Zvonkov Boris Nikolaevich

Publications in Math-Net.Ru

1. Formation of vertical graphene on surface of the gallium-arsenide structures
   
   Fizika Tverdogo Tela, 65:4 (2023),  669–675
2. MOCVD growth of InGaAs metamorphic heterostructures for photodiodes with low dark current
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  495–500
3. Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer
   
   Fizika Tverdogo Tela, 63:9 (2021),  1245–1252
4. Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type
   
   Fizika Tverdogo Tela, 63:7 (2021),  866–873
5. Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer
   
   Fizika Tverdogo Tela, 63:3 (2021),  346–355
6. Methods for switching radiation polarization in GaAs laser diodes
   
   Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1409–1414
7. Diode heterostructures with a ferromagnetic (Ga, Mn)As layer
   
   Fizika Tverdogo Tela, 62:3 (2020),  373–380
8. The use of films of multilayer graphene as coatings of light-emitting GaAs structures
   
   Optics and Spectroscopy, 128:3 (2020),  399–406
9. Pulsed laser irradiation of GaAs-based light-emitting structures
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1336–1343
10. Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  868–872
11. Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  801–806
12. Phase separation in (Ga,Mn)As layers obtained by ion implantation and subsequent laser annealing
    
    Fizika Tverdogo Tela, 61:3 (2019),  465–471
13. GaAs-based laser diode with InGaAs waveguide quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1718–1720
14. On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1233–1236
15. Studying magnetic diodes with a GaMnAs layer formed by pulsed laser deposition
    
    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  351–358
16. Enhancing the circular polarization of spin light-emitting diodes by processing in selenium vapor
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019),  52–55
17. Phase separation in GaMnAs layers grown by laser pulsed deposition
    
    Fizika Tverdogo Tela, 60:5 (2018),  940–946
18. Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1460–1463
19. The effect of the composition of a carrier gas during the growth of a Mn delta-layer on the electrical and magnetic properties of GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1286–1290
20. Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  873–880
21. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
22. Power characteristics of lasers with quantum-well waveguides and blocking layers
    
    Kvantovaya Elektronika, 48:4 (2018),  390–394
23. Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer
    
    Fizika Tverdogo Tela, 59:11 (2017),  2196–2199
24. Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing
    
    Fizika Tverdogo Tela, 59:11 (2017),  2130–2134
25. Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1510–1513
26. Features of the selective manganese doping of GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1468–1472
27. Optical thyristor based on GaAs/InGaP materials
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1443–1446
28. Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1410–1413
29. Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  75–78
30. Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1576–1582
31. Study of the structures of cleaved cross sections by Raman spectroscopy
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1561–1564
32. Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer $\delta$-doped with Mn
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1490–1496
33. Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1463–1468
34. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1455–1458
35. Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  596–599
36. Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1619–1622
37. On a semiconductor laser with a $p$–$n$ tunnel junction with radiation emission through the substrate
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1489–1491
38. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1478–1483
39. Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  370–375
40. Exchange enhancement of the electron $g$ factor in strained InGaAs/InP heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  196–203
41. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  175–178
42. Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  112–116
43. Raman spectroscopy of InGaAs/GaAs nanoheterostructures $\delta$-doped with Mn
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  102–106
44. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  11–14
45. Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  3–5
46. The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  72–78
47. Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  105–110
48. Nonlinear harmonic mixing in an InGaAs/InGaP/GaAs laser on a germanium substrate
    
    Kvantovaya Elektronika, 45:3 (2015),  204–206
49. Epitaxial growth of MnGa/GaAs layers for diodes with spin injection
    
    Fizika Tverdogo Tela, 56:10 (2014),  2062–2065
50. Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction
    
    Zhurnal Tekhnicheskoi Fiziki, 84:12 (2014),  102–106
51. Far-infrared radiation from $n$-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  643–647
52. The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:20 (2014),  96–103
53. Experimental determination of the optimum number of quantum wells in multiwell heterolasers with radiation leakage into a substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:10 (2014),  52–57
54. Substrate-emitting semiconductor laser with a trapezoidal active region
    
    Kvantovaya Elektronika, 44:4 (2014),  286–288
55. Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn $\delta$ layer
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1617–1620
56. Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1609–1612
57. Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0–1.2 $\mu$m
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1517–1520
58. Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1497–1503
59. Tunneling effects in tilted magnetic fields in $n$-InGaAs/GaAs structures with strongly coupled double quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1457–1461
60. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1231–1235
61. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  621–625
62. Guiding effect of quantum wells in semiconductor lasers
    
    Kvantovaya Elektronika, 43:5 (2013),  401–406
63. Long-term decay of photoconductivity in $n$-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1609–1612
64. Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1527–1531
65. Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1510–1514
66. Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1402–1407
67. Transport properties of InGaAs/GaAs Heterostructures with $\delta$-doped quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  649–654
68. Mode structure in the far field radiation of a leaky-wave multiple quantum well laser
    
    Kvantovaya Elektronika, 42:10 (2012),  931–933
69. Simultaneous TE$_1$ and TE$_2$ mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  652–656
70. Beatings of Shubnikov-de Haas oscillations in a two-dimensional hole system in an InGaAs quantum well
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 91:6 (2010),  312–317
71. Lateral transport and far-infrared radiation of electrons in In$_x$Ga$_{1-x}$As/GaAs heterostructures with the double tunnel-coupled quantum wells in a high electric field
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1543–1546
72. Control of emission wavelength for InGaAs/GaAs quantum wells and laser structures on their basis by means of proton irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1494–1497
73. Controlling the wavelength of InGaAs/GaAs/InGaP lasers by ion implantation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:4 (2010),  81–87
74. Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern
    
    Kvantovaya Elektronika, 40:10 (2010),  855–857
75. Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:10 (2009),  730–735
76. Impurity photoconductivity in strained p -InGaAs/GaAsP heterostructures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:3 (2008),  229–233
77. Magnetic properties of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs}/\mathrm{In}_x\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs}$ quantum wells
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 87:3 (2008),  192–198
78. Anomalous hall effect in Mn $\delta$-doped GaAs/In$_{0.17}$Ga$_{0.83}$As/GaAs quantum wells with high hole mobility
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 85:1 (2007),  32–39
79. Tunable wide-aperture semiconductor laser with an external waveguide – grating mirror
    
    Kvantovaya Elektronika, 31:1 (2001),  35–38
80. Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm
    
    Kvantovaya Elektronika, 26:3 (1999),  217–218
81. Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate
    
    Kvantovaya Elektronika, 25:7 (1998),  622–624
82. Semiconductor lasers with tunnel-coupled waveguides emitting at the wavelength of 980 nm
    
    Kvantovaya Elektronika, 24:2 (1997),  123–126
83. Lasers emitting at a wavelength of 0.98 μm, constructed from InGaP/GaAs heterostructures grown by MOCVD method
    
    Kvantovaya Elektronika, 21:10 (1994),  921–924
84. Photoelectron effects in GaAs layers with quantum heteropit built-in on the surface
    
    Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1886–1893
85. Photoliminescence in $\delta$-doped by carbon superlattices in gallium arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1848–1849
86. Intersubb and absorption of IR radiation in In$_{x}$Ga$_{1-x}$As$-$GaAs stressed structures with quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 26:3 (1992),  516–521