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Tereshchenko Oleg Evgen'evich

Publications in Math-Net.Ru

  1. Nonlinear Hall coefficient in films of a three-dimensional topological insulator

    Pis'ma v Zh. Èksper. Teoret. Fiz., 120:3 (2024),  208–213
  2. Electronic structure of janus layers based on Ti$_{1-y}$Cr$_y$(Se$_{1-x}$S$_x$)$_2$

    Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  365–369
  3. Electronic properties of the topological insulator Sb$_2$Te$_2$Se

    Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  192–195
  4. Passivation of CdHgTe surface using low-temperature plasma-enhanced atomic layer deposition of HfO$_2$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024),  7–10
  5. Oxide/InAs(001) interface passivation with fluorine

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  6–9
  6. Photosensitivity of a metal-insulator-semiconductor field-effect transistor based on PbSnTe:In film with a composition close to the bands inversion

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023),  22–25
  7. Mixed type of the magnetic order in intrinsic magnetic topological insulators Mn(Bi,Sb)$_2$Te$_4$

    Pis'ma v Zh. Èksper. Teoret. Fiz., 116:11 (2022),  793–800
  8. Electronic structure of magnetic topological insulators Mn(Bi$_{1-x}$Sb$_{x})_2$Te$_4$ with various concentration of sb atoms

    Pis'ma v Zh. Èksper. Teoret. Fiz., 115:5 (2022),  315–321
  9. Optimization of the buffer dielectric layer for the creation of low-defect epitaxial films of the topological insulator Pb$_{1-x}$Sn$_x$Te with $x\ge$ 0.4

    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  642–645
  10. MIS transistor based on PbSnTe : In film with an Al$_2$O$_3$ gate dielectric

    Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  243–249
  11. Optical phonon spectrum of the Ge$_2$Sb$_2$Te$_5$ single crystal

    Pis'ma v Zh. Èksper. Teoret. Fiz., 113:10 (2021),  683–688
  12. Preparation atomically clean and structurally ordered surfaces of epitaxial CdTe films for subsequent epitaxy

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  748–753
  13. Structural characterization of Pb$_{0.7}$Sn$_{0.3}$Te crystalline topological insulator thin films grown on Si(111)

    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  625–628
  14. Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1122–1128
  15. Optical and transport properties of epitaxial Pb$_{0.74}$Sn$_{0.26}$Te(In) films with a modifiable surface

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  896–901
  16. Energy-gap opening near the Dirac point after the deposition of cobalt on the (0001) surface of the topological insulator BiSbTeSe$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  859–864
  17. Sign-alternating photoconductivity in PbSnTe : In films in the space-charge-limited current regime

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  796–800
  18. Modification of the surface properties of PbSnTe$\langle$In$\rangle$ epitaxial layers with composition near band inversion

    Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019),  1795–1799
  19. Features of the impurity-photoconductivity spectra of PbSnTe(In) epitaxial films with temperature changes

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1303–1308
  20. Surface ñonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1207–1211
  21. A study of the crystal structure of Co$_{40}$Fe$_{40}$B$_{20}$ epitaxial films on a Bi$_{2}$Te$_{3}$ topological insulator

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:5 (2018),  10–15
  22. AlN/GaN heterostructures for normally-off transistors

    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  395–402
  23. Surface spin-polarized currents generated in topological insulators by circularly polarized synchrotron radiation and their photoelectron spectroscopy indication

    Fizika Tverdogo Tela, 58:8 (2016),  1617–1628
  24. Specific features of the electronic, spin, and atomic structures of a topological insulator Bi$_{2}$Te$_{2.4}$Se$_{0.6}$

    Fizika Tverdogo Tela, 58:4 (2016),  754–762
  25. Role of anisotropy and spin-orbit interaction in the optical and dielectric properties of BiTeI and BiTeCl compounds

    Pis'ma v Zh. Èksper. Teoret. Fiz., 101:8 (2015),  563–568
  26. Effect of fluorine on the electrical properties of anodic oxide/InAs(111)A interface

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  322–326
  27. Dynamics of the BiTeI lattice at high pressures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 98:9 (2013),  626–630
  28. Study of the morphology and optical properties of anodic oxide layers on InAs (111)III

    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  532–537
  29. Quick ellipsometric technique for determining the thicknesses and optical constant profiles of Fe/SiO$_2$/Si(100) nanostructures during growth

    Zhurnal Tekhnicheskoi Fiziki, 82:9 (2012),  44–48
  30. Formation of anodic layers on InAs (111)III. Study of the chemical composition

    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  569–575
  31. Change in the electronic properties of an InAs (111)A surface at oxygen and fluorine adsorption

    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  53–59
  32. Forming interface in Pd/Fe/GaAs/InGaAs structure for optical detector of free-electron spin

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:1 (2012),  27–36
  33. Stability of the (0001) surface of the Bi$^2$Se$^3$ topological insulator

    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:6 (2011),  500–503
  34. Surfactant properties of cesium in molecular beam epitaxy of GaAs(100)

    Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011),  647–652
  35. Chlorine adsorption on the InAs (001) surface

    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  23–31
  36. Reconstruction dependence of the etching and passivation of the GaAs(001) surface

    Pis'ma v Zh. Èksper. Teoret. Fiz., 91:9 (2010),  511–516
  37. New Ga-enriched reconstructions on the GaAs(001) surface

    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:4 (2009),  209–214
  38. Energy threshold of Cs-induced chemisorption of oxygen on a GaAs(Cs, O) surface

    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:8 (2008),  597–600
  39. Reversible superstructural transitions on the GaAs(001) surface under the selective effect of iodine and cesium

    Pis'ma v Zh. Èksper. Teoret. Fiz., 87:1 (2008),  41–44
  40. Energy distributions of photoelectrons emitted from $p$-GaN(Cs, O) with effective negative electron affinity

    Pis'ma v Zh. Èksper. Teoret. Fiz., 79:10 (2004),  592–596
  41. Decrease in the bond energy of arsenic atoms on the GaAs(100)-(2$\times$4)/c(2$\times$8) surface due to the effect of adsorbed cesium

    Pis'ma v Zh. Èksper. Teoret. Fiz., 79:3 (2004),  163–167

© Steklov Math. Inst. of RAS, 2026