Cherkashin Nikolai Anatol'evich

Publications in Math-Net.Ru

1. Heterostructures with two-dimensional electron gas based on GaN with InAlN/AlGaN barrier
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  582–585
2. Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  15–18
3. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
4. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
   
   Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1263–1269
5. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
   
   Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  245–249
6. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
   
   Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1563–1568
7. Dependence of the efficiency of III–N blue LEDs on the structural perfection of GaN epitaxial buffer layers
   
   Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  55–60
8. InGaN/GaN heterostructures grown by submonolayer deposition
   
   Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1357–1362
9. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
   
   Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1304–1308
10. Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO$_2$
    
    Fizika Tverdogo Tela, 53:3 (2011),  508–517
11. Formation of composite InGaN/GaN/InAlN quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1382–1386
12. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  955–961
13. Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  857–863
14. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  126–129
15. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  96–100
16. Ferromagnetism and two magnetic phases in rutile (TiO$_2$) implanted by cobalt ions
    
    Kazan. Gos. Univ. Uchen. Zap. Ser. Fiz.-Mat. Nauki, 149:3 (2007),  31–41