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PEOPLE

Alferov Zhores Ivanovich

Publications in Math-Net.Ru

  1. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme

    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  540–546
  2. Terahertz radiation generation in multilayer quantum-cascade heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017),  86–94
  3. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1395–1400
  4. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  674–678
  5. Simulation of characteristics of double-junction solar cells based on ZnSiP$_2$ heterostructures on silicon substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015),  15–23
  6. The semiconductor revolution of the 20th century

    Usp. Khim., 82:7 (2013),  587–596
  7. Двойные гетероструктуры: концепция и применения в физике, электронике и технологии

    UFN, 172:9 (2002),  1068–1086
  8. Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

    UFN, 171:8 (2001),  857–858
  9. Vertical-cavity emitting devices with quantum-dot structures

    UFN, 171:8 (2001),  855–857
  10. The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

    UFN, 169:4 (1999),  459–464
  11. Ordered quantum-dot arrays in semiconducting matrices

    UFN, 166:4 (1996),  423–428
  12. Strained-submonolayer and quantum-dot superstructures

    UFN, 165:2 (1995),  224–225
  13. Vitalii Iosifovich Gol'danskii (on his seventieth birthday)

    UFN, 163:8 (1993),  117–118
  14. Growth of GaAs-AlAs quantum clusters on faceted GaAs surface oriented not aling to (100) by the method of molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1715–1722
  15. (Al, Ga)As ДГС РО лазеры на длины волн 0.8 мкм (175 А/см$^{2}$) и 0.73 мкм (350 A/см$^{2}$) с легированной квантовой ямой

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  201–203
  16. Растекание и поверхностная рекомбинация неравновесных носителей в квантово-размерных (Al, Ga)As ДГС РО лазерах с широким полоском

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  152–158
  17. Квантово-размерные AlGaAs/GaAs-гетероструктуры со 100%-м квантовым выходом излучательной рекомбинации, полученные методом молекулярно-пучковой эпитаксии

    Fizika i Tekhnika Poluprovodnikov, 22:12 (1988),  2105–2110
  18. Квантово-размерные низкопороговые AlGaAs-гетеролазеры, полученные методом низкотемпературной жидкофазной эпитаксии

    Fizika i Tekhnika Poluprovodnikov, 22:10 (1988),  1775–1779
  19. MULTIDIMENSIONAL STRIP AL-GA-AS-HETEROLASERS OF A MILLIAMPERIC RANGE OF CURRENTS (IN=2.1-MA, T=300-K), OBTAINED BY METHODS OF LOW-TEMPERATURE LIQUID-PHASE EPITAXY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:22 (1988),  2057–2060
  20. LOW-THRESHOLD (IN=6.2-MA, T=300-K) BAND QUANTUM DIMENSIONAL ALGAAS-HETEROLASERS CREATED BY THE LOW-TEMPERATURE LPE METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1537–1540
  21. THIN-FILM MULTITRANSIT ALGAAS-PHOTOELEMENTS WITH 2-SIDED PHOTOSENSITIVITY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  193–197
  22. VILET PALGAAS-PGAAS-NGAAS-PHOTOELEMENTS WITH SUPERTHIN (30-300 A) WIDE-ZONE LAYERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:1 (1988),  76–79
  23. Pbotoluminescent Studies of Carrier Trapping into the Quantum Well of InGaAsP/InP Double Heterostructure

    Fizika i Tekhnika Poluprovodnikov, 21:11 (1987),  1983–1988
  24. Quantum-Dimensional InGaAsP/InP Double-Heterostructure Lasers of Separate Limitation with ${\lambda=1.3}$ $\mu m$ (${J_{\text{п}}=410\,\text{А/cm}^{2}}$, ${T=23^{\circ}}$С)

