Shklyaev Aleksandr Andreevich

Publications in Math-Net.Ru

1. Structural changes in nanometer-thick silicon-on-insulator films during high-temperature annealing
   
   Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  320–327
2. Electron spin resonance in heterostructures with ring molecules of GeSi quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 113:1 (2021),  58–62
3. Double-channel electron transport in suspended quantum point contacts with in-plane side gates
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1344–1349
4. On-chip piezoelectric actuation of nanomechanical resonators containing a two-dimensional electron gas
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 109:4 (2019),  254–255
5. Formation and study of $p$–$i$–$n$ structures based on two-phase hydrogenated silicon with a germanium layer in the $i$-type region
   
   Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1420–1425
6. Nucleation and growth of ordered groups of SiGe quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  155–159
7. Stability of the (0001) surface of the Bi$^2$Se$^3$ topological insulator
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 94:6 (2011),  500–503
8. Effect of dislocations on the shape of islands during silicon growth on the oxidized Si(111) surface
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 94:6 (2011),  477–480
9. Formation of Ge clusters at a Si(111)-Bi-$\sqrt{3}\times\sqrt{3}$ surface
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 93:11 (2011),  740–745
10. 1.5–1.6 $\mu$m photoluminescence of silicon layers with a high density of lattice defects
    
    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  452–457
11. Extremely dense arrays of germanium and silicon nanostructures
    
    UFN, 178:2 (2008),  139–169
12. Fabrication of germanium and silicon nanostructures using a scanning tunneling microscope
    
    UFN, 176:9 (2006),  913–930