RUS  ENG
Full version
PEOPLE

Aleshkin Vladimir Yakovlevich

Publications in Math-Net.Ru

  1. Magnetoresistance of a HgTe/CdHgTe double quantum well in an in-plane magnetic field

    Pis'ma v Zh. Èksper. Teoret. Fiz., 118:12 (2023),  896–901
  2. Simultaneous observation of the cyclotron resonances of electrons and holes in a HgTe/CdHgTe double quantum well under “optical gate” effect

    Pis'ma v Zh. Èksper. Teoret. Fiz., 118:11 (2023),  860–868
  3. Energy spectrum of the valence band in HgTe quantum wells on the way from a two- to three-dimensional topological insulator

    Pis'ma v Zh. Èksper. Teoret. Fiz., 117:12 (2023),  912–918
  4. Temperature quenching of the terahertz photoluminescence of shallow acceptors in HgCdTe ternary alloy

    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  432–437
  5. Optimization of the single quantum well CdHgTe/HgTe heterostructure parameters for the plasmon-phonons generation

    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  237–242
  6. Recombination in gapless HgTe/CdHgTe quantum well heterostructure

    Fizika Tverdogo Tela, 64:2 (2022),  173–178
  7. Features of magnetotransport in a $\mathrm{HgTe/CdHgTe}$ double quantum well with an intermediate degree of band inversion

    Pis'ma v Zh. Èksper. Teoret. Fiz., 116:6 (2022),  378–386
  8. The effect of optical phonons on the quenching of photoluminescence of mercury vacancies in narrow-band solid solutions of CdHgTe with increasing temperature

    Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1060–1065
  9. Photoluminescence of strained germanium microbridges at various temperatures: experiment and modeling

    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  954–960
  10. Influence of quantum well parameters on the spectrum of two-dimensional plasmons in HgTe/CdHgTe heterostructures

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  973–977
  11. Model of a terahertz quantum-cascade laser based on a two-dimensional plasmon

    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  869–871
  12. Express characterization of the HgCdTe/CdHgTe quantum well waveguide heterostructures with the quasi-relativistic carrier dispersion law by room-temperature photoluminescence spectroscopy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021),  51–54
  13. THz laser generation on a hybrid surface plasmon in a HgCdTe-based structure

    Kvantovaya Elektronika, 51:2 (2021),  158–163
  14. Effects of the electron–electron interaction in the magneto-absorption spectra of HgTe/CdHgTe quantum wells with an inverted band structure

    Pis'ma v Zh. Èksper. Teoret. Fiz., 112:8 (2020),  541–546
  15. Continuous-wave stimulated emission in the 10–14-$\mu$m range under optical excitation in HgCdTe/CdHgTe structures with quasirelativistic dispersion

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1169–1173
  16. Investigation of stimulated emission from HgTe/CdHgTe quantum-well heterostructures in the 3–5 $\mu$m atmospheric transparency window

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1163–1168
  17. Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  929–932
  18. Investigation into microwave absorption in semiconductors for frequency-multiplication devices and radiation-output control of continuous and pulsed gyrotrons

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  878–883
  19. Magnetoabsorption in HgCdTe/CdHgTe Quantum Wells in Tilted Magnetic Fields

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019),  184–190
  20. Study of the auger recombination energy threshold in a series of waveguide heterostructures with HgTe/Cd$_{0.7}$Hg$_{0.3}$Te QWs near 14 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1178–1181
  21. Submonolayer InGaAs/GaAs quantum dots grown by MOCVD

    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1159–1163
  22. Generation of THz radiation at a difference frequency in a HgCdTe-based laser

    Kvantovaya Elektronika, 49:7 (2019),  689–692
  23. Effect of Cd content in barriers on the threshold energy of Auger recombination in waveguide structures with HgTe/CdxHg1-xTe quantum wells, emitting at a wavelength of 18 μm

    Kvantovaya Elektronika, 49:6 (2019),  556–558
  24. Polarization-sensitive Fourier-transform Spectroscopy of HgTe/CdHgTe quantum wells in the far infrared range in a magnetic field

