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Ivanov Sergei Viktorovich

Publications in Math-Net.Ru

  1. Импульсные характеристики однопереходных и трёхпереходных фотопреобразователей лазерного излучения

    Optics and Spectroscopy, 133:11 (2025),  1145–1149
  2. Generation of microwave pulses by zero-bias monolithic triple-junction AlGaAs/GaAs $p$–$i$–$n$ photoconverters and modules

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  27–30
  3. Effect of design and growth conditions of metamorphic In(Ga,Al)As/GaAs heterostructures on electrical properties of In$_{0.75}$Ga$_{0.25}$As/InAlAs two-dimensional channel

    Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  142–148
  4. Monolithic triple-junction $p$–$i$–$n$ AlGaAs/GaAs laser photoconverter

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  35–38
  5. Reduction of misfit dislocation density in metamorphic heterostructures by design optimization of the buffer layer with non-linear graded composition profile

    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  153–159
  6. Distribution of misfit dislocations and elastic mechanical stresses in metamorphic buffer InAlAs layers of various constructions

    Fizika Tverdogo Tela, 63:1 (2021),  85–90
  7. Photoconductive THz detector based on new functional layers in multi-layer heterostructures

    Optics and Spectroscopy, 129:6 (2021),  741–746
  8. Development and study of the $p$–$i$–$n$-диодов GaAs/AlGaAs tunnel diodes for multijunction converters of high-power laser radiation

    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  285–291
  9. Stimulated emission at a wavelength of $2.86 \mu$m from In(Sb, As)/In(Ga, Al)As/GaAs metamorphic quantum wells under optical pumping

    Pis'ma v Zh. Èksper. Teoret. Fiz., 110:5 (2019),  297–302
  10. Effect of strongly mismatched GaAs and InAs inserts in a InAlAs buffer layer on the structural and optical properties of metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs quantum-confined heterostructures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019),  381–386
  11. Highly efficient semiconductor emitter of single photons in the red spectral range

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019),  147–151
  12. Boson peak related to Ga-nanoclusters in AlGaN layers grown by plasma-assisted molecular beam epitaxy at Ga-rich conditions

    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1519
  13. Molecular-beam epitaxy of two-dimensional gase layers on GaAs(001) and GaAs(112) substrates: structural and optical properties

    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1152–1158
  14. Stimulated emission, photoluminescence, and localisation of nonequilibrium charge carriers in ultrathin (monolayer) GaN/AlN quantum wells

    Kvantovaya Elektronika, 49:6 (2019),  535–539
  15. Förster energy transfer in arrays of epitaxial CdSe/ZnSe quantum dots involving bright and dark excitons

    Fizika Tverdogo Tela, 60:8 (2018),  1575–1579
  16. Single-photon emission from InAs/AlGaAs quantum dots

    Fizika Tverdogo Tela, 60:4 (2018),  687–690
  17. Single-photon emitter at 80 K based on a dielectric nanoantenna with a CdSe/ZnSe quantum dot

    Pis'ma v Zh. Èksper. Teoret. Fiz., 108:3 (2018),  201–205
  18. Features of the selective growth of GaN nanorods on patterned $c$-sapphire substrates of various configurations

    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1663–1667
  19. Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on $\mu$-cone patterned sapphire substrates by plasma-assisted MBE

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  526
  20. Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  515
  21. Red single-photon emission from InAs/AlGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  480
  22. Optimization of the structural properties and surface morphology of a convex-graded In$_{x}$Al$_{1-x}$As ($x$ = 0.05–0.83) metamorphic buffer layer grown via MBE on GaAs (001)

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  127–132
  23. The effect of charge transport mechanisms on the efficiency of Al$_{x}$Ga$_{1-x}$As/GaAs photodiodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:22 (2018),  33–41
  24. Nanoheterostructures with CdTe/Zn(Mg)(Se)Te quantum dots for single-photon emitters grown by molecular beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018),  94–102
  25. Spontaneous formation of indium clusters in InN epilayers grown by molecular-beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  42–49
  26. The interference enhancement of light polarization conversion from structures with a quantum well

    Fizika Tverdogo Tela, 59:11 (2017),  2148–2153
  27. Manifestation of $PT$ symmetry in the exciton spectra of quantum wells

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1605–1609
  28. Stress generation and relaxation in (Al, Ga)N/6$H$-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017),  67–74
  29. Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III–N heterostructures by molecular-beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:5 (2017),  60–67
  30. Photoreflectance of indium antimonide

    Fizika Tverdogo Tela, 58:12 (2016),  2307–2313
  31. AlGaN nanostructures with extremely high quantum yield at 300 K

