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Publications in Math-Net.Ru
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Temperature dependence of the lattice parameters of Cu$_{2-x}$Se (0.03 $\le x\le$ 0.23) powders fabricated by mechanochemical synthesis
Fizika Tverdogo Tela, 60:11 (2018), 2255–2259
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Structure of the Ņu$_{2}$Se compound produced by different methods
Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 904–907
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Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016), 66–71
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Formation conditions for InAs/GaAs quantum dot arrays by droplet epitaxy under MOVPE conditions
Zhurnal Tekhnicheskoi Fiziki, 84:1 (2014), 79–85
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Physicochemical aspects of quantum dot array formation in the InAs/GaAs system by droplet epitaxy under MOVPE conditions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:15 (2010), 82–88
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On the possibility of growth quantum dot arrays in InAs/GaAs system by droplet epitaxy under MOVPE conditions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:1 (2010), 10–16
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Mathematical model for simulation of indium segregation and mismatch stress in InGaAs/GaAs multiple QWs heterostructures
Mat. Model., 21:5 (2009), 114–126
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Theoretical calculation of the Debye temperature and temperature dependence of heat capacity of aluminum, gallium and indium nitrides
TVT, 36:5 (1998), 839–842
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Electric and photoluminescent properties of $\text{GaSb}\langle\text{Bi}\rangle$ and $\text{GaSb}\langle\text{Bi,Sn}\rangle$ epitaxial layers produced from bismuth solutions
Fizika i Tekhnika Poluprovodnikov, 26:8 (1992), 1409–1414
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Photoluminescence of Bismuth-Doped InP
Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1258–1261
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