    Pis'ma v Zh. Èksper. Teoret. Fiz., 108:5 (2018),  352–358
  25. Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1460–1463
  26. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
  27. Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1384–1389
  28. Magnetooptics of HgTe/CdTe quantum wells with giant rashba splitting in magnetic fields up to 34 T

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1274–1279
  29. Effect of features of the band spectrum on the characteristics of stimulated emission in narrow-gap heterostructures with HgCdTe quantum wells

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1263–1267
  30. Lowering the lasing threshold by doping in mid-infrared lasers based on HgCdTe with HgTe quantum wells

    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1100–1103
  31. Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  464
  32. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
  33. Power characteristics of lasers with quantum-well waveguides and blocking layers

    Kvantovaya Elektronika, 48:4 (2018),  390–394
  34. Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1621–1629
  35. On the band spectrum in $p$-type HgTe/CdHgTe heterostructures and its transformation under temperature variation

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1588–1593
  36. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
  37. Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1530–1533
  38. On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1498–1502
  39. Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1410–1413
  40. On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  695–698
  41. The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1720–1724
  42. Magnetospectroscopy of double HgTe/CdHgTe quantum wells

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1554–1560
  43. Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1509–1512
  44. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1455–1458
  45. Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  596–599
  46. Variation of the emission frequency of a terahertz quantum cascade laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:5 (2016),  15–23
  47. Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1619–1622
  48. On a semiconductor laser with a $p$–$n$ tunnel junction with radiation emission through the substrate

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1489–1491
  49. On the cascade capture of electrons at donors in GaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1233–1237
  50. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  175–178
  51. Observation of dynamics of impurity photoconductivity in $n$-GaAs caused by electron cooling

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  117–121
  52. The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  72–78
  53. Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  105–110
  54. Nonlinear harmonic mixing in an InGaAs/InGaP/GaAs laser on a germanium substrate

    Kvantovaya Elektronika, 45:3 (2015),  204–206
  55. Temporal dynamics of impurity photoconductivity in $n$-GaAs and $n$-InP

    Fizika Tverdogo Tela, 56:5 (2014),  883–887
  56. Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate

    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  900–903
  57. Near-field effect in the absorption spectrum of impurities in crystals

    Pis'ma v Zh. Èksper. Teoret. Fiz., 99:12 (2014),  824–826
  58. Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range

    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1499–1502
  59. Efficiency of vertical emission from a semiconductor laser waveguide with a diffraction grating

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  94–99
  60. Experimental determination of the optimum number of quantum wells in multiwell heterolasers with radiation leakage into a substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:10 (2014),  52–57
  61. Substrate-emitting semiconductor laser with a trapezoidal active region

    Kvantovaya Elektronika, 44:4 (2014),  286–288
  62. Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0–1.2 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1517–1520
  63. Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1486–1488
  64. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  621–625
  65. Resonance Coulomb scattering at shallow donors in AlGaAs/$n$-GaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  466–472
  66. Efficiency of GaInAs/GaAs quantum-well lasers upon inhomogeneous excitation of quantum wells

    Kvantovaya Elektronika, 43:11 (2013),  999–1002
  67. Guiding effect of quantum wells in semiconductor lasers

    Kvantovaya Elektronika, 43:5 (2013),  401–406
  68. Study of lifetimes and photoconductivity relaxation in heterostructures with Hg$_x$Cd$_{1-x}$Te/Cd$_y$Hg$_{1-y}$Te quantum wells

    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1388–1392
  69. Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure

    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  940–943
  70. Mode structure in the far field radiation of a leaky-wave multiple quantum well laser

    Kvantovaya Elektronika, 42:10 (2012),  931–933
  71. Polarization dependence of Fano resonances in impurity photoconductivity of quantum wells doped with shallow donors

    Fizika Tverdogo Tela, 53:6 (2011),  1188–1197
  72. Theory of the Fano resonance in impurity excitation spectra of $p$-GaAs

