Shashkin Vladimir Ivanovich

Publications in Math-Net.Ru

1. Microwave volt–impedance spectroscopy of semiconductors
   
   Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1944–1950
2. Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  865–867
3. Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  855–858
4. The use of pulsed laser annealing to form ohmic Mo/Ti contacts to diamond
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  34–38
5. Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers
   
   Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1923–1932
6. Ohmic contacts to CVD diamond with boron-doped $\delta$ layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1386–1390
7. Vertical field-effect transistor with control $p$–$n$-junction based on GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1311–1314
8. Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1229–1232
9. Detectors based on low-barrier mott diodes and their characteristics in the 150–250 GHz range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019),  56–58
10. Plasma chemical etching of gallium arsenide in C$_{2}$F$_{5}$Cl-based inductively coupled plasma
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1362–1365
11. Study of the structural and morphological properties of HPHT diamond substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1321–1325
12. Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges
    
    Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017),  746–753
13. Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1538–1542
14. Low-temperature deposition of SiN$_ x$ films in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1503–1506
15. Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1151
16. Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1595–1598
17. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1459–1462
18. On the radiation resistance of planar Gunn diodes with $\delta$-doped layers
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1507–1515
19. Si$_3$N$_4$ layers for the in-situ passivation of GaN-based HEMT structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1469–1472
20. Single-crystal GaN/AlN layers on CVD diamond
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  73–80
21. High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  17–25
22. Application of low-barrier metal–semiconductor–metal structures for the detection of microwave signals
    
    Zhurnal Tekhnicheskoi Fiziki, 84:7 (2014),  91–95
23. Aspherical single-lens objective for radio-vision systems of the millimeter-wavelength range
    
    Zhurnal Tekhnicheskoi Fiziki, 84:4 (2014),  120–125
24. Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface $\delta$-doping
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1481–1485
25. Experimental investigation of a matrix receiver for a 3-mm waveband imaging system
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:12 (2013),  44–49
26. Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1444–1447
27. Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1384–1387
28. Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al$_2$O$_3$ and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:24 (2012),  86–94
29. Photoconductivity of InAs/GaAs structures with InAs nanoclusters in the near-infrared region
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1511–1513
30. Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009),  80–83
31. Transport in weak barrier superlattices and the problem of the terahertz Bloch oscillator
    
    UFN, 173:7 (2003),  780–783
32. Diffusion Coefficient of Hot Carriers, Spectrum of Space-Charge Waves and Characteristic Frequencies of Instability in Semiconductor Superlattices
    
    Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  721–724


33. Захарий Фишелевич Красильник (к 70-летию со дня рождения)
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  285–286