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Tarasov Il'ya Sergeevich

Publications in Math-Net.Ru

  1. Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  196–200
  2. Polarization effects in quantum-well In$_{28}$Ga$_{72}$As/GaAs heterolasers

    Fizika Tverdogo Tela, 59:9 (2017),  1684–1690
  3. Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers

    Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  998–1003
  4. Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types

    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  124–132
  5. All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  31–37
  6. Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1414–1419
  7. Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1320–1324
  8. Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1283–1294
  9. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1247–1252
  10. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  869–876
  11. Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  834–838
  12. Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  679–682
  13. Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure

    Kvantovaya Elektronika, 46:9 (2016),  777–781
  14. Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-$\mu$m under current pumping

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1574–1577
  15. Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1553–1557
  16. Properties of AlN films deposited by reactive ion-plasma sputtering

    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1429–1433
  17. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1108–1114
  18. Al$_x$Ga$_{1-x}$As/GaAs(100) hetermostructures with anomalously high carrier mobility

    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1043–1049
  19. Investigations of nanodimensional Al$_2$O$_3$ films deposited by ion-plasma sputtering onto porous silicon

    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  936–941
  20. Mapping of laser diode radiation intensity by atomic-force microscopy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:18 (2015),  8–15
  21. Suppressing the process of charge carrier delocalization in high-power pulse-pumped semiconductor lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  10–16
  22. Integrated high-order surface diffraction gratings for diode lasers

    Kvantovaya Elektronika, 45:12 (2015),  1091–1097
  23. Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)

    Kvantovaya Elektronika, 45:10 (2015),  879–883
  24. Study of the absorption coefficient in layers of a semiconductor laser heterostructure

    Kvantovaya Elektronika, 45:7 (2015),  604–606
  25. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers

    Kvantovaya Elektronika, 45:7 (2015),  597–600
  26. Structure and optical properties of thin Al$_2$O$_3$ films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates

    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1564–1569
  27. On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1377–1382
  28. Structural and optical properties of heavily doped Al$_x$Ga$_{1-x}$As$_{1-y}$P$_y$:Mg alloys produced by metal-organic chemical vapor deposition

    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1123–1131
  29. On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  716–718
  30. Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  710–715
  31. Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  705–709
  32. Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  388–391
  33. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

    Kvantovaya Elektronika, 44:11 (2014),  993–996
  34. Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

    Kvantovaya Elektronika, 44:10 (2014),  907–911
  35. Calculation of output characteristics of semiconductor quantum-well lasers with account for both electrons and holes

    Kvantovaya Elektronika, 44:9 (2014),  801–805
  36. AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1082–1086
  37. 850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1078–1081
  38. Semiconductor lasers with internal wavelength selection

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  124–128
  39. Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:8 (2013),  9–16
  40. Threshold characteristics of semiconductor lasers under conditions of violation of electroneutrality in quantum wells

    Kvantovaya Elektronika, 43:5 (2013),  428–432
  41. 850-nm diode lasers based on AlGaAsP/GaAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1344–1348
  42. Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1339–1343
  43. Temperature dependence of the threshold current density in semiconductor lasers ($\lambda$ = 1050–1070 nm)

    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1234–1238
  44. Thermal delocalization of carriers in semiconductor lasers ($\lambda$ = 1010–1070 nm)

    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1230–1233
  45. Effect of the number of quantum wells in the active region on the linearity of the light-current characteristic of a semiconductor laser

    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1067–1073
  46. Structural and spectral features of MOCVD Al$_x$Ga$_y$In$_{1-x-y}$As$_z$P$_{1-z}$/GaAs (100) alloys

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  739–750
  47. Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density

    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  348–355
  48. High-order diffraction gratings for high-power semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  252–257
  49. Capture of charge carriers and output power of a quantum well laser

    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1553–1559
  50. Spinodal decomposition of Ga$_x$In$_{1-x}$As$_y$P$_{1-y}$ quaternary alloys

    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1489–1497
  51. Analysis of quenching conditions of Fabry–Perot mode lasing in semiconductor stripe-contact lasers

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1431–1438
  52. Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1417–1421
  53. Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1274–1278
  54. Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  682–687
  55. Analysis of threshold conditions for generation of a closed mode in a Fabry–Perot semiconductor laser

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  672–676
  56. Laser diodes with several emitting regions ($\lambda$ = 800–1100 nm) on the basis of epitaxially integrated heterostructures

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  528–534
  57. Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride Al$_x$Ga$_{1-x}$As (100) heterostructures

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  488–499
  58. InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate

    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1640–1644
  59. Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers ($\lambda$ = 900–920 nm)

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1417–1421
  60. The temperature dependence of internal optical losses in semiconductor lasers ($\lambda$ = 900–920 nm)

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1411–1416
  61. Relaxation of crystal lattice parameters and structural ordering in In$_x$Ga$_{1-x}$As epitaxial alloys

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1140–1146
  62. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  833–836
  63. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  817–821
  64. Temperature delocalization of charge carriers in semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  688–693
  65. Dissipation loss of mid-infrared radiation in a dielectric waveguide

