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Publications in Math-Net.Ru
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Photosensitivity of a metal-insulator-semiconductor field-effect transistor based on PbSnTe:In film with a composition close to the bands inversion
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023), 22–25
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MIS transistor based on PbSnTe : In film with an Al$_2$O$_3$ gate dielectric
Fizika i Tekhnika Poluprovodnikov, 56:2 (2022), 243–249
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Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties
Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1122–1128
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Sign-alternating photoconductivity in PbSnTe : In films in the space-charge-limited current regime
Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 796–800
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Modification of the surface properties of PbSnTe$\langle$In$\rangle$ epitaxial layers with composition near band inversion
Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1795–1799
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Surface ñonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion
Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1207–1211
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Effect of the surface on transport phenomena in PbSnTe : In/BaF$_{2}$ films
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1569–1573
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Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 $\mu$m
Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1713–1719
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Formation of the GaAs-Ge heterointerface in the presence of oxide
Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009), 94–97
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Effect of an electron beam on CaF2 and BaF2 epitaxial layers on Si
Pis'ma v Zh. Èksper. Teoret. Fiz., 88:6 (2008), 421–425
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Charge accumulation in Ge quantum dots in a GaAs/ZnSe/QD-Ge/ZnSe/Ge floating gate transistor structure
Pis'ma v Zh. Èksper. Teoret. Fiz., 78:12 (2003), 1289–1292
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Electric and photoelectric properties of GaAs/ZnSe–Ge/ZnSe/Al structures with Ge quantum dots
Pis'ma v Zh. Èksper. Teoret. Fiz., 78:3 (2003), 184–187
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Raman $E$ , $E_1+\Delta_1$ resonance in unstrained germanium quantum dots
Pis'ma v Zh. Èksper. Teoret. Fiz., 73:6 (2001), 336–340
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