes and photoconductivity relaxation in heterostructures with Hg$_x$Cd$_{1-x}$Te/Cd$_y$Hg$_{1-y}$Te quantum wells

    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1388–1392
  60. Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure

    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  940–943
  61. Mode structure in the far field radiation of a leaky-wave multiple quantum well laser

    Kvantovaya Elektronika, 42:10 (2012),  931–933
  62. Anomalous characteristics of lasers with a large number of quantum wells

    Zhurnal Tekhnicheskoi Fiziki, 81:7 (2011),  149–151
  63. Simultaneous TE$_1$ and TE$_2$ mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  652–656
  64. Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern

    Kvantovaya Elektronika, 40:10 (2010),  855–857
  65. Terahertz laser based on optically pumped graphene: model and feasibility of realization

    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009),  70–74
  66. Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser

    Kvantovaya Elektronika, 39:8 (2009),  727–730
  67. Tunable source of terahertz radiation based on the difference-frequency generation in a GaP crystal

    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008),  905–907
  68. Generation of difference-frequency radiation in the far- and mid-IR ranges in a two-chip laser based on gallium arsenide on a germanium substrate

    Kvantovaya Elektronika, 38:9 (2008),  855–858
  69. Generation of difference-frequency radiation in mid- and far-IR ranges by using subpicosecond and picosecond semiconductor lasers

    Kvantovaya Elektronika, 38:2 (2008),  149–153

© Steklov Math. Inst. of RAS, 2026