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Timoshenko Viktor Yur'evich

Publications in Math-Net.Ru

  1. Enhancement of local electric fields of optical radiation in ensembles of silicon nanowires with gold nanoparticles

    Kvantovaya Elektronika, 55:2 (2025),  86–93
  2. Peculiarities of photoinduced heating of perovskite nanocrystals with effective anti-Stokes photoluminescence under near-resonant laser excitation

    Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  584–589
  3. Study of laser-stimulated heating of aqueous suspensions of titanium nitride nanoparticles for biomedical applications

    Kvantovaya Elektronika, 53:11 (2023),  877–882
  4. Monitoring the temperature of silicon nanoparticles in liquid by Raman scattering method with nanosecond pulsed laser excitation

    Kvantovaya Elektronika, 53:6 (2023),  515–518
  5. Optical properties and photo-heating of aqueous suspensions of silicon-based nanocomposite particles with deposited gold

    Optics and Spectroscopy, 130:4 (2022),  569–573
  6. Effect of nanocrystal size on anti-stokes photoluminescence in lead halide perovskites

    Pis'ma v Zh. Èksper. Teoret. Fiz., 114:8 (2021),  515–519
  7. X-ray production and charged-particle acceleration in the irradiation of micro- and nanorod arrays by high-power femtosecond laser pulses

    Kvantovaya Elektronika, 51:6 (2021),  536–543
  8. Heating of aqueous suspensions of silicon nanoparticles by a 808-nm diode laser for application in local photohyperthermia

    Kvantovaya Elektronika, 50:2 (2020),  104–108
  9. Acceleration of the decay of excitons in an organometallic perovskite film on the crystalline silicon surface

    Pis'ma v Zh. Èksper. Teoret. Fiz., 110:9 (2019),  591–594
  10. Determination of free charge carrier concentration in arrays of boron doped silicon nanowires using attenuated total reflection infrared spectroscopy

    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1557–1561
  11. A comparative analysis of the observed effects of 2d tunneling bifurcations for quasi-one-dimensional and quasi-two-dimensional au-qd systems in an external electric field

    Nanosystems: Physics, Chemistry, Mathematics, 9:6 (2018),  724–734
  12. Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers

    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1091–1095
  13. Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  421–425
  14. Peculiarities of the optical properties of organometallic perovskites with variable content of iodine and bromine

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:10 (2017),  67–72
  15. Investigation of halloysite nanotubes with deposited silver nanoparticles by methods of optical spectroscopy

    Fizika Tverdogo Tela, 58:3 (2016),  585–589
  16. Peculiarities of metal oxide nanoparticles obtained in acoustoplasma discharge

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016),  105–110
  17. Increase in the lifetime of a photon and in the efficiency of raman scattering and second-harmonic generation processes in porous silicon carbide

    Pis'ma v Zh. Èksper. Teoret. Fiz., 101:12 (2015),  891–896
  18. Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level

    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1050–1055
  19. Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1654–1659
  20. Luminescence properties of thin nanocrystalline silicon-carbide films fabricated by direct-beam ion deposition

    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  731–735
  21. Photoluminescence properties of cadmium-selenide quantum dots embedded in a liquid-crystal polymer matrix

    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  633–636
  22. Dependence of the efficiency of Raman scattering in silicon nanowire arrays on the excitation wavelength

    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  329–333
  23. Photoluminescence study of the structural evolution of amorphous and crystalline silicon nanoclusters during the thermal annealing of silicon suboxide films with different stoichiometry

    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  369–375
  24. Specific features of photoluminescence properties of copper-doped cadmium selenide quantum dots

    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1219–1222
  25. Photosensitized generation of singlet oxygen in powders and aqueous suspensions of silicon nanocrystals

    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1090–1094
  26. Enhancement of photoluminescence and Raman scattering in one-dimensional photonic crystals based on porous silicon

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  625–628
  27. Optical generation of free charge carriers in thin films of tin oxide

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  241–244
  28. Interaction of silicon nanoparticles with the molecules of bovine serum albumin in aqueous solutions

    Kvantovaya Elektronika, 41:5 (2011),  393–395
  29. Two-photon absorption and nonlinear refraction of birefringent mesoporous silicon films

    Kvantovaya Elektronika, 41:3 (2011),  257–261
  30. Study of spin centers in nanocrystalline titanium dioxide with a high degree of photocatalytic activity

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1093–1097
  31. Raman studies of silicon nanocrystals embedded in silicon suboxide layers

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1074–1077
  32. Specific features of erbium ion photoluminescence in structures with amorphous and crystalline silicon nanoclusters in silica matrix

    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  486–490
  33. Effect of thermal oxidation on charge carrier transport in nanostructured silicon

    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  367–371
  34. Detection of singlet oxygen in photoexcited porous silicon nanocrystals by photoluminescence measurements

    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  92–95
  35. EPR diagnostics of the photosensitized generation of singlet oxygen on the surface of silicon nanocrystals

    Pis'ma v Zh. Èksper. Teoret. Fiz., 85:1 (2007),  65–68
  36. Optical properties of porous-system-based nanocomposites

    UFN, 177:6 (2007),  619–638
  37. Silicon nanocrystals as photosensitizers of active oxygen for biomedical applications

    Pis'ma v Zh. Èksper. Teoret. Fiz., 83:9 (2006),  492–495
  38. Femtosecond nanostructuring of silicon surfaces

    Pis'ma v Zh. Èksper. Teoret. Fiz., 83:2 (2006),  76–79
  39. Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005),  614–617
  40. Third harmonic generation from a silicon surface structured by femtosecond laser pulses

    Kvantovaya Elektronika, 35:10 (2005),  943–946
  41. Efficient second-harmonic generation by scattering from porous gallium phosphide

    Pis'ma v Zh. Èksper. Teoret. Fiz., 78:4 (2003),  229–233
  42. Generation of hard x-ray radiation by irradiation of porous silicon with ultraintense femtosecond laser pulses

    Kvantovaya Elektronika, 25:1 (1998),  3–4
  43. Dynamics of nonequilibrium charge carriers in silicon quantum wires

    UFN, 168:5 (1998),  577–582
  44. Modification of A$^{\text{III}}$B$^{\text{V}}$ semiconductor reflection coefficient under pulsed laser irradiation

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1835–1837
  45. Modification of the spectrum of gallium-arsenide shallow states under pulsed laser radiation

    Fizika i Tekhnika Poluprovodnikov, 26:7 (1992),  1321–1322

  46. Квантовые и волновые явления в наномире

    Kvant, 2010, no. 3,  17–22
  47. Генерация жесткого рентгеновского излучения при облучении пористого кремния сверхинтенсивными фемтосекундными лазерными импульсами («Квантовая электроника», 1998, т. 25, № 1, с.3–4 ).

    Kvantovaya Elektronika, 25:2 (1998),  192


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