    Fizika Tverdogo Tela, 58:11 (2016),  2180–2185
  32. Resonance energy transfer in a dense array of II–VI quantum dots

    Fizika Tverdogo Tela, 58:11 (2016),  2175–2179
  33. Isolated quantum emitters originating from defect centers in a ZnSe/ZnMgSSe heterostructure

    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016),  108–113
  34. Heterostructures with CdTe/ZnTe quantum dots for single photon emitters grown by molecular beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:24 (2016),  64–71
  35. Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  33–39
  36. Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  57–63
  37. Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016),  40–48
  38. X-ray diffractometry of AlN/$c$-sapphire templates obtained by plasma-activated molecular beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  61–69
  39. Temperature switching of cavity modes in InN microcrystals

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1484–1488
  40. Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells

    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1024–1030
  41. Temperature dependences of the contact resistivity in ohmic contacts to $n^+$-InN

    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  472–482
  42. Optical studies of carriers’ vertical transport in the alternately-strained ZnS$_{0.4}$Se$_{0.6}$/CdSe superlattice

    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  364–369
  43. Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping

    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  342–348
  44. Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites

    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  254–260
  45. MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:18 (2015),  82–88
  46. X-ray diffraction determination of the degree of ordering of a solid solution in epitaxial AlGaN layers

    Fizika Tverdogo Tela, 56:12 (2014),  2308–2310
  47. Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with $n$-type modulation doping

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1632–1639
  48. Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  352–357
  49. Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  36–43
  50. Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  32–35
  51. The structural state of epitaxial ZnO layers assessed by measuring the integral intensity of three- and two-beam X-ray diffraction

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:20 (2014),  22–28
  52. Generation of coherent terahertz radiation by polarized electron-hole pairs in GaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1441–1445
  53. Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide

    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  710–716
  54. Determination of the thickness and spectral dependence of the refractive index of Al$_x$In$_{1-x}$Sb epitaxial layers from reflectance spectra

    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  258–263
  55. Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow–green spectral region

    Kvantovaya Elektronika, 43:5 (2013),  418–422
  56. Field injection of low-energy electrons into the ZnSe/CdSe/ZnSe heterostructure with the use of an ultra-high-vacuum tunneling microscope

    Fizika Tverdogo Tela, 54:6 (2012),  1057–1061
  57. Quantum-confined stark effect and localization of charge carriers in Al$_{0.3}$Ga$_{0.7}$N/Al$_{0.4}$Ga$_{0.6}$N quantum wells with different morphologies

    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1022–1026
  58. RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  96–102
  59. Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  88–95
  60. Optical Properties of Epitaxial Al$_x$In$_{1-x}$Sb Alloy Layers

    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1481–1485
  61. Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1379–1385
  62. Excitonic spectrum of the ZnO/ZnMgO quantum wells

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  783–787
  63. The ratio of the hole and electron exchange integrals in a CdMnSe/ZnSe diluted magnetic structure with quantum dots

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  220–225
  64. Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  213–219
  65. Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1098–1103
  66. Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors

    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  699–705
  67. Microstructure and strain of ZnO molecular-beam epitaxial layers on sapphire

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  265–269
  68. Spin injection in GaAs/GaSb quantum-well heterostructures

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  205–209
  69. Plasmon effects in In(Ga)N nanostructures

    UFN, 179:9 (2009),  1007–1012
  70. Magnetooptics of (Zn,Cd,Mn)Te/ZnTe heterostructures with a small discontinuity in the valence band potential

    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008),  922–926
  71. Evidence for Mn$^{2+}$ fine structure in CdMnSe/ZnSe quantum dots caused by their low dimensionality

    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:9 (2008),  724–728
  72. Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers

    Kvantovaya Elektronika, 38:12 (2008),  1097–1100
  73. Effect of the spin-orbit interaction on the cyclotron resonance of two-dimensional electrons

    Pis'ma v Zh. Èksper. Teoret. Fiz., 79:11 (2004),  674–679
  74. Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers

    Kvantovaya Elektronika, 34:10 (2004),  909–911
  75. Observation of a light-induced nonohmic current in a toroidal-moment-possessive nanostructure

    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:7 (2002),  547–549
  76. Cyclotron resonance in the InAs/GaSb heterostructure in an inclined magnetic field

    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:4 (2002),  258–262
  77. Far infrared electroluminescence in cascade type-II heterostructures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 75:8 (2002),  463–466
  78. Blue-green lasers based on short-period superlattices in II—VI compounds

