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Ryl'kov Vladimir Vasil'evich

Publications in Math-Net.Ru

  1. Memristive properties of Cu/(Co$_{40}$Fe$_{40}$B$_{20}$)$_x$(SiO$_2$)$_{100-x}$/ZrO$_2$(Y)/Cr/Cu/Cr capacitor structures

    Fizika Tverdogo Tela, 67:5 (2025),  817–822
  2. Scaling of anomalous Hall effect as a method to determine percolation threshold and metal–insulator transition in magnetic nanocomposites with intergranular interaction

    UFN, 195:6 (2025),  658–668
  3. Adapted MLP-Mixer network based on crossbar arrays of fast and multilevel switching $(\mathrm{Co}-\mathrm{Fe}-\mathrm{B})_x(\mathrm{LiNbO}_3)_{100-x}$ nanocomposite memristors

    Nanoscale Horiz., 9 (2024),  238–247
  4. Structural and electronic properties of composite memristors based on the LiNbO$_3$ matrix with different nanogranules: Co–Fe–B and CoFe

    Fizika Tverdogo Tela, 65:9 (2023),  1602–1610
  5. Features of the scaling of the anomalous Hall effect in (CoFeB)$_x$(LiNbO$_3)_{100-x}$ nanocomposite films below the percolation threshold: manifestation of the cotunneling Hall conductance?

    Pis'ma v Zh. Èksper. Teoret. Fiz., 118:7 (2023),  519–525
  6. Anomalous behavior of the tunneling magnetoresistance in (CoFeB)$_x$(LiNbO$_3$)$_{100-x}$/Si nanocomposite film structures below the percolation threshold: manifestations of the cotunneling and exchange effects

    Pis'ma v Zh. Èksper. Teoret. Fiz., 118:1 (2023),  46–54
  7. Multilevel memristor structures based on $a$-Si with enhanced resistive switching stability and low compliance currents

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  39–42
  8. Percolation effect impact on resistive switching of structures based on nanocomposite (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_3$)$_{100-x}$

    Fizika Tverdogo Tela, 64:11 (2022),  1690–1694
  9. Influence of oxygen and water vapor on the structural transformations in nanogranular (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ composites

    Fizika Tverdogo Tela, 63:11 (2021),  1837–1843
  10. Influence of substrate crystal structure on the magnetic anisotropy of Mn$_{x}$Si$_{1-x}$ ($x\approx0.5$) films

    Fizika Tverdogo Tela, 63:10 (2021),  1527–1531
  11. The effect of oxygen and water vapor on the electric properties of (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ nanogranular composites

    Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1393–1402
  12. Frequency-coded control of the conductance of memristors based on nanoscale layers of LiNbO$_3$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ composite in trained spiking neural networks

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  3–7
  13. Memristors based on nanoscale layers LiNbO$_{3}$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$

    Fizika Tverdogo Tela, 62:9 (2020),  1562–1565
  14. Second-order nanoscale thermal effects in memristive structures based on poly-$p$-xylylene

    Pis'ma v Zh. Èksper. Teoret. Fiz., 112:6 (2020),  379–386
  15. Effect of slow ion relaxation at ferromagnetic resonance in a CoFeB–LiNbO metal-insulator nanocomposite

    Pis'ma v Zh. Èksper. Teoret. Fiz., 112:2 (2020),  88–92
  16. The properties of memristive structures based on (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$, nanocomposites synthesized on SiO$_{2}$/Si substrates

    Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  257–263
  17. Conductance quantization in memristive structures based on poly-p-xylylene

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  913–917
  18. Memristors based on poly($p$-xylylene) with embedded silver nanoparticles

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  25–28
  19. Effects of monopolar resistive switching in thin diamond-like carbon layers

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019),  170–173
  20. Poly-para-xylylene-based memristors on flexible substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  40–43
  21. Adaptive properties of spiking neuromorphic networks with synapses based on memristive elements

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  19–23
  22. Effect of laser fluence on magnetic properties of thin Mn$_{x}$Si$_{1-x}$ ($x\approx$ 0.5) films prepared by pulsed laser deposition

    Fizika Tverdogo Tela, 60:11 (2018),  2147–2151
  23. Modification of the ferromagnetic properties of Si$_{1-x}$Mn$_{x}$ thin films synthesized by pulsed laser deposition with a variation in the buffer-gas pressure

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1313–1316
  24. A precise algorithm of memristor switching to a state with preset resistance

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018),  20–28
  25. Effects of electron drag of gold in pores of anodic aluminum oxide: Reversible resistive switching in a chain of point contacts

    Pis'ma v Zh. Èksper. Teoret. Fiz., 106:6 (2017),  387–391
  26. Logarithmic temperature dependence of electrical resistivity of (Co$_{41}$Fe$_{39}$B$_{20}$)$_{x}$(Al–O)$_{100-x}$ nanocomposites

    Fizika Tverdogo Tela, 58:3 (2016),  433–435
  27. Anomalous Hall effect in polycrystalline Mn$_{x}$Si$_{1-x}$ ($x\approx0.5$) films with the self-organized distribution of crystallites over their shapes and sizes

    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:7 (2016),  539–546
  28. Properties of Zn$_{1-x}$Co$_x$O films produced by pulsed laser deposition with fast particle separation

    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  556–563
  29. Synthesis of spatially ordered ensemble of Co nanocylinders in porous alumina matrix on surface of GaAs structures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  17–24
  30. High-temperature ferromagnetism in Si$_{1-x}$ Mn$_x$ $(x\approx 0.5)$ nonstoichiometric alloys

    Pis'ma v Zh. Èksper. Teoret. Fiz., 96:4 (2012),  272–280
  31. High-temperature ferromagnetism of Si$_{1-x}$Mn$_x$ films fabricated by laser deposition using the droplet velocity separation technique

    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1546–1553
  32. Anomalous Hall effect in highly Mn-Doped silicon films

    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:12 (2009),  707–712
  33. Magnetic properties of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs}/\mathrm{In}_x\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs}$ quantum wells

    Pis'ma v Zh. Èksper. Teoret. Fiz., 87:3 (2008),  192–198
  34. Anomalous hall effect in Mn $\delta$-doped GaAs/In$_{0.17}$Ga$_{0.83}$As/GaAs quantum wells with high hole mobility

    Pis'ma v Zh. Èksper. Teoret. Fiz., 85:1 (2007),  32–39
  35. Äèíàìè÷åñêèå âîëüò-àìïåðíûå õàðàêòåðèñòèêè ôîòî÷óâñòâèòåëüíûõ ñëîèñòûõ ñòðóêòóð íà îñíîâå ñèëüíî ëåãèðîâàííîãî Si$\langle\text{As}\rangle$ ñ áëîêèðîâàííîé ïðîâîäèìîñòüþ ïî ïðèìåñíîé çîíå

    Fizika i Tekhnika Poluprovodnikov, 26:12 (1992),  2024–2030
  36. Determination of photoionization cross-section for doping impurities in semiconductors using Hall-effect measurements

    Fizika i Tekhnika Poluprovodnikov, 26:6 (1992),  1096–1099


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