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  824–829
  25. Formation of high-voltage differential pressure of picosecond range on arsenide-gallium diodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987),  1089–1093
  26. Continuous $In\,Ga\,As\,P/In\,P$ ($\lambda=1.3$ mu-m) separate confinement lasers of 270 mVt ($T=20^{\circ}$ C, $I=900$ mA, exterior dielectric mirror)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  552–557
  27. Heterolasers with distributed feedback ($\lambda=1.55$ mu-m), operating in continuous regime at room-temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  513–517
  28. Visible $In\,Ga\,As\,P/Ga\,As\,P$ separate confinement lasers, manufactured by the liquid epitaxy-method ($\lambda=0.65\div0.67$ mu-m, $I_n=3\div0.8\,\text{kA}/\text{cm}^{2}$; $P=5$ mVt, $\lambda=0.665$ mu-m, $T=300$ K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987),  372–374
  29. Low-Threshold (${j_{\text{п}}=230\,\text{А/см}^{2}}$, ${T=300}$ K) AlGaAs Double-Heterostructure Lasers with Separate Limitation Produced by the Method of Liquid Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  381–383
  30. Electrically controlled trielectrode high-voltage switches of the subnanosecond range based on the $Ga\,As-Al\,Ga\,As$ multilayered heterostructure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986),  1281–1285
  31. Generation of picosecond pulses in hetero-lasers with a modulated durability

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1093–1098
  32. $Al\,Ga\,As$-heterostructures with quantum-dimensional layers, obtained by low-temperature liquid-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1089–1093
  33. Continuous single-mode injection $Ga\,Al\,As$ heterolasers, obtained by gasophase and liquid-phase epitaxial hybrid technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:10 (1986),  577–582
  34. Lasers based on heterostructures with active areas limited by multilayered lattices

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  562–565
  35. Formation of transition layers in heterostructures based on $Ga\,As-Al\,As$ solid-solutions during the liquid-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:6 (1986),  335–341
  36. Low-threshold in $In\,Ga\,As\,P/In\,P$ lasers of divided limitation with $\lambda=1.3$-mu-m and $\lambda =1.55$-mu-m ($I_{\text{threshold}}=600-700\,\text{A/cm}^{2}$)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  210–215
  37. Arsenide-gallium vertical field transistor with the hidden lock

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:3 (1986),  183–186
  38. Intrinsic and Impurity Luminescence in GaAs$-$AlGaAs Structures with Quantum Wells

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  715–721
  39. Separate-confinement $Al\,Ga\,As/Ga\,As$ heterolasers obtained by the modified method of liquid epitaxy ($I_{\text{p}}=260$ A/cm$^{2}$, $\lambda= 0.86-0.83\,\mu m$, $T= 300$ K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:23 (1985),  1409–1413
  40. High-power mesastrip PO $In\,Ga\,As/In\,P$ lasers for FOCD ($\lambda=1.3$ mu-m, $t=18^\circ$ C, $i=300$ mA, $p=28$ mVt in the fiber of $50\,\mu m$ diameter

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:22 (1985),  1345–1349
  41. Continuous $In\,Ga\,As\,P/In\,P$ RO DGS laser with $17\%$ ($\lambda=1.32\,\mu m$, $t=290$ K) efficiency

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1157–1162
  42. Continuous short-wave ($\lambda=0,677\,\mu m$) injection-laser based on $In\,Ga\,As\,P/Ga\,As\,P$ RO DGS with $10$ mVt power

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1153–1157
  43. Epitaxy $In\,Ga\,As\,P/In\,P$ from the migrating limited liquid-phase volume

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985),  961–968
  44. The effect of nanosecond laser-pulses on indium-phosphide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985),  916–920
  45. Band lasers based on PO $In\,Ga\,As\,P/Ga\,As$ DHS ($\lambda\simeq0.87\,\mu m$) with the thin active area

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  205–209
  46. Special Features of SHF-Noise in the Development of Electric Instability in Quasi-Two-Dimensional In$_{0.53}$Ga$_{0.47}$As/InP Heterostructures