    Fizika Tverdogo Tela, 53:6 (2011),  1112–1120
  73. Near-field mechanism of photoluminescence excitation in quantum well heterostructures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:11 (2011),  890–894
  74. Optical detection of an electric field in a GaAs/AlGaAs $n{-}i{-}n$ heterostructure with double quantum wells

    Pis'ma v Zh. Èksper. Teoret. Fiz., 93:7 (2011),  437–441
  75. Anomalous characteristics of lasers with a large number of quantum wells

    Zhurnal Tekhnicheskoi Fiziki, 81:7 (2011),  149–151
  76. Simultaneous TE$_1$ and TE$_2$ mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  652–656
  77. Терагерцовая спектроскопия узкозонных гетероструктур с квантовыми ямами на основе HgTe/CdTe

    Pis'ma v Zh. Èksper. Teoret. Fiz., 92:11 (2010),  837–841
  78. Terahertz emission and photoconductivity in $n$-type GaAs/AlGaAs quantum wells: the role of resonant impurity states

    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1443–1446
  79. Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern

    Kvantovaya Elektronika, 40:10 (2010),  855–857
  80. Terahertz laser based on optically pumped graphene: model and feasibility of realization

    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009),  70–74
  81. Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser

    Kvantovaya Elektronika, 39:8 (2009),  727–730
  82. Tunable source of terahertz radiation based on the difference-frequency generation in a GaP crystal

    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008),  905–907
  83. Impurity photoconductivity in strained p -InGaAs/GaAsP heterostructures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:3 (2008),  229–233
  84. Generation of difference-frequency radiation in the far- and mid-IR ranges in a two-chip laser based on gallium arsenide on a germanium substrate

    Kvantovaya Elektronika, 38:9 (2008),  855–858
  85. Generation of difference-frequency radiation in mid- and far-IR ranges by using subpicosecond and picosecond semiconductor lasers

    Kvantovaya Elektronika, 38:2 (2008),  149–153
  86. Photoelectron effects in GaAs layers with quantum heteropit built-in on the surface

    Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1886–1893
  87. Photoliminescence in $\delta$-doped by carbon superlattices in gallium arsenide

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1848–1849
  88. Intersubb and absorption of IR radiation in In$_{x}$Ga$_{1-x}$As$-$GaAs stressed structures with quantum wells

    Fizika i Tekhnika Poluprovodnikov, 26:3 (1992),  516–521
  89. Temperature dependence of binding energy of Wanier–Mott excitons in potential wells

    Fizika i Tekhnika Poluprovodnikov, 26:2 (1992),  318–323
  90. Исследование квантовых ям $C{-}V$-методом

    Fizika i Tekhnika Poluprovodnikov, 25:6 (1991),  1047–1052
  91. Фотоэлектрические свойства эпитаксиальных гетероструктур GaAs/InGaAs с квантовой ямой

    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2172–2176
  92. Фотолюминесценция квантовых слоев In$_{x}$Ga$_{1-x}$As, выращенных на плоскостях (100) и (111)A арсенида галлия

    Fizika i Tekhnika Poluprovodnikov, 24:5 (1990),  892–896
  93. Инверсные распределения электронов в полупроводниковых гетероструктурах с одной квантовой ямой

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  131–135
  94. Структура распределения горячих дырок германия в условиях стриминга

    Fizika i Tekhnika Poluprovodnikov, 22:11 (1988),  1910–1914
  95. Effect of Scattering Anisotropy on Hole Distribution in Ge and Si under Streaming

    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1733–1736
  96. Inversion of Band Populations in Thin Semiconductor Layers Produced by an Alternating Electric Field

    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1582–1587
  97. Dynamics of Holes in Semiconductors of Diamond Structure in a Constant Electric Field

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  281–286
  98. Туннельная проводимость тонких полупроводниковых пленок

    Fizika i Tekhnika Poluprovodnikov, 18:12 (1984),  2182–2186
  99. Nonlinear Electric Conductivity of Monopolar Semiconductor Films with Anisotropis Mobility

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  197–199

© Steklov Math. Inst. of RAS, 2026