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  256–259
  66. A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  251–255
  67. Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  246–250
  68. The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  194–199
  69. Features of mode locking in laser with quantum well in broad waveguide layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  29–36
  70. Giant reversible deformations in a shape-memory composite material

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:7 (2010),  75–81
  71. Study of non-diffracting light beams from broad-stripe edge-emitting semiconductor lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:1 (2010),  22–30
  72. High-power semiconductor separate-confinement double heterostructure lasers

    Kvantovaya Elektronika, 40:8 (2010),  661–681
  73. Heterolaser frequency tuning under the action of ultrasonic waves

    Pis'ma v Zh. Èksper. Teoret. Fiz., 78:2 (2003),  77–81
  74. SEMICONDUCTING SOURCE OF PICOSECOND PULSES ON 1.55-MU-M WAVE-LENGTH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:24 (1992),  23–27
  75. Совершенствование процесса заращивания и получение одномодовых зарощенных InGaAsP/InP-лазеров ($\lambda=1.3$ мкм) с мощностью излучения 160 мВт

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1414–1418
  76. Экспериментальное и теоретическое исследование особенностей пороговых и мощностных характеристик РО ДГС InGaAsP/InP-лазеров (${\lambda=1.3}$ мкм)

    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  928–933
  77. GROWN SINGLE-MODE CONTINUOUS INGAASP/INP SEPARATE CONFINEMENT LASERS WITH (LAMBDA = 1.3 MU-M)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991),  17–21
  78. SOURCE OF PICOSECOND PULSES BASED ON SEMICONDUCTING LASER WITH FIBER RESONATOR

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:3 (1991),  14–17
  79. Direct amplitude modulation of the radiation emitted by (InGa)AsP/InP double-heterostructure lasers (λ = 1.3 μm) with separate confinement

    Kvantovaya Elektronika, 18:3 (1991),  281–286
  80. OPTICAL MODULE BASED ON QUANTUM-DIMENTIONAL INGAASP-INP LASER OF (LAMBDA=1.3 MU-M) WATT RANGE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:21 (1990),  35–41
  81. DEPENDENCE OF THRESHOLD CURRENT-DENSITY AND DIFFERENTIAL QUANTUM EFFICIENCY OF SEPARATE CONFINEMENT DHS INGAASP/INP (LAMBDA=1,3MU-M) LASERS ON OUTLET LOSSES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:9 (1990),  50–54
  82. Distribution and spatial coherence of radiation fields of InGaAsP/lnP double-heterostructure separate-confinement lasers emitting at λ = 1.3 μm

    Kvantovaya Elektronika, 17:1 (1990),  14–16
  83. OPTICAL REVERSIVE REGISTRATION OF INFORMATION ON VO2 FILMS

    Zhurnal Tekhnicheskoi Fiziki, 59:10 (1989),  174–177
  84. FORMATION OF HIGH-FREQUENCY TRAIN OF PICOSECOND OPTICAL PULSES AT 1.32-MU-M WAVE-LENGTH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:24 (1989),  64–68
  85. SOURCE OF PICOSECOND PULSES FOR HIGH-SPEED SOLITON SYSTEM OF INFORMATION-TRANSFER

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:9 (1989),  25–29
  86. BISTABLE REGIME OF GENERATION OF QUANTUM-DIMENSIONAL INGAASP/INP-LASERS WITH EXTERNAL DISPERSION RESONATOR

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:23 (1988),  2128–2132
  87. CURRENT RETUNING CHARACTERISTICS OF INGAASP/INP HETEROLASERS WITH AN EXTERNAL DISPERSION RESONATOR

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:23 (1988),  2116–2120
  88. MS INGAASP/INP (LAMBDA=1.3-MU-M) QUANTUM DIMENSIONAL SEPARATE CONFINEMENT LASERS (JPOR=380A/CM2,P=0.5 BT, T=18-DEGREES-C)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  241–246
  89. OVERGROWN CONTINUOUS INGAASP-INP (LAMBDA=1,3-MU-M) SEPARATE CONFINEMENT LASERS (J=360A-CM2,P=360-MVT,T=18-DEGREES-C)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  99–104
  90. STUDY OF THE DURABILITY OF CONTINUOUS INGAASP/INP (LAMBDA=1.3 MU-M) MS SEPARATE CONFINEMENT LASERS

    Zhurnal Tekhnicheskoi Fiziki, 57:9 (1987),  1822–1824
  91. Quantum-Dimensional InGaAsP/InP Double-Heterostructure Lasers of Separate Limitation with ${\lambda=1.3}$ $\mu m$ (${J_{\text{п}}=410\,\text{А/cm}^{2}}$, ${T=23^{\circ}}$С)

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  824–829
  92. Continuous $In\,Ga\,As\,P/In\,P$ ($\lambda=1.3$ mu-m) separate confinement lasers of 270 mVt ($T=20^{\circ}$ C, $I=900$ mA, exterior dielectric mirror)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  552–557
  93. Power separate confinement $In\,Ga\,As\,P/In\,P$-based lasers for FOCD ($\lambda=1,55$ mu-m, $T=300$ K, $P=50$ mVt)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  535–537
  94. Continuous intrastrip $In\,Ga\,As\,P/In\,P$ SL DH-lasers with $\lambda=1.3$-mu-m – reduction of thresholds and the capacity increase

