Drozdov Mikhail Nikolaevich

Publications in Math-Net.Ru

1. Schottky diodes based on monocrystalline Al/AlGaN/GaN heterostructures for zero-bias microwave detection
   
   Zhurnal Tekhnicheskoi Fiziki, 95:6 (2025),  1148–1156
2. CVD diamond structures with a $p$–$n$ junction – diodes and transistors
   
   Zhurnal Tekhnicheskoi Fiziki, 95:3 (2025),  540–548
3. Study of photo and electroluminescence of nitrogen-related color centers in a diamond $p$–$i$–$n$ diode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  48–51
4. Electroluminescence of germanium-vacancy color centers in a diamond $p$–$i$–$n$ diode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:8 (2025),  3–6
5. Structural and superconducting properties of tungsten and iridium films for low-temperature microcalorimeters
   
   Fizika Tverdogo Tela, 66:7 (2024),  1075–1080
6. Non-annealed ohmic contacts with reduced resistance to $p$- and $n$-type epitaxial layers of diamond and their thermal stability
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  409–414
7. Isotopically purified Si/SiGe epitaxial structures for quantum computing
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:10 (2024),  22–25
8. The coating a liquid glass of the optical element substrates and its molecular composition
   
   Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023),  1037–1045
9. Plasma chemical deposition of hydrogenated DLC films with different hydrogen and $sp^3$-hybrid carbon content
   
   Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  309–312
10. Crossover between Mott’s and Arrhenius’ laws in the temperature dependence of resistivity of highly boron-doped delta-layers in artificial diamond
    
    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  259–264
11. Surface treatment of gallium arsenide after etching in C$_2$F$_5$Cl-plasma
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:19 (2023),  39–42
12. Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates
    
    Nanosystems: Physics, Chemistry, Mathematics, 13:5 (2022),  578–584
13. Effect of hydrogen implantation dose on the relaxation of electrophysical characteristics of silicon-on-insulator structures after exposure to X-rays
    
    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  753–758
14. Influence of chloropentafluoroethane inductively coupled plasma parameters on the rate and characteristics of gallium arsenide etching
    
    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  685–688
15. Effect of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes
    
    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  627–629
16. Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer
    
    Fizika Tverdogo Tela, 63:9 (2021),  1245–1252
17. Effect of the chloropentafluoroethane additive in chlorine-containing plasma on the etching rate and etching-profile characteristics of gallium arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  837–840
18. Doping of carbon layers grown by the pulsed laser technique
    
    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  637–643
19. Influence of the finite-size effect on the cluster ion emission of silicon nanostructures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 111:8 (2020),  531–535
20. Secondary-ion mass spectroscopy for analysis of the implanted hydrogen profile in silicon and impurity composition of silicon-on-insulator structures
    
    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1850–1853
21. Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  868–872
22. Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  865–867
23. Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  855–858
24. Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  801–806
25. Formation of multilayered nanostructures of NV sites in single-crystal CVD diamond
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  19–23
26. The use of pulsed laser annealing to form ohmic Mo/Ti contacts to diamond
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  34–38
27. SIMS analysis of carbon-containing materials: content of carbon atoms in $sp^{2}$ and $sp^{3}$ hybridization states
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  38–42
28. Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers
    
    Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1923–1932
29. Ohmic contacts to CVD diamond with boron-doped $\delta$ layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1386–1390
30. Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1354–1359
31. Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1229–1232
32. Influence of annealing on the properties of Ge:Sb/Si(001) layers with an antimony concentration above its equilibrium solubility in germanium
    