    UFN, 169:4 (1999),  468–471
  79. Simulation of the output characteristics and propagation of radiation from a CO laser with a selection cell

    Kvantovaya Elektronika, 23:6 (1996),  521–526
  80. Ordered quantum-dot arrays in semiconducting matrices

    UFN, 166:4 (1996),  423–428
  81. Infrared and microwave spectroscopy of ozone: historical aspects

    UFN, 164:7 (1994),  725–742
  82. Growth of GaAs-AlAs quantum clusters on faceted GaAs surface oriented not aling to (100) by the method of molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1715–1722
  83. Получение методом молекулярно-пучковой эпитаксии гетероструктур GaSb/InAs/GaSb с высокой подвижностью двумерных электронов

    Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  717–719
  84. Электрические и оптические эффекты при резонансном туннелировании в (Al, Ga)As$-$GaAs-гетероструктурах с двойным барьером

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  361–363
  85. (In, Ga, Al)As ДГС РО лазеры на длину волны 1.1 мкм с (In, Ga)As напряженной квантовой ямой, ограниченной короткопериодной сверхрешеткой

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  359–361
  86. (Al, Ga)As ДГС РО лазеры на длины волн 0.8 мкм (175 А/см$^{2}$) и 0.73 мкм (350 A/см$^{2}$) с легированной квантовой ямой

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  201–203
  87. Растекание и поверхностная рекомбинация неравновесных носителей в квантово-размерных (Al, Ga)As ДГС РО лазерах с широким полоском

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  152–158
  88. Энергетическая релаксация и транспорт электронов и дырок в короткопериодичных полупроводниковых сверхрешетках

    Fizika i Tekhnika Poluprovodnikov, 23:9 (1989),  1564–1567
  89. INCREASING OF MOBILITY OF TWO-DIMENSIONAL ELECTRONS ON ALAS/GAAS HETEROBOUNDARY AS COMPARED TO ALGAAS/GAAS IN HETEROSTRUCTURES WITH SELECTIVE DELTA-ALLOYING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:8 (1989),  68–71
  90. Отражение в экситонной области спектра структуры с одиночной квантовой ямой. Наклонное и нормальное падение света

    Fizika i Tekhnika Poluprovodnikov, 22:5 (1988),  784–788
  91. REDUCTION OF THRESHOLD CURRENT-DENSITY IN GAAS-ALGAAS DHS QUANTUM-DIMENSIONAL LASERS(JN=52ACM-2,T=300-K) UNDER THE LIMITATION OF A QUANTUM HOLE BY THE SHORT-PERIOD SUPERLATTICE WITH VARIABLE-PITCH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1803–1807
  92. Lasers based on heterostructures with active areas limited by multilayered lattices

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  562–565
  93. EFFECT OF GROWTH-CONDITIONS ON THE HUM ADDITIONS IN GAAS ALLOYED LAYERS GROWN BY MBE METHODS

    Zhurnal Tekhnicheskoi Fiziki, 55:1 (1985),  142–147
  94. Galvanomagnetic Effects in $N$-Al$_{0.3}$Ga$_{0.7}$As/GaAs Heterostructures under high Level Doped

    Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1199–1203
  95. Intrinsic and Impurity Luminescence in GaAs$-$AlGaAs Structures with Quantum Wells

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  715–721
  96. Effect of Growth Conditions on the Implantation of Background Impurities into Undoped GaAs Epitaxial Layers Grown by the Method of Molecular-Beam Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  270–274

  97. Памяти Виктора Михайловича Устинова

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:19 (2024),  3–4
  98. In memory of Robert Arnol'dovich Suris

    UFN, 194:6 (2024),  677–678
  99. In memory of Vadim L'vovich Gurevich

    UFN, 192:2 (2022),  229–230
  100. Nikolay Nikolaevich Rosanov (on his 80th birthday)

    UFN, 191:4 (2021),  445–446
  101. Aleksandr Aleksandrovich Kaplyanskii (on his 90th birthday)

    UFN, 190:12 (2020),  1343–1344
  102. In memory of Vadim Vasil'evich Afrosimov

    UFN, 189:8 (2019),  901–902
  103. In memory of Zhores Ivanovich Alferov

    UFN, 189:8 (2019),  899–900
  104. Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on $c$-sapphire substrates

    Fizika Tverdogo Tela, 55:10 (2013),  2058–2066
  105. Erratum: Simulation of the output characteristics and propagation of radiation from a CO laser with a selection cell [Quantum Electronics 26 (6) 506–511 (1996)]

    Kvantovaya Elektronika, 23:11 (1996),  1056

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