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986),  660–663
  95. Low-threshold in $In\,Ga\,As\,P/In\,P$ lasers of divided limitation with $\lambda=1.3$-mu-m and $\lambda =1.55$-mu-m ($I_{\text{threshold}}=600-700\,\text{A/cm}^{2}$)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  210–215
  96. MESA-STRIPE INGAASP/INP(LAMBDA=1.5MKM) LASERS OF CONTINUOUS ACTION

    Zhurnal Tekhnicheskoi Fiziki, 55:9 (1985),  1872–1876
  97. Special Features of Temperature Dependence of Thresholds in InGaAsP/InP DH Lasers (${\lambda=1.3}\, \mu m$) with Separate Limitation and Thin Active Region

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1496–1498
  98. Special Features of Threshold Characteristics of InGaAsP/InP DH Lasers (${\lambda=1.3}\,\mu m$) with Separate Limitation and Superthin Active Regions

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1420–1423
  99. Injection Continuous 60 mVt Laser Based on Liquid-Phase InGaAsP Double-Heterostructure of Separate Limitation (${\lambda=1.35}\,\mu m$, ${T=300}$ K)

    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  456–459
  100. High-power mesastrip PO $In\,Ga\,As/In\,P$ lasers for FOCD ($\lambda=1.3$ mu-m, $t=18^\circ$ C, $i=300$ mA, $p=28$ mVt in the fiber of $50\,\mu m$ diameter

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:22 (1985),  1345–1349
  101. Continuous $In\,Ga\,As\,P/In\,P$ RO DGS laser with $17\%$ ($\lambda=1.32\,\mu m$, $t=290$ K) efficiency

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1157–1162
  102. A generalization of an interpolation algebraic polynomial to the case of several variables

    Izv. Vyssh. Uchebn. Zaved. Mat., 1984, no. 2,  54–55
  103. INFLUENCE OF TECHNOLOGICAL FACTORS ON LUMINESCENT CHARACTERISTICS OF INGAASP/INP(LAMBDA=1.55MKM) HETEROLASERS

    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  2047–2050
  104. Обратные токи в $p{-}n$-гетероструктурах InGaAsP/InP

    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2036–2040
  105. Влияние несоответствия параметров решеток на $I{-}V$-характеристики InGaAsP/InP $p{-}n$-гетероструктур

    Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1413–1416
  106. Tunnel-Type Currents in InGaAsP/InP $p{-}n$ Heterostructures

    Fizika i Tekhnika Poluprovodnikov, 18:6 (1984),  1034–1038
  107. LOW-THRESHOLD MEZOBAND INGAASP/INP CONTINUOUS OPERATION LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:16 (1984),  961–964
  108. BAND LASERS BASED ON DHS (DOUBLE HETEROSTRUCTURE) IN THE INGAASP-INP SYSTEM, PRODUCED BY OXYGEN-ATOMS IMPLANTATION

    Zhurnal Tekhnicheskoi Fiziki, 53:10 (1983),  1973–1978
  109. LOW-THRESHOLD BAND THICK HETEROLASERS BASED ON INGAASP/INP(GAMMA-CONGRUENT-TO-1,3 MKM), OBTAINED BY HYBRID TECHNOLOGY

    Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983),  1413–1414
  110. Особенности поляризации люминесценции и константы деформационного потенциала в InP $n$- и $p$-типа проводимости

    Fizika i Tekhnika Poluprovodnikov, 17:6 (1983),  997–1002
  111. Multichannel duplex fiber-optic communication line operating at the wavelength of ~1.3 μ

    Kvantovaya Elektronika, 9:8 (1982),  1698–1700
  112. On the inversion of a Wronskian matrix

    Izv. Vyssh. Uchebn. Zaved. Mat., 1981, no. 8,  80–82
  113. Prototype fiber-optical communication line with spectral multiplexing in the 1.3μ region

    Kvantovaya Elektronika, 6:11 (1979),  2487–2490
  114. The inductive theory of non-commutative determinants

    Izv. Vyssh. Uchebn. Zaved. Mat., 1964, no. 4,  152–161
  115. The theory of non-singular hyperstrips in a centro-affine space

    Izv. Vyssh. Uchebn. Zaved. Mat., 1959, no. 4,  161–167

  116. Photoluminescence properties of heavily doped heterostructures based on (Al$_x$Ga$_{1-x}$As)$_{1-y}$Si$_y$ solid solutions

    Fizika Tverdogo Tela, 55:10 (2013),  2054–2057
  117. X-ray diffraction studies of heterostructures based on solid solutions Al$_x$Ga$_{1-x}$As$_y$P$_{1-y}$ : Si

    Fizika Tverdogo Tela, 55:10 (2013),  2046–2049

© Steklov Math. Inst. of RAS, 2026