    Fizika i Tekhnika Poluprovodnikov, 18:7 (1984),  1237–1241
  47. Two-Dimensional Elactron Gas in InGaAs/InP Heterostructures Produced by Liquid-Phase Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 18:7 (1984),  1230–1232
  48. Low-Threshold Visible GalnAsP/GaAsP DH Lasers (${T=300}$ K, ${\lambda=0.70{-}0.66}\,\mu m,$ ${I_{\text{thresh}}\simeq1.5{-}3.2\,\text{кА}/\text{cm}^{2}}$)

    Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  757–758
  49. Visible Low-Threshold Pulsed and Continuous InGaAsP/InGaP/GaAs DH Lasers in the $0.73{-}0.79 \mu m$ Region (${T=300}$ K, ${I_{n}=3.5{-}1.3\,\text{mA}/\text{cm}^{2}}$)

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  162–165
  50. Multichannel duplex fiber-optic communication line operating at the wavelength of ~1.3 μ

    Kvantovaya Elektronika, 9:8 (1982),  1698–1700
  51. Fiber-optical long-distance telecommunication line operating at the wavelength of 1.3 μ

    Kvantovaya Elektronika, 5:11 (1978),  2486–2488
  52. Model of a YAG:Nd3+ laser with a semiconductor converter in the pump system

    Kvantovaya Elektronika, 3:6 (1976),  1349–1352
  53. Semiconductor devices with heterojunctions

    UFN, 108:3 (1972),  598–600

  54. Radii Ivanovich Ilkaev (on his 80th birthday)

    UFN, 188:10 (2018),  1135–1136
  55. Yurii Moiseevich Kagan (on his 90th birthday)

    UFN, 188:7 (2018),  799–800
  56. On the Seventy-Fifth Birthday of Sergei Nikolaevich Bagayev

    Kvantovaya Elektronika, 46:10 (2016),  972
  57. Robert Arnoldovich Suris (on his 80th birthday)

    UFN, 186:12 (2016),  1381–1382
  58. Vladislav Borisovich Timofeev (on his 80th birthday)

    UFN, 186:9 (2016),  1027–1028
  59. Ibragimkhan Kamilovich Kamilov (on his 80th birthday)

    UFN, 186:1 (2016),  107–108
  60. In memory of Yurii Vasil'evich Kopaev

    UFN, 183:5 (2013),  557–558
  61. Игорь Георгиевич Неизвестный (к 80-летию со дня рождения)

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  286–287
  62. Sergei Nikolaevich Bagaev (on his 70th birthday)

    UFN, 181:10 (2011),  1123–1124
  63. Aleksandr Aleksandrovich Kaplyanskii (on his 80th birthday)

    UFN, 181:1 (2011),  115–116
  64. Aleksandr Fedorovich Andreev (on his 70th birthday)

    UFN, 180:1 (2010),  109–110
  65. In memory of Yurii Andreevich Osip'yan

    UFN, 178:11 (2008),  1239–1240
  66. In memory of Karl Karlovich Rebane

    UFN, 178:4 (2008),  443–444
  67. Yurii Vasil'evich Kopaev (on his 70th birthday)

    UFN, 177:11 (2007),  1251–1252
  68. In memory of Boris Aleksandrovich Mamyrin

    UFN, 177:6 (2007),  693–694
  69. Evgenii Mikhailovich Dianov

    Kvantovaya Elektronika, 36:1 (2006),  94
  70. Vladislav Borisovich Timofeev (on his seventieth birthday)

    UFN, 176:11 (2006),  1241–1242
  71. Evgenii Borisovich Aleksandrov (on his seventieth birthday)

    UFN, 176:11 (2006),  1237–1238
  72. In memory of Boris Petrovich Zakharchenya

    UFN, 176:8 (2006),  907–908
  73. Gennadii Andreevich Mesyats (on his seventieth birthday)

    UFN, 176:2 (2006),  231–232
  74. Vladimir Evgen'evich Fortov (on his sixtieth birthday)

