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Ledentsov Nikolai Nikolaevich

Publications in Math-Net.Ru

  1. The design of an electrically-driven single photon source of the 1.3-$\mu$m spectral range based on a vertical microcavity with intracavity contacts

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021),  23–27
  2. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)

    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
  3. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  98–104
  4. A design and new functionality of antiwaveguiding vertical-cavity surface-emitting lasers for a wavelength of 850 nm

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  85–94
  5. The influence of cavity design on the linewidth of near-ir single-mode vertical-cavity surface-emitting lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  67–75
  6. Vertical-cavity surface-emitting 1.55-$\mu$m lasers fabricated by fusion

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  59–66
  7. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1697
  8. Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  81–87
  9. Efficient electro-optic semiconductor medium based on type-II heterostructures

    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1542–1553
  10. Optical anisotropy of InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  87–91
  11. Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:22 (2012),  43–49
  12. Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:3 (2012),  10–16
  13. Effect of AlGaAs–(AlGa)$_x$O$_y$ pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  992–995
  14. Matrices of 960-nm vertical-cavity surface-emitting lasers

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  836–839
  15. Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  688–693
  16. A temperature-stable semiconductor laser based on coupled waveguides

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  560–565
  17. New-generation vertically emitting lasers as a key factor in the computer communication era

    UFN, 181:8 (2011),  884–890
  18. Analysis of mechanisms of carrier emission in the $p$–$i$–$n$ structures with In(Ga)As quantum dots

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1352–1356
  19. Structural and optical properties of InAlN/GaN distributed Bragg reflectors

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  981–985
  20. Optical anisotropy of InAs quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  24–30
  21. Photoluminescence and the structure of heterointerfaces of (311)A-and (311)B-oriented GaAs/AlAs superlattices

    Pis'ma v Zh. Èksper. Teoret. Fiz., 75:4 (2002),  211–216
  22. Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

    UFN, 171:8 (2001),  857–858
  23. Vertical-cavity emitting devices with quantum-dot structures

    UFN, 171:8 (2001),  855–857
  24. The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

    UFN, 169:4 (1999),  459–464
  25. Spontaneous ordering of semiconductor nanostructures

    UFN, 167:5 (1997),  552–555
  26. Ordered quantum-dot arrays in semiconducting matrices

    UFN, 166:4 (1996),  423–428
  27. Strained-submonolayer and quantum-dot superstructures

    UFN, 165:2 (1995),  224–225
  28. Growth of GaAs-AlAs quantum clusters on faceted GaAs surface oriented not aling to (100) by the method of molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1715–1722
  29. GROWING COMPOUNDS IN THE SYSTEM OF YB-BA-CU-O WITH THE USE OF A BAO MOLECULAR-BEAM

    Zhurnal Tekhnicheskoi Fiziki, 61:8 (1991),  106–114
  30. Гигантские диффузионные длины неравновесных носителей в квантово-размерных гетероструктурах

    Fizika i Tekhnika Poluprovodnikov, 24:9 (1990),  1691–1693
  31. Получение методом молекулярно-пучковой эпитаксии гетероструктур GaSb/InAs/GaSb с высокой подвижностью двумерных электронов

    Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  717–719
  32. Электрические и оптические эффекты при резонансном туннелировании в (Al, Ga)As$-$GaAs-гетероструктурах с двойным барьером

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  361–363
  33. (In, Ga, Al)As ДГС РО лазеры на длину волны 1.1 мкм с (In, Ga)As напряженной квантовой ямой, ограниченной короткопериодной сверхрешеткой

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  359–361
  34. (Al, Ga)As ДГС РО лазеры на длины волн 0.8 мкм (175 А/см$^{2}$) и 0.73 мкм (350 A/см$^{2}$) с легированной квантовой ямой

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  201–203
  35. Растекание и поверхностная рекомбинация неравновесных носителей в квантово-размерных (Al, Ga)As ДГС РО лазерах с широким полоском

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  152–158
  36. EFFECT OF PHOTOINDUCED ELECTRON-HOLE PLASMA DECOMPOSITION IN SINGULAR SELECTIVE-ALLOYED HETEROSTRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:20 (1990),  90–95
  37. REDUCTION OF THRESHOLD CURRENT-DENSITY IN GAAS-ALGAAS DHS QUANTUM-DIMENSIONAL LASERS(JN=52ACM-2,T=300-K) UNDER THE LIMITATION OF A QUANTUM HOLE BY THE SHORT-PERIOD SUPERLATTICE WITH VARIABLE-PITCH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1803–1807
  38. Intrinsic Luminescence of GaAs$-$Al$_{x}$Ga$_{1-x}$As Sharp HelerojimcLiou

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  353–356
  39. Lasers based on heterostructures with active areas limited by multilayered lattices

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  562–565
  40. EFFECT OF GROWTH-CONDITIONS ON THE HUM ADDITIONS IN GAAS ALLOYED LAYERS GROWN BY MBE METHODS

    Zhurnal Tekhnicheskoi Fiziki, 55:1 (1985),  142–147
  41. Intrinsic and Impurity Luminescence in GaAs$-$AlGaAs Structures with Quantum Wells

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  715–721
  42. Effect of Growth Conditions on the Implantation of Background Impurities into Undoped GaAs Epitaxial Layers Grown by the Method of Molecular-Beam Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  270–274

  43. Zhores Ivanovich Alferov (on his 80th birthday)

    UFN, 180:3 (2010),  333–334
  44. Zhores Ivanovich Alferov (on his seventieth birthday)

    UFN, 170:3 (2000),  349–350

© Steklov Math. Inst. of RAS, 2026