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Kop'ev Petr Sergeevich

Publications in Math-Net.Ru

  1. High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence

    Kvantovaya Elektronika, 53:5 (2023),  374–378
  2. High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses

    Kvantovaya Elektronika, 52:12 (2022),  1152–1165
  3. High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture

    Kvantovaya Elektronika, 52:4 (2022),  340–342
  4. Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm

    Kvantovaya Elektronika, 52:2 (2022),  171–173
  5. High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure

    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  344–348
  6. Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  42–45
  7. Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures

    Kvantovaya Elektronika, 51:2 (2021),  129–132
  8. Radiative recombination and impact ionization in semiconductor nanostructures (review)

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1267–1288
  9. Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide

    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  414–419
  10. Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide

    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  408–413
  11. Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis

    Kvantovaya Elektronika, 50:2 (2020),  147–152
  12. Resonance energy transfer in a dense array of II–VI quantum dots

    Fizika Tverdogo Tela, 58:11 (2016),  2175–2179
  13. Temperature switching of cavity modes in InN microcrystals

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1484–1488
  14. Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping

    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  342–348
  15. Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites

    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  254–260
  16. Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  710–715
  17. Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  352–357
  18. Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges

    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1595–1598
  19. AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1082–1086
  20. Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow–green spectral region

    Kvantovaya Elektronika, 43:5 (2013),  418–422
  21. RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  96–102
  22. Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1379–1385
  23. Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  213–219
  24. Plasmon effects in In(Ga)N nanostructures

    UFN, 179:9 (2009),  1007–1012
  25. Effect of the spin-orbit interaction on the cyclotron resonance of two-dimensional electrons

    Pis'ma v Zh. Èksper. Teoret. Fiz., 79:11 (2004),  674–679
  26. Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers

    Kvantovaya Elektronika, 34:10 (2004),  909–911
  27. Cyclotron resonance in the InAs/GaSb heterostructure in an inclined magnetic field

    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:4 (2002),  258–262
  28. Far infrared electroluminescence in cascade type-II heterostructures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 75:8 (2002),  463–466
  29. Blue-green lasers based on short-period superlattices in II—VI compounds

    UFN, 169:4 (1999),  468–471
  30. The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

    UFN, 169:4 (1999),  459–464
  31. Spontaneous ordering of semiconductor nanostructures

    UFN, 167:5 (1997),  552–555
  32. Ordered quantum-dot arrays in semiconducting matrices

    UFN, 166:4 (1996),  423–428
  33. Strained-submonolayer and quantum-dot superstructures

    UFN, 165:2 (1995),  224–225
  34. Growth of GaAs-AlAs quantum clusters on faceted GaAs surface oriented not aling to (100) by the method of molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1715–1722
  35. GROWING COMPOUNDS IN THE SYSTEM OF YB-BA-CU-O WITH THE USE OF A BAO MOLECULAR-BEAM

    Zhurnal Tekhnicheskoi Fiziki, 61:8 (1991),  106–114
  36. Исследование взаимного теплового влияния элементов лазерной линейки, работающей в квазинепрерывном режиме

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1361–1365
  37. Гигантские диффузионные длины неравновесных носителей в квантово-размерных гетероструктурах

    Fizika i Tekhnika Poluprovodnikov, 24:9 (1990),  1691–1693
  38. Фотолюминесценция горячих двумерных электронов в квантовых ямах и определение времен полярного рассеяния

    Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1200–1208
  39. Получение методом молекулярно-пучковой эпитаксии гетероструктур GaSb/InAs/GaSb с высокой подвижностью двумерных электронов

    Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  717–719
  40. Электрические и оптические эффекты при резонансном туннелировании в (Al, Ga)As$-$GaAs-гетероструктурах с двойным барьером

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  361–363
  41. (In, Ga, Al)As ДГС РО лазеры на длину волны 1.1 мкм с (In, Ga)As напряженной квантовой ямой, ограниченной короткопериодной сверхрешеткой

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  359–361
  42. (Al, Ga)As ДГС РО лазеры на длины волн 0.8 мкм (175 А/см$^{2}$) и 0.73 мкм (350 A/см$^{2}$) с легированной квантовой ямой

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  201–203
  43. Растекание и поверхностная рекомбинация неравновесных носителей в квантово-размерных (Al, Ga)As ДГС РО лазерах с широким полоском

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  152–158
  44. EFFECT OF PHOTOINDUCED ELECTRON-HOLE PLASMA DECOMPOSITION IN SINGULAR SELECTIVE-ALLOYED HETEROSTRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:20 (1990),  90–95
  45. HYDROGEN EFFECT ON OPTICAL AND TRANSPORT-PROPERTIES OF EPITAXIAL LAYERS OF ALGAAS-SI

