Zhukov Alexey Evgen'evich

Publications in Math-Net.Ru

1. Study of the emission from a microdisk laser monolithically integrated with an optical waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  388–391
2. Bridge-contact microdisk lasers formed by wet chemical etching
   
   Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  37–42
3. High-frequency modulation of a quantum dot microring laser at elevated temperature
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:20 (2025),  32–35
4. Monolithic integration of InGaAs/GaAs quantum dot microdisk lasers with optical transparent waveguides
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:19 (2025),  11–14
5. Lasing in InGaN/GaN/AlGaN disk microstructures on silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  41–45
6. Microdisk lasers based on InGaAs/GaAs quantum dots monolithically integrated with a waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  107–113
7. Dependence of lasing wavelength on optical loss in quantum dot laser
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:21 (2024),  57–60
8. Optical studies of InP/InAsP/InP nanoinclusions integrated into silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024),  3–6
9. Contribution of additional waveguides to heterostructure resistance of high-power coupled-waveguide-based InGaAs/GaAs/AlGaAs edge-emitting lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:2 (2024),  18–22
10. Investigation of high-temperature generation of microdisk lasers with optically coupled waveguide
    
    Optics and Spectroscopy, 131:11 (2023),  1483–1485
11. The effect of surface passivation of GaAs-based cylindrical mesa structures on their optical properties
    
    Optics and Spectroscopy, 131:8 (2023),  1112–1117
12. Broadband superluminescent diodes based on multiple InGaAs/GaAs quantum well-dot layers
    
    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  301–307
13. Effect of arsenic pressure during overgrowth of InAs quantum dots with a thin low-temperature GaAs layer on their optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  276–281
14. Model for speed performance of quantum-dot waveguide photodiode
    
    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  215–220
15. Investigation of a $p$–$i$–$n$ photodetector with an absorbing medium based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  202–206
16. Information encoding using two-level generation in a quantum dot laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  18–21
17. Temperature dependencies of radiative and nonradiative carrier lifetimes in InGaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  993–996
18. The influence of the waveguide layer composition on the emission parameters of 1550 nm InGaAs/InP laser heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  933–939
19. Internal loss in diode lasers with quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  922–927
20. Design of blocking layers for suppression of parasitic recombination in high-power laser diodes with GaAs waveguide
    
    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  363–369
21. Bimodality in the electroluminescence spectra of quantum well-dots InGaAs nanostructures
    
    Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  97–100
22. Temperature-dependent characteristics of 1.3 $\mu$m InAs/InGaAs/GaAs quantum dot ring lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:18 (2022),  36–40
23. Two-state lasing in injection microdisks with InAs/InGaAs quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:12 (2022),  40–43
24. High-speed photodetectors based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  32–35
25. Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots
    
    Kvantovaya Elektronika, 52:7 (2022),  593–596
26. Increase in the efficiency of a tandem of semiconductor laser – optical amplifier based on self-organizing quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1223–1228
27. Saturation power of a semiconductor optical amplifier based on self-organized quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  820–825
28. Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  256–263
29. Impact of substrate in calculating the electrical resistance of microdisk lasers
    
    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  195–200
30. Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  3–6
31. An investigation of the sensitivity of a microdisk laser to a change in the refractive index of the environment
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021),  30–33
32. Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  28–31
33. Spectroscopy of photoluminescence excitation of InAs/InGaAs/GaAs quantum dot array in 20–300 K temperature range
    
    Optics and Spectroscopy, 128:1 (2020),  110–117
34. Specific growth features of nanostructures for terahertz quantum cascade lasers and their physical properties
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  902–905
35. Ultimate lasing temperature of microdisk lasers
    