    UFN, 176:1 (2006),  117–118
  75. Ibragimkhan Kamilovich Kamilov (on his seventieth birthday)

    UFN, 175:11 (2005),  1255–1256
  76. Yurii Vasil'evich Gulyaev (on his seventieth birthday)

    UFN, 175:10 (2005),  1141–1142
  77. In memory of Oleg Igorevich Sumbaev

    UFN, 173:9 (2003),  1023–1024
  78. In memory of Aleksandr Mikhailovich Prokhorov

    UFN, 172:7 (2002),  841–842
  79. In memory of Isaak Mikhailovich Tsidil'kovskii

    UFN, 172:7 (2002),  839–840
  80. Oleg Nikolaevich Krokhin (on his seventieth birthday)

    UFN, 172:6 (2002),  723–724
  81. Sergei Nikolaevich Bagaev (on his sixtieth birthday)

    UFN, 171:10 (2001),  1145–1146
  82. Yurii Andreevich Ossipyan (on his seventieth birthday)

    UFN, 171:2 (2001),  229–230
  83. Aleksandr Fedorovich Andreev (on his sixtieth birthday)

    UFN, 170:3 (2000),  345–346
  84. In memory of Viktor Yakovlevich Frenkel'

    UFN, 167:8 (1997),  893–894
  85. In memory of Gerogii Vyacheslavovich Kurdyumov

    UFN, 167:4 (1997),  463–464
  86. In memory of Mikhail Aleksandrovich El'yashevich

    UFN, 166:8 (1996),  911–912
  87. Aleksandr Mikhailovich Prokhorov (on his eightieth birthday)

    UFN, 166:7 (1996),  805–806
  88. Aleksei Mikhailovich Bonch-Bruevich (on his eightieth birthday)

    UFN, 166:6 (1996),  693–694
  89. Yurii Vasil'evich Gulyaev (on his sixtieth birthday)

    UFN, 165:9 (1995),  1099–1100
  90. Isaak Mikhailovich Tsidil'kovskii (on his seventieth birthday)

    UFN, 163:5 (1993),  131–132
  91. Джон Бардин. Памяти великого физика современности

    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  572–574
  92. Lev Emmanuilovich Gurevich (Obituary)

    UFN, 161:6 (1991),  207–209
  93. Yurii Andreevich Osip'yan (on his sixtieth birthday)

    UFN, 161:2 (1991),  195–197
  94. KAGAN,YURI,MOISEEVICH (TO THE 60TH ANNIVERSARY)

    Fizika Tverdogo Tela, 30:8 (1988),  2560–2561
  95. Vladimir Idelevich Perel' (on his sixtieth birthday)

    UFN, 156:3 (1988),  549–550
  96. Boris Petrovich Zakharchenya (on his sixtieth birthday)

    UFN, 155:1 (1988),  167–168
  97. Viktor Evgen'evich Golant (on his sixtieth birthday)

    UFN, 154:1 (1988),  169–170
  98. Aleksei Mikhaĭlovich Bonch-Bruevich (On his seventieth birthday)

    UFN, 150:4 (1986),  637–638
  99. Bentsion Moiseevich Vul (Obituary)

    UFN, 149:2 (1986),  349–350
  100. Solomon Isaakovich Pekar (Obituary)

    UFN, 149:1 (1986),  161–162
  101. Serafim Nikolaevich Zhurkov (on his eightieth birthday)

    UFN, 146:3 (1985),  547–548
  102. Vladimir Maksimovich Tuchkevich (on his eightieth birthday)

    UFN, 144:4 (1984),  687–688
  103. Solomon Meerovich Ryvkin (Obituary)

    UFN, 135:4 (1981),  719–720
  104. Gasan Mamed Bagir ogly Abdullaev (on his sixtieth birthday)

    UFN, 126:2 (1978),  349–351
  105. Vladimir Maksimovich Tuchkevich (on his seventieth birthday)

    UFN, 115:1 (1975),  149–152

© Steklov Math. Inst. of RAS, 2026