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:20 (1990),  1–5
  46. Переходы с участием размерно-квантованных подзон в спектре фотолюминесценции $\delta$-легированного GaAs

    Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2133–2137
  47. Энергетическая релаксация и транспорт электронов и дырок в короткопериодичных полупроводниковых сверхрешетках

    Fizika i Tekhnika Poluprovodnikov, 23:9 (1989),  1564–1567
  48. Механизмы нестационарной фотопроводимости в селективно легированных гетероструктурах GaAs/$n$-(Al, Ga)As

    Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1382–1385
  49. Спектр поглощения структур с квантовыми ямами

    Fizika i Tekhnika Poluprovodnikov, 23:7 (1989),  1316–1318
  50. О «нулевых осцилляциях» в структурах с двумерным электронным газом

    Fizika i Tekhnika Poluprovodnikov, 23:6 (1989),  1110–1113
  51. Особенности эффекта устойчивой фотопроводимости в селективно легированных двойных гетероструктурах GaAs/$n$-(Al, Ga)As

    Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  845–848
  52. INCREASING OF MOBILITY OF TWO-DIMENSIONAL ELECTRONS ON ALAS/GAAS HETEROBOUNDARY AS COMPARED TO ALGAAS/GAAS IN HETEROSTRUCTURES WITH SELECTIVE DELTA-ALLOYING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:8 (1989),  68–71
  53. The energy spectrum of Coulomb states in a quantum well

    UFN, 157:3 (1989),  545–547
  54. Молекулярно-пучковая эпитаксия гетероструктур на основе соединений $A^{\mathrm{III}}B^{\mathrm{V}}$

    Fizika i Tekhnika Poluprovodnikov, 22:10 (1988),  1729–1742
  55. Отражение в экситонной области спектра структуры с одиночной квантовой ямой. Наклонное и нормальное падение света

    Fizika i Tekhnika Poluprovodnikov, 22:5 (1988),  784–788
  56. Определение профиля концентрации мелких примесей методом поляризованной люминесценции в структурах с квантовыми ямами

    Fizika i Tekhnika Poluprovodnikov, 22:4 (1988),  597–603
  57. Локализация квазидвумерных экситонов на островковых увеличениях ширины квантовой ямы

    Fizika i Tekhnika Poluprovodnikov, 22:3 (1988),  424–432
  58. REDUCTION OF THRESHOLD CURRENT-DENSITY IN GAAS-ALGAAS DHS QUANTUM-DIMENSIONAL LASERS(JN=52ACM-2,T=300-K) UNDER THE LIMITATION OF A QUANTUM HOLE BY THE SHORT-PERIOD SUPERLATTICE WITH VARIABLE-PITCH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1803–1807
  59. Effect of acoustic phonon pulses on the extrinsic luminescence of semiconductor quantum-well structures

    Fizika Tverdogo Tela, 29:6 (1987),  1843–1847
  60. Intrabarrier Recombination Radiation of GaAs$-$Al$_{0.4}$Ga$_{0.6}$As Multilayer Structures with Quantum Wells

    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1184–1189
  61. Intrinsic Luminescence of GaAs$-$Al$_{x}$Ga$_{1-x}$As Sharp HelerojimcLiou

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  353–356
  62. Lasers based on heterostructures with active areas limited by multilayered lattices

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  562–565
  63. EFFECT OF GROWTH-CONDITIONS ON THE HUM ADDITIONS IN GAAS ALLOYED LAYERS GROWN BY MBE METHODS

    Zhurnal Tekhnicheskoi Fiziki, 55:1 (1985),  142–147
  64. Galvanomagnetic Effects in $N$-Al$_{0.3}$Ga$_{0.7}$As/GaAs Heterostructures under high Level Doped

    Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1199–1203
  65. Effect of Growth Conditions on the Implantation of Background Impurities into Undoped GaAs Epitaxial Layers Grown by the Method of Molecular-Beam Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  270–274
  66. Оже-профили состава резких гетеропереходов, выращенных методом молекулярно-пучковой эпитаксии

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:12 (1983),  751–754
  67. Fiber-optical long-distance telecommunication line operating at the wavelength of 1.3 μ

    Kvantovaya Elektronika, 5:11 (1978),  2486–2488

  68. Андрей Георгиевич Забродский, к 75-летию со дня рождения

    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  893–894
  69. In memory of Zhores Ivanovich Alferov

    UFN, 189:8 (2019),  899–900
  70. Zhores Ivanovich Alferov (on his seventieth birthday)

    UFN, 170:3 (2000),  349–350

© Steklov Math. Inst. of RAS, 2026