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Padalitsa Anatolii Alekseevich

Publications in Math-Net.Ru

  1. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch

    Kvantovaya Elektronika, 53:1 (2023),  11–16
  2. Improvement of the current–voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940–980 nm)

    Kvantovaya Elektronika, 52:2 (2022),  179–181
  3. Heterostructures of quantum-cascade lasers with nonselective overgrowth by metalorganic vapour phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  46–50
  4. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm

    Kvantovaya Elektronika, 51:10 (2021),  909–911
  5. InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics

    Kvantovaya Elektronika, 51:10 (2021),  905–908
  6. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides

    Kvantovaya Elektronika, 51:4 (2021),  283–286
  7. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide

    Kvantovaya Elektronika, 51:2 (2021),  133–136
  8. AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier

    Kvantovaya Elektronika, 50:12 (2020),  1123–1125
  9. Triple integrated laser–thyristor

    Kvantovaya Elektronika, 50:11 (2020),  1001–1003
  10. Superluminescent diodes in the spectral range of 1.5–1.6 μm based on strain-compensated AlGaInAs/InP quantum wells

    Kvantovaya Elektronika, 50:9 (2020),  830–833
  11. The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers

    Kvantovaya Elektronika, 50:5 (2020),  489–492
  12. Double integrated laser-thyristor

    Kvantovaya Elektronika, 49:11 (2019),  1011–1013
  13. Superluminescent diodes of the 770–790-nm range based on semiconductor nanostructures with narrow quantum wells

    Kvantovaya Elektronika, 49:9 (2019),  810–813
  14. AlGaInAs/InP semiconductor lasers with an increased electron barrier

    Kvantovaya Elektronika, 49:6 (2019),  519–521
  15. THz stimulated emission from simple superlattice in positive differential conductivity region

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  463
  16. Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm

    Kvantovaya Elektronika, 48:3 (2018),  197–200
  17. Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%

    Kvantovaya Elektronika, 47:8 (2017),  693–695
  18. Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%

    Kvantovaya Elektronika, 47:4 (2017),  291–293
  19. Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides

    Kvantovaya Elektronika, 47:3 (2017),  272–274
  20. Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD

    Kvantovaya Elektronika, 46:5 (2016),  447–450
  21. Stimulated emission at transitions between Wannier–Stark ladders in semiconductor superlattices

    Pis'ma v Zh. Èksper. Teoret. Fiz., 102:4 (2015),  235–239
  22. Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure

    Kvantovaya Elektronika, 45:7 (2015),  601–603
  23. On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  716–718
  24. Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  104–108
  25. 1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures

    Kvantovaya Elektronika, 43:9 (2013),  822–823
  26. High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm

    Kvantovaya Elektronika, 43:9 (2013),  819–821
  27. High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguides

    Kvantovaya Elektronika, 43:5 (2013),  407–409
  28. Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers ($\lambda$ = 900–920 nm)

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1417–1421
  29. A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  251–255
  30. Dual-wavelength laser diodes based on epitaxially stacked heterostructures

    Kvantovaya Elektronika, 40:8 (2010),  697–699
  31. 808-nm laser diode bars based on epitaxially stacked double heterostructures

    Kvantovaya Elektronika, 40:8 (2010),  682–684
  32. Amplification of terahertz radiation on transitions between Wannier–Stark ladders in weak-barrier superlattices

    Kvantovaya Elektronika, 40:5 (2010),  400–405
  33. High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm

    Kvantovaya Elektronika, 39:8 (2009),  723–726
  34. High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures

    Kvantovaya Elektronika, 39:1 (2009),  18–20
  35. Double integrated nanostructures for pulsed 0.9-μm laser diodes

    Kvantovaya Elektronika, 38:11 (2008),  989–992
  36. Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes

    Kvantovaya Elektronika, 38:2 (2008),  97–102
  37. High-power broadband superluminescent diodes emitting in the 1000–1100-nm spectral range

    Kvantovaya Elektronika, 36:4 (2006),  315–318
  38. Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050–1100-nm spectral range

    Kvantovaya Elektronika, 35:10 (2005),  909–911
  39. Transport in weak barrier superlattices and the problem of the terahertz Bloch oscillator

    UFN, 173:7 (2003),  780–783
  40. Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers

    Kvantovaya Elektronika, 32:9 (2002),  809–814
  41. Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes

    Kvantovaya Elektronika, 32:3 (2002),  216–218
  42. High-power semiconductor 0.89 – 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures

    Kvantovaya Elektronika, 32:3 (2002),  213–215
  43. Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p — n junction

    Kvantovaya Elektronika, 27:1 (1999),  1–2
  44. Continuous-wave 1-W injection lasers emitting near 808 nm with a total efficiency up to 50%

    Kvantovaya Elektronika, 25:4 (1998),  303–304

  45. Errata to the article: Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes

    Kvantovaya Elektronika, 32:6 (2002),  564

© Steklov Math. Inst. of RAS, 2026