RUS  ENG
Full version
PEOPLE

Vikhrova Ol'ga Viktorovna

Publications in Math-Net.Ru

  1. Formation of ferromagnetic semiconductor GaMnAs by ion implantation: comparison of different types of annealing

    Fizika Tverdogo Tela, 66:10 (2024),  1686–1698
  2. Galvanomagnetic properties of GaMnAs layers obtained by ion implantation: the role of Mn$^+$ ion energy

    Fizika Tverdogo Tela, 66:6 (2024),  871–876
  3. Ferromagnetic GaMnAs layers obtained by implantation of manganese ions followed by pulsed laser annealing

    Fizika Tverdogo Tela, 65:12 (2023),  2230–2238
  4. Creation of GaMnAs ferromagnetic semiconductor by combined laser method

    Fizika Tverdogo Tela, 65:5 (2023),  754–761
  5. Formation of vertical graphene on surface of the gallium-arsenide structures

    Fizika Tverdogo Tela, 65:4 (2023),  669–675
  6. Fabrication and study of the properties of GaAs layers doped with bismuth

    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  399–405
  7. Effect of growth temperature on the physicochemical properties of low-temperature GaAs layers fabricated by pulsed laser deposition

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:4 (2023),  11–14
  8. Formation of skyrmion states in ion-irradiated CoPt thin films

    Fizika Tverdogo Tela, 64:9 (2022),  1304–1310
  9. Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer

    Fizika Tverdogo Tela, 63:9 (2021),  1245–1252
  10. Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type

    Fizika Tverdogo Tela, 63:7 (2021),  866–873
  11. Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer

    Fizika Tverdogo Tela, 63:3 (2021),  346–355
  12. Effect of ion irradiation on the magnetic properties of CoPt films

    Fizika Tverdogo Tela, 63:3 (2021),  324–332
  13. Methods for switching radiation polarization in GaAs laser diodes

    Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1409–1414
  14. Doping of carbon layers grown by the pulsed laser technique

    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  637–643
  15. Diode heterostructures with a ferromagnetic (Ga, Mn)As layer

    Fizika Tverdogo Tela, 62:3 (2020),  373–380
  16. The use of films of multilayer graphene as coatings of light-emitting GaAs structures

    Optics and Spectroscopy, 128:3 (2020),  399–406
  17. Pulsed laser irradiation of GaAs-based light-emitting structures

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1336–1343
  18. Time-resolved photoluminescence in heterostructures with InGaAs:Cr/GaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1139–1144
  19. Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  868–872
  20. Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  801–806
  21. Modifying the magnetic properties of the CoPt alloy by ion irradiation

    Fizika Tverdogo Tela, 61:9 (2019),  1694–1699
  22. Micromagnetic and magneto-optical properties of ferromagnetic/heavy metal thin film structures

    Fizika Tverdogo Tela, 61:9 (2019),  1628–1633
  23. Formation of magnetic nanostructures using an atomic force microscope probe

    Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019),  1807–1812
  24. On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1233–1236
  25. Studying magnetic diodes with a GaMnAs layer formed by pulsed laser deposition

    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  351–358
  26. Detectors of circularly polarized radiation based on semiconductor heterostructures with a CoPt Schottky barrier

    Fizika Tverdogo Tela, 60:11 (2018),  2236–2239
  27. Formation of a domain structure in multilayer CoPt films by magnetic probe of an atomic force microscope

    Fizika Tverdogo Tela, 60:11 (2018),  2158–2165
  28. The study of features of formation and properties of À$^{3}$Â$^{5}$ semiconductors highly doped with iron

    Fizika Tverdogo Tela, 60:11 (2018),  2137–2140
  29. Phase separation in GaMnAs layers grown by laser pulsed deposition

    Fizika Tverdogo Tela, 60:5 (2018),  940–946
  30. The effect of the composition of a carrier gas during the growth of a Mn delta-layer on the electrical and magnetic properties of GaAs structures

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1286–1290
  31. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
  32. Photoconductive detector of circularly polarized radiation based on a MIS structure with a CoPt layer

    Fizika Tverdogo Tela, 59:11 (2017),  2203–2205
  33. Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature

    Fizika Tverdogo Tela, 59:11 (2017),  2200–2202
  34. Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer

    Fizika Tverdogo Tela, 59:11 (2017),  2196–2199
  35. Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing

    Fizika Tverdogo Tela, 59:11 (2017),  2130–2134
  36. Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1510–1513
  37. Features of the selective manganese doping of GaAs structures

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1468–1472
  38. Optical thyristor based on GaAs/InGaP materials

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1443–1446
  39. Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1410–1413
  40. Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate

    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  75–78
  41. Properties of CoPt ferromagnetic layers for application in spin light-emitting diodes

    Fizika Tverdogo Tela, 58:11 (2016),  2186–2189
  42. Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing

    Fizika Tverdogo Tela, 58:11 (2016),  2140–2144
  43. Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1615–1619
  44. Study of the structures of cleaved cross sections by Raman spectroscopy

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1561–1564
  45. Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer $\delta$-doped with Mn

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1490–1496
  46. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1455–1458
  47. Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  596–599
  48. GaAs structures with a gate dielectric based on aluminum-oxide layers

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  204–207
  49. Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn $\delta$ layer

    Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  3–8
  50. CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1649–1653
  51. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1478–1483
  52. Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons

    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  370–375
  53. Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  112–116
  54. Raman spectroscopy of InGaAs/GaAs nanoheterostructures $\delta$-doped with Mn

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  102–106
  55. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  11–14
  56. Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  3–5
  57. The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:20 (2014),  96–103
  58. Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots

    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1609–1612
  59. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1231–1235
  60. Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity

    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1527–1531
  61. Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods

    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1402–1407
  62. Beatings of Shubnikov-de Haas oscillations in a two-dimensional hole system in an InGaAs quantum well

    Pis'ma v Zh. Èksper. Teoret. Fiz., 91:6 (2010),  312–317
  63. Control of emission wavelength for InGaAs/GaAs quantum wells and laser structures on their basis by means of proton irradiation

    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1494–1497
  64. Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors

    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1447–1450
  65. Anisotropic magnetoresistance and planar hall effect in GaAs structure with Mn-delta-doped layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  46–53
  66. Controlling the wavelength of InGaAs/GaAs/InGaP lasers by ion implantation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:4 (2010),  81–87
  67. Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well

    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:10 (2009),  730–735
  68. Magnetic properties of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs}/\mathrm{In}_x\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs}$ quantum wells

    Pis'ma v Zh. Èksper. Teoret. Fiz., 87:3 (2008),  192–198
  69. Anomalous hall effect in Mn $\delta$-doped GaAs/In$_{0.17}$Ga$_{0.83}$As/GaAs quantum wells with high hole mobility

    Pis'ma v Zh. Èksper. Teoret. Fiz., 85:1 (2007),  32–39

© Steklov Math. Inst. of RAS, 2026