    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  897–902
33. A new approach to tof-sims analysis of the phase composition of carbon-containing materials
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:2 (2019),  50–54
34. Experimental observation of the confinement of atomic collision cascades during ion sputtering of porous silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:2 (2019),  39–42
35. Magnetic skyrmions in thickness-modulated films
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 107:6 (2018),  378–382
36. Plasma chemical etching of gallium arsenide in C$_{2}$F$_{5}$Cl-based inductively coupled plasma
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1362–1365
37. A new limitation of the depth resolution in tof-sims elemental profiling: the influence of a probing ion beam
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:8 (2018),  11–19
38. New cluster secondary ions for quantitative analysis of the concentration of boron atoms in diamond by time-of-flight secondary-ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:7 (2018),  52–60
39. Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1611–1615
40. Low-temperature deposition of SiN$_ x$ films in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1503–1506
41. Features of the selective manganese doping of GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1468–1472
42. Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1151
43. Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:10 (2017),  50–59
44. Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1595–1598
45. Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1532–1536
46. Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer $\delta$-doped with Mn
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1490–1496
47. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1459–1462
48. Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  596–599
49. Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  350–353
50. Extremely deep profiling analysis of the atomic composition of thick ($>$ 100 $\mu$m) GaAs layers within power PIN diodes by secondary ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:15 (2016),  27–35
51. Nonlinear calibration curves in secondary ion mass spectrometry for quantitative analysis of gesi heterostructures with nanoclusters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:5 (2016),  40–48
52. Si$_3$N$_4$ layers for the in-situ passivation of GaN-based HEMT structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1469–1472
53. Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1453–1457
54. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1129–1135
55. Characteristics of fullerene-based diode structures on polymer and glass substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  138–141
56. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  21–24
57. Single-crystal GaN/AlN layers on CVD diamond
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  73–80
58. High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  17–25
59. Thin single-crystal Ge layers on 2" Si substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:1 (2015),  71–78
60. Use of related parameters in X-ray diffraction analysis of multilayer structures with allowance for the layer growth time
    
    Zhurnal Tekhnicheskoi Fiziki, 84:3 (2014),  94–98
61. Quantitative calibration and germanium SIMS depth profiling in Ge$_x$Si$_{1-x}$/Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1138–1146
62. Anomalous distribution of germanium implanted into a SOI dielectric layer after the annealing of radiation defects
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  631–635
63. A new approach to the diagnostics of nanoislands in Ge$_x$Si$_{1-x}$/Si heterostructures by secondary ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:14 (2014),  36–46
64. Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1580–1585
65. Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1493–1496
66. Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface $\delta$-doping
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1481–1485
67. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  621–625
68. Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  410–413
69. Depth profiling of fullerene-containing structures by time-of-flight secondary ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:24 (2013),  45–54
70. Changes in the elemental composition and microstructure of an YBa$_2$Cu$_3$O$_{7-\delta}$ target during magnetron sputtering
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:19 (2013),  41–50
71. Heterostructures with GaAs/AlGaAs superlattices grown by MOCVD: growth features, optical and transport characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1593–1596
72. Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1527–1531
73. Method for taking into account the shift parameter in the deconvolution of the depth composition distribution of semiconductor structures from SIMS depth profiles
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1515–1520
74. Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1444–1447
75. Analysis of the composition of (Al,Ga)As alloys by secondary ion mass spectroscopy and X-ray diffractometry
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1419–1423
76. Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al$_2$O$_3$ and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:24 (2012),  86–94
77. A new alternative to secondary CsM$^+$ ions for depth profiling of multilayer metal structures by secondary ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:24 (2012),  75–85
78. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  132–135
79. Method of selective doping of silicon by segregating impurities
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:17 (2011),  75–81
80. Electrical and structural parameters of YBCO films obtained by repeated growth cycles
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:14 (2011),  54–59
81. Boron doping of Si$_{1-x}$Ge$_x$/Si heterostructures grown by silicon sublimation in germane medium
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:13 (2011),  24–30
82. Photoconductivity of InAs/GaAs structures with InAs nanoclusters in the near-infrared region
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1511–1513
83. Secondary cluster ions Ge$_2^-$ and Ge$_3^-$ for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  418–421
84. Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009),  80–83
85. Transport in weak barrier superlattices and the problem of the terahertz Bloch oscillator
    
    UFN, 173:7 (2003),  780–783