    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  570–574
36. Parasitic recombination in a laser with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  296–303
37. Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  212–216
38. High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  11–14
39. Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020),  3–6
40. A micro optocoupler based on a microdisk laser and a photodetector with an active region based on quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  7–10
41. The effect of self-heating on the modulation characteristics of a microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  3–7
42. Experimental and theoretical examination of the photosensitivity spectra of structures with In$_{0.4}$Ga$_{0.6}$As quantum well-dots of the optical range (900–1050 nm)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  3–6
43. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
44. Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1520–1526
45. Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1122–1127
46. The use of microdisk lasers based on InAs/InGaAs quantum dots in biodetection
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:23 (2019),  10–13
47. Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  37–39
48. Energy consumption for high-frequency switching of a quantum-dot microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  49–51
49. Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  20–23
50. Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  42–45
51. Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1518–1526
52. Reduction of internal loss and thermal resistance in diode lasers with coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1351–1356
53. Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1191–1196
54. Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1131–1136
55. Suppression of recombination in the waveguide of a laser heterostructure by means of double asymmetric barriers
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  260–265
56. Bimodality in arrays of In$_{0.4}$Ga$_{0.6}$As hybrid quantum-confined heterostructures grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  57–62
57. Power characteristics and temperature dependence of the angular beam divergence of lasers with a near-surface active region
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:15 (2018),  46–51
58. Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  55–61
59. On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1382–1386
60. InAs QDs in a metamorphic In$_{0.25}$Ga$_{0.75}$As matrix, grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  704–710
61. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  540–546
62. Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  372–377
63. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  276–280
64. Specific features of waveguide recombination in laser structures with asymmetric barrier layers
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  263–268
65. Terahertz radiation generation in multilayer quantum-cascade heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017),  86–94
66. Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1425–1428
67. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1395–1400
68. Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1380–1386
69. Optical properties of hybrid quantum-confined structures with high absorbance
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1202–1207
70. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  674–678
71. Microdisk injection lasers for the 1.27-$\mu$m spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  393–397
72. Spatial hole burning and spectral stability of a quantum-dot laser
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1546–1552
73. Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1115–1119
74. On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  956–960
75. Thermal resistance of ultra-small-diameter disk microlasers
    
    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  688–692
76. The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  86–94
77. The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  61–70
78. Lasing in microdisks of ultrasmall diameter
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1666–1670
79. Multilayer quantum-dot arrays of high bulk density
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1487–1491
80. Whispering-gallery mode microcavity quantum-dot lasers
    
    Kvantovaya Elektronika, 44:3 (2014),  189–200
81. Spectral dependence of the linewidth enhancement factor in quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1681–1686
82. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1406–1413
83. Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1396–1399
84. Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1102–1108
85. High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  684–689
86. Optical anisotropy of InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  87–91
87. Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  70–77
88. Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1353–1356
89. Device characteristics of long-wavelength lasers based on self-organized quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1249–1273
90. High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1063–1066
91. Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1049–1053
92. Influence of inhomogeneous broadening and deliberately introduced disorder on the width of the lasing spectrum of a quantum dot laser
    
    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  701–707
93. Features of simultaneous ground- and excited-state lasing in quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  241–246
94. Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  235–240
95. Experimental study of frequency multipliers based on a GaAs/AlAs semiconductor superlattices in the terahertz frequency range
    
    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  125–129
96. Polarization dependence of Fano resonances in impurity photoconductivity of quantum wells doped with shallow donors
    
    Fizika Tverdogo Tela, 53:6 (2011),  1188–1197
97. Effect of the nonlinear saturation of the gain on the peak modulation frequency in lasers based on self-assembled quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  996–1000
98. Effect of AlGaAs–(AlGa)$_x$O$_y$ pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  992–995
99. Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  540–546
100. Spectral width of laser generation in quantum dot lasers: An analytical approach
     
     Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  245–250
101. Carrier heating in quantum wells under optical and current injection of electron-hole pairs
     
     Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1451–1454
102. Terahertz emission and photoconductivity in $n$-type GaAs/AlGaAs quantum wells: the role of resonant impurity states
     
     Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1443–1446
103. A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes
     
     Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1401–1406
104. Analysis of mechanisms of carrier emission in the $p$–$i$–$n$ structures with In(Ga)As quantum dots
     
     Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1352–1356
105. Optical anisotropy of InAs quantum dots
     
     Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  24–30
106. Stimulated emission from optically pumped quantum dots
     
     Kvantovaya Elektronika, 40:7 (2010),  579–582
107. Quantum dot diode lasers for optical communication systems
     
     Kvantovaya Elektronika, 38:5 (2008),  409–423
108. Superluminescent InAs/AlGaAs/GaAs quantum dot heterostructure diodes emitting in the 1100—1230-nm spectral range
     
     Kvantovaya Elektronika, 36:6 (2006),  527–531
109. Vertical-cavity emitting devices with quantum-dot structures
     
     UFN, 171:8 (2001),  855–857
110. Strained-submonolayer and quantum-dot superstructures
     
     UFN, 165:2 (1995),  224–225
111. Growth of GaAs-AlAs quantum clusters on faceted GaAs surface oriented not aling to (100) by the method of molecular-beam epitaxy
     
     Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1715–1722


112. In memory of Zhores Ivanovich Alferov
     
     UFN, 189:8 (2019),  899–900
113. Zhores Ivanovich Alferov (on his 80th birthday)
     
     UFN, 180:3 (2010),  333–334