Timoshnev Sergei Nikolaevich

Publications in Math-Net.Ru

1. Electronic structure of the valence band of gallium nitride during sodium adsorption
   
   Fizika Tverdogo Tela, 67:4 (2025),  617–623
2. Core level spectroscopy during sodium atom adsorption on gold nanoparticle surfaces
   
   Fizika Tverdogo Tela, 66:9 (2024),  1477–1482
3. Studies of Al$_x$Ga$_{1-x}$N/AlN, nanosized columnar heterostructures grown on silicon substrates with various surface modifications
   
   Zhurnal Tekhnicheskoi Fiziki, 94:1 (2024),  138–150
4. Submonolayer sodium coverages on the surface of the gold film
   
   Fizika Tverdogo Tela, 65:9 (2023),  1482–1490
5. Sodium adsorption on the surface of thermally oxidized tungsten
   
   Fizika Tverdogo Tela, 64:6 (2022),  739–745
6. Changes in the electronic properties of the GaN/Si(111) surface under Li adsorption
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  961–965
7. Growth of thin-film AlGaN/GaN epitaxial heterostructures on hybrid substrates containing layers of silicon carbide and porous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  547–552
8. Synchrotron radiation photoemission study of the electronic structure of the ultrathin K/AlN interface
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  541
9. Electronic structure of ultrathin Cs/Bi$_2$Se$_3$ interfaces
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:24 (2022),  26–29
10. Effect of sodium atom adsorption on the electronic structure of a gold film
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:16 (2022),  43–46
11. Electronic structure of thermally oxidized tungsten
    
    Fizika Tverdogo Tela, 63:8 (2021),  1166–1171
12. Electronic structure of an ultrathin molybdenum oxide film
    
    Fizika Tverdogo Tela, 62:10 (2020),  1618–1626
13. Gold nanoparticles adsorbed on tungsten: effect of sodium atom deposition and heating
    
    Fizika Tverdogo Tela, 62:8 (2020),  1171–1178
14. Electronic structure of molybdenum oxide oxidized at different pressures
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1395
15. Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  491–503
16. Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  346–354
17. Aromatic-like carbon nanostructures created on the vicinal SiC surfaces
    
    Fizika Tverdogo Tela, 61:12 (2019),  2436
18. Photoemission studies of the electronic structure of GaN grown by plasma assisted molecular beam epitaxy
    
    Fizika Tverdogo Tela, 61:12 (2019),  2294–2297
19. Method for controlling the polarity of gallium nitride layers in epitaxial synthesis of GaN/AlN heterostructures on hybrid SiC/Si substrates
    
    Fizika Tverdogo Tela, 61:12 (2019),  2289–2293
20. Electronic structure of molybdenum oxidized in air
    
    Fizika Tverdogo Tela, 61:11 (2019),  2024–2029
21. On the specific features of the plasma-assisted mbe synthesis of $n^{+}$-GaN layers on GaN/$c$-Al$_{2}$O$_{3}$ templates
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1212–1217
22. Photoelectric properties of GaN layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates and SiC/Si(111) epitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  190–198
23. A new type of carbon nanostructure on a vicinal SiС(111)-8$^\circ$ surface
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019),  17–20
24. Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1425–1429
25. Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  524
26. The electronic structure of the Cs/$n$-GaN(0001) nano-interface
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018),  50–58
27. Precision calibration of the silicon doping level in gallium arsenide epitaxial layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  87–94
28. Induced surface states of the ultrathin Ва/3$C$-SiC(111) interface
    
    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  465–469
29. Photoemission studies of the vicinal SiC(100) 4$^\circ$ surface and the Cs/SiC(100) 4$^\circ$ interface
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016),  51–57
30. Electronic structure of a Ba/n-AlGaN(0001) interface and the formation of a degenerate 2D electron gas
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 91:12 (2010),  739–743
31. Self-organization of nanostructures on the n -GaN(0001) surface in the Cs and Ba adsorption
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 87:2 (2008),  119–123