Bolkhovityanov Yurii Borisovich

Publications in Math-Net.Ru

1. Forming dislocation pairs in the Ge/GeSi/Si(001) heterostructure
   
   Fizika Tverdogo Tela, 61:2 (2019),  284–287
2. Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness
   
   Fizika Tverdogo Tela, 57:4 (2015),  746–752
3. Specific features of plastic relaxation of a metastable Ge$_x$Si$_{1-x}$ layer buried between a silicon substrate and a relaxed germanium layer
   
   Fizika Tverdogo Tela, 56:2 (2014),  247–253
4. Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface
   
   Fizika Tverdogo Tela, 53:10 (2011),  1903–1909
5. Edge misfit dislocations in Ge$_x$Si$_{1-x}$/Si(001) ($x\sim$ 1) heterostructures: role of buffer Ge$_y$Si$_{1-y}$ $(y<x)$ interlayer in their formation
   
   Fizika Tverdogo Tela, 53:9 (2011),  1699–1705
6. Heteroepitaxy of Ge$_x$Si$_{1-x}$ ($x\sim$ 0.4–0.5) films on Si(001) substrates misoriented to (111): Formation of short edge misfit dislocations alone in the misorientation direction
   
   Fizika Tverdogo Tela, 52:1 (2010),  32–36
7. GaAs epitaxy on Si substrates: modern status of research and engineering
   
   UFN, 178:5 (2008),  459–480
8. Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures
   
   UFN, 171:7 (2001),  689–715
9. HIGHLY PURE P-GAAS GROWN FROM GAAS SOLUTION TO BI ALLOYED BY YTTERBIUM
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:9 (1990),  37–40
10. SEMICLEAR ARSENIDE-GALLIUM PHOTOCATHODE ON THE GLASS WITH PHOTOSENSITIVITY UP TO 1700-MCA/LM
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:7 (1990),  25–29
11. CHARACTERISTICS OF THE FORMATION OF A SOLID-PHASE UNDER A CONTACT CHANGING OF SOLUTIONS - GROWTH OF GAAS ON ALGAAS SURFACE
    
    Zhurnal Tekhnicheskoi Fiziki, 59:8 (1989),  57–63
12. TRANSITION LAYERS IN ALGAAS/GAAS HETEROSTRUCTURES, GROWN BY THE CONTACT SOLUTION RENEWING - THEORY AND EXPERIMENT
    
    Zhurnal Tekhnicheskoi Fiziki, 59:3 (1989),  178–185
13. NATURE OF ALGAAS SEPARATING LAYER ON THE GAAS SURFACE DURING ITS ISOTHERMAL CONTACTS WITH THE AL-GA-AS LIQUID-PHASE
    
    Zhurnal Tekhnicheskoi Fiziki, 56:3 (1986),  601–603
14. Deep Level Induced into GaAs by Doping with Sb Isovalent Impurity
    
    Fizika i Tekhnika Poluprovodnikov, 20:8 (1986),  1392–1395