Sedova Irina Vladimirovna

Publications in Math-Net.Ru

1. Оптическая спектроскопия метаморфных гетероструктур с квантовыми точками InAs/InGaAs, излучающими в диапазоне $\sim$ 1.55 мкм
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 123:1 (2026),  3–12
2. Charge states of single quantum dots in a microcavity $p-n-p$ heterostructure with the built-in Coulomb blockade
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:5 (2025),  386–392
3. Single-photon emission in the telecom C-band in a micropillar cavity with an InAs/InGaAs quantum dot
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:3 (2025),  189–193
4. Metamorphic InAs/InGaAs quantum dot heterostructures for single-photon generation in the C-band spectral range
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:1 (2025),  37–43
5. Molecular-beam epitaxy of metamorphic InAs/InGaAs quantum-dot heterostructures emitting in the telecom wavelength range
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 120:9 (2024),  694–700
6. Evolution of the native oxide composition on Al$_{0.3}$Ga$_{0.7}$As(100)
   
   Fizika i Tekhnika Poluprovodnikov, 58:11 (2024),  636–643
7. Passivation of AlGaAs(100) surfaces with ammonium sulfide solutions
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  302–312
8. Luminescence in $p$–$i$–$n$ structures with compensated quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  663–673
9. Change in structure and luminescent properties of ZnSe and ZnCdSe films irradiated by electron beam
   
   Fizika Tverdogo Tela, 64:2 (2022),  228–236
10. Photoconductivity and infrared-light absorption in $p$-GaAs/AlGaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  629–636
11. Investigation of built-in electric fields at the GaSe/GaAs interface by photoreflectance spectroscopy
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1011–1017
12. Highly efficient semiconductor emitter of single photons in the red spectral range
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019),  147–151
13. Molecular-beam epitaxy of two-dimensional gase layers on GaAs(001) and GaAs(112) substrates: structural and optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1152–1158
14. Development of the physicochemical properties of the GaSb(100) surface in ammonium sulfide solutions
    
    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  908–916
15. Single-photon emitter at 80 K based on a dielectric nanoantenna with a CdSe/ZnSe quantum dot
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 108:3 (2018),  201–205
16. Nanoheterostructures with CdTe/Zn(Mg)(Se)Te quantum dots for single-photon emitters grown by molecular beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018),  94–102
17. Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100)
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1138–1145
18. Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  56–62
19. Photoreflectance of indium antimonide
    
    Fizika Tverdogo Tela, 58:12 (2016),  2307–2313
20. Resonance energy transfer in a dense array of II–VI quantum dots
    
    Fizika Tverdogo Tela, 58:11 (2016),  2175–2179
21. Isolated quantum emitters originating from defect centers in a ZnSe/ZnMgSSe heterostructure
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016),  108–113
22. Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1726
23. Heterostructures with CdTe/ZnTe quantum dots for single photon emitters grown by molecular beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:24 (2016),  64–71
24. Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016),  40–48
25. Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1024–1030
26. Optical studies of carriers’ vertical transport in the alternately-strained ZnS$_{0.4}$Se$_{0.6}$/CdSe superlattice
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  364–369
27. Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  342–348
28. Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  36–43
29. Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  32–35
30. Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  710–716
31. Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow–green spectral region
    
    Kvantovaya Elektronika, 43:5 (2013),  418–422
32. Spin injection in GaAs/GaSb quantum-well heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  205–209
33. Magnetooptics of (Zn,Cd,Mn)Te/ZnTe heterostructures with a small discontinuity in the valence band potential
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008),  922–926
34. Evidence for Mn$^{2+}$ fine structure in CdMnSe/ZnSe quantum dots caused by their low dimensionality
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:9 (2008),  724–728
35. Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers
    
    Kvantovaya Elektronika, 38:12 (2008),  1097–1100
36. Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers
    
    Kvantovaya Elektronika, 34:10 (2004),  909–911