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Publications in Math-Net.Ru
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Memristive properties of Cu/(Co$_{40}$Fe$_{40}$B$_{20}$)$_x$(SiO$_2$)$_{100-x}$/ZrO$_2$(Y)/Cr/Cu/Cr capacitor structures
Fizika Tverdogo Tela, 67:5 (2025), 817–822
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Scaling of anomalous Hall effect as a method to determine percolation threshold and metal–insulator transition in magnetic nanocomposites with intergranular interaction
UFN, 195:6 (2025), 658–668
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Adapted MLP-Mixer network based on crossbar arrays of fast and multilevel switching $(\mathrm{Co}-\mathrm{Fe}-\mathrm{B})_x(\mathrm{LiNbO}_3)_{100-x}$ nanocomposite memristors
Nanoscale Horiz., 9 (2024), 238–247
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Structural and electronic properties of composite memristors based on the LiNbO$_3$ matrix with different nanogranules: Co–Fe–B and CoFe
Fizika Tverdogo Tela, 65:9 (2023), 1602–1610
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Features of the scaling of the anomalous Hall effect in (CoFeB)$_x$(LiNbO$_3)_{100-x}$ nanocomposite films below the percolation threshold: manifestation of the cotunneling Hall conductance?
Pis'ma v Zh. Èksper. Teoret. Fiz., 118:7 (2023), 519–525
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Anomalous behavior of the tunneling magnetoresistance in (CoFeB)$_x$(LiNbO$_3$)$_{100-x}$/Si nanocomposite film structures below the percolation threshold: manifestations of the cotunneling and exchange effects
Pis'ma v Zh. Èksper. Teoret. Fiz., 118:1 (2023), 46–54
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Multilevel memristor structures based on $a$-Si with enhanced resistive switching stability and low compliance currents
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023), 39–42
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Percolation effect impact on resistive switching of structures based on nanocomposite (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_3$)$_{100-x}$
Fizika Tverdogo Tela, 64:11 (2022), 1690–1694
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Influence of oxygen and water vapor on the structural transformations in nanogranular (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ composites
Fizika Tverdogo Tela, 63:11 (2021), 1837–1843
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Influence of substrate crystal structure on the magnetic anisotropy of Mn$_{x}$Si$_{1-x}$ ($x\approx0.5$) films
Fizika Tverdogo Tela, 63:10 (2021), 1527–1531
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The effect of oxygen and water vapor on the electric properties of (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ nanogranular composites
Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021), 1393–1402
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Frequency-coded control of the conductance of memristors based on nanoscale layers of LiNbO$_3$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ composite in trained spiking neural networks
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 3–7
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Memristors based on nanoscale layers LiNbO$_{3}$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$
Fizika Tverdogo Tela, 62:9 (2020), 1562–1565
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Second-order nanoscale thermal effects in memristive structures based on poly-$p$-xylylene
Pis'ma v Zh. Èksper. Teoret. Fiz., 112:6 (2020), 379–386
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Effect of slow ion relaxation at ferromagnetic resonance in a CoFeB–LiNbO metal-insulator nanocomposite
Pis'ma v Zh. Èksper. Teoret. Fiz., 112:2 (2020), 88–92
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The properties of memristive structures based on (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$, nanocomposites synthesized on SiO$_{2}$/Si substrates
Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 257–263
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Conductance quantization in memristive structures based on poly-p-xylylene
Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 913–917
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Memristors based on poly($p$-xylylene) with embedded silver nanoparticles
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 25–28
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Effects of monopolar resistive switching in thin diamond-like carbon layers
Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019), 170–173
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Poly-para-xylylene-based memristors on flexible substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 40–43
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Adaptive properties of spiking neuromorphic networks with synapses based on memristive elements
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019), 19–23
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Effect of laser fluence on magnetic properties of thin Mn$_{x}$Si$_{1-x}$ ($x\approx$ 0.5) films prepared by pulsed laser deposition
Fizika Tverdogo Tela, 60:11 (2018), 2147–2151
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Modification of the ferromagnetic properties of Si$_{1-x}$Mn$_{x}$ thin films synthesized by pulsed laser deposition with a variation in the buffer-gas pressure
Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1313–1316
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A precise algorithm of memristor switching to a state with preset resistance
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018), 20–28
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Effects of electron drag of gold in pores of anodic aluminum oxide: Reversible resistive switching in a chain of point contacts
Pis'ma v Zh. Èksper. Teoret. Fiz., 106:6 (2017), 387–391
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Logarithmic temperature dependence of electrical resistivity of (Co$_{41}$Fe$_{39}$B$_{20}$)$_{x}$(Al–O)$_{100-x}$ nanocomposites
Fizika Tverdogo Tela, 58:3 (2016), 433–435
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Anomalous Hall effect in polycrystalline Mn$_{x}$Si$_{1-x}$ ($x\approx0.5$) films with the self-organized distribution of crystallites over their shapes and sizes
Pis'ma v Zh. Èksper. Teoret. Fiz., 103:7 (2016), 539–546
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Properties of Zn$_{1-x}$Co$_x$O films produced by pulsed laser deposition with fast particle separation
Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 556–563
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Synthesis of spatially ordered ensemble of Co nanocylinders in porous alumina matrix on surface of GaAs structures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013), 17–24
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High-temperature ferromagnetism in Si$_{1-x}$ Mn$_x$ $(x\approx 0.5)$ nonstoichiometric alloys
Pis'ma v Zh. Èksper. Teoret. Fiz., 96:4 (2012), 272–280
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High-temperature ferromagnetism of Si$_{1-x}$Mn$_x$ films fabricated by laser deposition using the droplet velocity separation technique
Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1546–1553
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Anomalous Hall effect in highly Mn-Doped silicon films
Pis'ma v Zh. Èksper. Teoret. Fiz., 89:12 (2009), 707–712
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Magnetic properties of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs}/\mathrm{In}_x\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs}$ quantum wells
Pis'ma v Zh. Èksper. Teoret. Fiz., 87:3 (2008), 192–198
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Anomalous hall effect in Mn $\delta$-doped GaAs/In$_{0.17}$Ga$_{0.83}$As/GaAs quantum wells with high hole mobility
Pis'ma v Zh. Èksper. Teoret. Fiz., 85:1 (2007), 32–39
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Äèíàìè÷åñêèå âîëüò-àìïåðíûå õàðàêòåðèñòèêè ôîòî÷óâñòâèòåëüíûõ ñëîèñòûõ ñòðóêòóð íà îñíîâå ñèëüíî ëåãèðîâàííîãî Si$\langle\text{As}\rangle$ ñ áëîêèðîâàííîé ïðîâîäèìîñòüþ ïî ïðèìåñíîé çîíå
Fizika i Tekhnika Poluprovodnikov, 26:12 (1992), 2024–2030
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Determination of photoionization cross-section for doping impurities in semiconductors using Hall-effect measurements
Fizika i Tekhnika Poluprovodnikov, 26:6 (1992), 1096–1099
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